IXFX32N80Q3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXFX32N80Q3

Type of IXFX32N80Q3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1000

Maximum drain-source voltage |Uds|, V: 800V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 32

Maximum junction temperature (Tj), °C:

Rise Time of IXFX32N80Q3 transistor (tr), nS: 300ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.27

Package: PLUS247

Equivalent transistors for IXFX32N80Q3

IXFX32N80Q3 PDF documents for downloads:

1.1. ixfk32n80p_ixfx32n80p.pdf Size:161K _ixys

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET ? ? RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 800 V VGSS Continuous ±30 V VGSM Transient ±40 V G D ID25 TC = 25° C32 A S IDM TC = 25° C, pulse width limited by TJM 70 A (TAB) IAR TC = 25° C16 A EAR TC = 25° C50 mJ PLUS247 (IXFX) EAS TC = 25° C 2.0 J dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 4 ? PD TC = 25° C 830 W TJ -55 ... +150 °C TJM 150 °C (TAB) Tstg -55 ... +150 ° C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C G = Gate D = Drain TSOLD Plastic body for 10 s 260 ° C S = Source Tab = Drain Md Mounting torque (TO-264) 1.13/10 Nm/lb.in. Weight TO-264 10 g PLUS247 6 g Features l International standard packages Symbol Test Conditions Char

5.1. ixfk34n80_ixfx34n80.pdf Size:48K _ixys

HiPerFETTM IXFK 34N80 VDSS = 800 V IXFX 34N80 ID25 = 34 A Power MOSFETs RDS(on) = 0.24 W Single MOSFET Die trr ? 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V (TAB) G VGS Continuous ±20 V D VGSM Transient ±30 V ID25 TC = 25°C34 A TO-264 AA (IXFK) IDM TC = 25°C, pulse width limited by TJM 136 A IAR TC = 25°C36 A EAR TC = 25°C64 mJ G (TAB) EAS TC = 25°C3 J D S dv/dt IS ? IDM, di/dt ? 100 A/ms, VDD ? VDSS 5 V/ns TJ ? 150°C, RG = 2 W G = Gate D = Drain PD TC = 25°C 560 W S = Source TAB = Drain TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features TL 1.6 mm (0.063 in.) from case for 10 s 300 °C • International standard packages • Low RDS (on) HDMOSTM process Md Mounting torque TO-264 0.9/6 Nm/lb.in. • Rugged polysilicon gate cell structure Weight PLUS 247 6 g • Unclamped Inductive Switching (UIS) TO-264 10 g rated •

See also transistors datasheet: IXFX27N80Q , IXFX30N100Q2 , IXFX30N110P , IXFX320N17T2 , IXFX32N100P , IXFX32N100Q3 , IXFX32N50 , IXFX32N80P , 2N7001 , IXFX360N10T , IXFX360N15T2 , IXFX38N80Q2 , IXFX40N90P , IXFX420N10T , IXFX44N50F , IXFX44N50Q , IXFX44N80P .

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