IXFV12N100PS MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXFV12N100PS

Type of IXFV12N100PS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 463

Maximum drain-source voltage |Uds|, V: 1000V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 12

Maximum junction temperature (Tj), °C:

Rise Time of IXFV12N100PS transistor (tr), nS: 300ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.05

Package: PLUS220SMD

Equivalent transistors for IXFV12N100PS

IXFV12N100PS PDF documents for downloads:

3.1. ixfh12n90p_ixfv12n90p-s.pdf Size:179K _ixys

Preliminary Technical Information IXFH12N90P VDSS = 900V PolarTM Power MOSFET IXFV12N90P ID25 = 12A HiPerFETTM ? ? RDS(on) ? ? ? 900m? ? ? IXFV12N90PS ? ? ? trr ? ? 300ns ? ? N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25°C to 150°C 900 V D (TAB) VDGR TJ = 25°C to 150°C, RGS = 1M? 900 V PLUS220SMD (IXFV_S) VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C12 A IDM TC = 25°C, pulse width limited by TJM 24 A G S IA TC = 25°C6 A D (TAB) EAS TC = 25°C 500 mJ TO-247 (IXFH) dV/dt IS ? IDM, VDD ? VDSS, TJ ? 150°C 15 V/ns PD TC = 25°C 380 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C D (TAB) TL Maximum lead temperature for soldering 300 °C G = Gate D = Drain TSOLD Plastic body for 10s 260 °C S = Source TAB = Drain Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..14.6 N/lb. Features Weight TO-247 6 g I

5.1. ixfh18n60p_ixfv18n60p.pdf Size:172K _ixys

IXFH 18N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 18N60P ID25 = 18 A Power MOSFET ? ? IXFV 18N60PS RDS(on) ? 400 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 600 V VGS Continuous ±30 V VGSM Tranisent ±40 V D (TAB) ID25 TC = 25°C18 A IDM TC = 25°C, pulse width limited by TJM 45 A PLUS220 (IXFV) IAR TC = 25°C18 A EAR TC = 25°C30 mJ EAS TC = 25°C 1.0 J G dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns D (TAB) D S TJ ? 150°C, RG = 5 ? PD TC = 25°C 360 W TJ -55 ... +150 °C PLUS220SMD (IXFV...S) TJM 150 °C Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C G Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. S D (TAB) Weight TO-247 6 g PLUS220 & PLUS220SMD 4 g G = Gate D = Drain S = Source TAB = Drain Symbol Test Cond

5.2. ixfh110n10p_ixfv110n10p.pdf Size:309K _ixys

IXFH 110N10P VDSS = 100 V PolarHTTM HiPerFET IXFV 110N10P ID25 = 110 A Power MOSFET ? ? IXFV 110N10PS RDS(on) ? 15 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 150 ns ? ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 100 V VGSS Continuous ±20 V G VGSM Transient ±30 V D S (TAB) ID25 TC = 25° C 110 A ID(RMS) External lead current limit 75 A PLUS220 (IXFV) IDM TC = 25° C, pulse width limited by TJM 250 A IAR TC = 25° C60 A EAR TC = 25° C40 mJ EAS TC = 25° C 1.0 J G D D (TAB) S dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 4 ? PLUS220SMD (IXFV...S) PD TC = 25° C 480 W TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C G TSOLD Plastic body for 10 s 260 °C S D (TAB) Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. G = Gate D = Drain FC Mounting Force (PLUS2

See also transistors datasheet: IXFT96N20P , IXFV10N100P , IXFV10N100PS , IXFV110N10P , IXFV110N10PS , IXFV110N25T , IXFV110N25TS , IXFV12N100P , 3SK74 , IXFV12N120P , IXFV12N120PS , IXFV12N80P , IXFV12N80PS , IXFV12N90P , IXFV12N90PS , IXFV14N80P , IXFV14N80PS .

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