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IXKP13N60C5M MOSFET (IC) Datasheet. Cross Reference Search. IXKP13N60C5M Equivalent

Type Designator: IXKP13N60C5M

Type of IXKP13N60C5M transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 32

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6.5

Maximum junction temperature (Tj), °C:

Rise Time of IXKP13N60C5M transistor (tr), nS: 300

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.3

Package: TO220

IXKP13N60C5M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXKP13N60C5M PDF doc:

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IXKP13N60C5M
IXKP13N60C5M

IXKP 13N60C5M ID25 = 6.5 A CoolMOS™ 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.3 ? Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET • fast CoolMOS™ 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25°C 600 V - High blocking capability ± V

See also transistors datasheet: IXKH70N60C5 , IXKK85N60C , IXKN40N60C , IXKN45N80C , IXKN75N60C , IXKP10N60C5 , IXKP10N60C5M , IXKP13N60C5 , IRF510 , IXKP20N60C5 , IXKP20N60C5M , IXKP24N60C5 , IXKP24N60C5M , IXKR25N80C , IXKR40N60C , IXKR47N60C5 , IXTA05N100 .

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