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IXTA70N075T2 MOSFET (IC) Datasheet. Cross Reference Search. IXTA70N075T2 Equivalent

Type Designator: IXTA70N075T2

Type of IXTA70N075T2 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 75

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 70

Maximum junction temperature (Tj), °C:

Rise Time of IXTA70N075T2 transistor (tr), nS: 48

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.012

Package: TO263

IXTA70N075T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXTA70N075T2 PDF doc:

2.1. ixta70n085t_ixtp70n085t.pdf Size:175K _ixys

IXTA70N075T2
IXTA70N075T2

Preliminary Technical Information IXTA70N085T VDSS = 85 V TrenchMVTM IXTP70N085T ID25 = 70 A Power MOSFET ? ? RDS(on) ? 13.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C85 V VDGR TJ = 25C to 175C; RGS = 1 M? 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25C70 A IDM TC = 25C, pulse wi

5.1. ixta7n60p_ixtp7n60p.pdf Size:182K _ixys

IXTA70N075T2
IXTA70N075T2

VDSS = 600 V IXTA 7N60P PolarHVTM ID25 = 7 A IXTP 7N60P Power MOSFET ? ? RDS(on) ? 1.1 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 600 V VGS Continuous 30 V (TAB) G VGSM Transient 40 V D S ID25 TC = 25 C7 A TO-263 (IXTA) IDM TC = 25 C,

5.2. ixta75n10p_ixtp75n10p_ixtq75n10p.pdf Size:252K _ixys

IXTA70N075T2
IXTA70N075T2

IXTA 75N10P VDSS = 100 V PolarHTTM IXTP 75N10P ID25 = 75 A Power MOSFET IXTQ 75N10P RDS(on) ? 25 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C 100 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V TO-220 (IXTP) VGSM Transient 30 V ID25 TC = 25 C75 A IDM

5.3. ixta76n075t_ixtp76n075t.pdf Size:177K _ixys

IXTA70N075T2
IXTA70N075T2

Preliminary Technical Information IXTA76N075T VDSS = 75 V TrenchMVTM IXTP76N075T ID25 = 76 A Power MOSFET ? ? RDS(on) ? 12 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25C76 A ILRMS Lead Current Limit,

See also transistors datasheet: IXTA5N50P , IXTA5N60P , IXTA60N10T , IXTA60N20T , IXTA62N15P , IXTA6N100D2 , IXTA6N50D2 , IXTA6N50P , IRFP260 , IXTA70N085T , IXTA75N10P , IXTA76N075T , IXTA76N25T , IXTA76P10T , IXTA7N60P , IXTA80N10T , IXTA80N10T7 .

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