IXFT24N50 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXFT24N50

Type of IXFT24N50 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 298

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 26

Maximum junction temperature (Tj), °C:

Rise Time of IXFT24N50 transistor (tr), nS: 250ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.23

Package: TO268

Equivalent transistors for IXFT24N50

IXFT24N50 PDF documents for downloads:

1.1. ixfh24n50q_ixft24n50q_ixfh26n50q_ixft26n50q.pdf Size:145K _ixys

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 ? ? ? ? ? ? IXFH/IXFT 26N50Q 500 V 26 A 0.20 ? ? ? ? Q-Class ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 500 V VGS Continuous ±20 V (TAB) VGSM Transient ±30 V ID25 TC = 25°C 24N50Q 24 A 26N50Q 26 A IDM TC = 25°C, Note 1 24N50Q 96 A 26N50Q 104 A TO-268 (D3) (IXFT) Case Style IAR TC = 25°C 24N50Q 24 A 26N50Q 26 A EAR TC = 25°C 30 mJ G (TAB) EAS TC = 25°C 1.5 J S dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 5 V/ns TJ ? 150°C, RG = 2 ? G = Gate, D = Drain, PD TC = 25°C 300 W S = Source, TAB = Drain TJ -55 ... +150 ° C TJM 150 ° C Tstg -55 ... +150 ° C Features TL 1.6 mm (0.063 in) from case for 10 s 300 ° C IXYS advanced low Qg process Md Mounting torque 1.13/10 Nm/lb.in. International standard pack

1.2. ixfh21n50_ixfh24n50_ixfh26n50_ixfm21n50_ixfm24n50_ixfm26n50_ixft24n50_ixft26n50.pdf Size:158K _ixys

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM21N50 500 V 21 A 0.25 ? ? ? ? Power MOSFETs ? IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 ? ? ? ? ? IXFH/IXFT26N50 500 V 26 A 0.20 ? ? ? ? N-Channel Enhancement Mode ? High dv/dt, Low trr, HDMOSTM Family trr ? ? 250 ns ? ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 500 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V TO-268 (D3) Case Style ID25 TC = 25°C 21N50 21 A 24N50 24 A 26N50 26 A G IDM TC = 25°C, pulse width limited by TJM 21N50 84 A 24N50 96 A S (TAB) 26N50 104 A IAR TC = 25°C 21N50 21 A TO-204 AE (IXFM) 24N50 24 A 26N50 26 A EAR TC = 25°C30 mJ G dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS,5 V/ns D TJ ? 150°C, RG = 2 ? G = Gate, D = Drain, S = Source, TAB = Drain PD TC = 25°C 300 W TJ -55 ... +150 °C Features • International standard packages TJM 150 °C • Low RDS (on) HDMOSTM process Tstg -55 ... +150 °C • Rugg

3.1. ixft24n90p_ixfh24n90p.pdf Size:122K _ixys

Preliminary Technical Information VDSS = 900V IXFH24N90P PolarTM Power MOSFET ID25 = 24A IXFT24N90P HiPerFETTM ? ? RDS(on) ? 420m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 300ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1M? 900 V TAB VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C24 A TO-268 (IXFT) IDM TC = 25°C, pulse width limited by TJM 48 A IA TC = 25°C12 A G EAS TC = 25°C1 J S TAB dV/dt IS ? IDM, VDD ? VDSS, TJ ? 150°C 15 V/ns PD TC = 25°C 660 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features TL Maximum lead temperature for soldering 300 °C International standard packages Avalanche Rated TSOLD Plastic body for 10s 260 °C Low package inductance Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. Fast intrinsic diode Weight TO-247 6 g Advantage

3.2. ixfh24n80p_ixfk24n80p_ixft24n80p.pdf Size:158K _ixys

IXFH 24N80P VDSS = 800 V PolarHVTM HiPerFET IXFK 24N80P ID25 = 24 A Power MOSFET ? ? IXFT 24N80P RDS(on) ? ? ? 400 m? ? ? ? ? N-Channel Enhancement Mode ? ? trr ? 250 ns ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 800 V VGSS Continuous ±30 V G VGSM Transient ±40 V D S D (TAB) ID25 TC = 25°C24 A IDM TC = 25°C, pulse width limited by TJM 55 A TO-268 (IXFT) Case Style IAR TC = 25°C12 A EAR TC = 25°C50 mJ EAS TC = 25°C 1.5 J G dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns S D (TAB) TJ ? 150°C, RG = 2 ? PD TC = 25°C 650 W TO-264 AA (IXFK) TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque (TO-247 & TO-264) 1.13/10 Nm/lb.in. Weight TO-247 6 g G D (TAB) TO-268 5 g S TO-264 10 g G = Gate D = Drain TL 1.6 mm (0.062 in.) from case for 10 s 300 ° C S = Source Tab = Drain TSOLD Plastic body for 10 s 260

See also transistors datasheet: IXFT16N80P , IXFT16N90Q , IXFT18N90P , IXFT20N100P , IXFT20N80P , IXFT21N50 , IXFT21N50F , IXFT21N50Q , IRLR2905 , IXFT24N50Q , IXFT24N80P , IXFT24N90P , IXFT26N50 , IXFT26N60P , IXFT28N50F , IXFT30N40Q , IXFT30N50P .

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