IXTH48P20P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTH48P20P

Type of IXTH48P20P transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 462

Maximum drain-source voltage |Uds|, V: 200V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 48

Maximum junction temperature (Tj), °C:

Rise Time of IXTH48P20P transistor (tr), nS: 260ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.085

Package: TO247

Equivalent transistors for IXTH48P20P

IXTH48P20P PDF documents for downloads:

5.1. ixth440n055t2_tt440n055t2.pdf Size:187K _ixys

Advance Technical Information TrenchT2TM VDSS = 55V IXTH440N055T2 ID25 = 440A Power MOSFET IXTT440N055T2 ? ? RDS(on) ? ? ? 1.8m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25°C to 175°C55 V VDGR TJ = 25°C to 175°C, RGS = 1M? 55 V VGSS Continuous ± 20 V VGSM Transient ± 30 V TO-268 (IXTT) ID25 TC = 25°C (Chip Capability) 440 A G ILRMS Lead Current Limit, RMS 160 A S IDM TC = 25°C, Pulse Width Limited by TJM 1200 A D (Tab) IA TC = 25°C 200 A EAS TC = 25°C 1.5 J G = Gate D = Drain PD TC = 25°C 1000 W S = Source Tab = Drain TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C Features TL 1.6mm (0.062in.) from Case for 10s 300 °C International Standard Packages Tsold Plastic Body for 10 seconds 260 °C 175°C Operating Temperature Md Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. High Current Handling Capability Avalanche Rated Weight

5.2. ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf Size:154K _ixys

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 ? ? RDS(on) ? ? ? 270m? ? ? ? ? IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1M? 500 V TO-247 (IXTH) VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C24 A IDM TC = 25°C, Pulse Width Limited by TJM 50 A G D D (Tab) S IA TC = 25°C12 A EAS TC = 25°C 750 mJ G = Gate D = Drain dv/dt IS ? IDM, VDD ? VDSS, TJ ? 150°C 15 V/ns S = Source Tab = Drain PD TC = 25°C 480 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features TL Maximum Lead Temperature for Soldering 300 °C Avalanche Rated TSOLD Plastic Body for 10s 260 °C Fast Intrinsic Diode FC Mounting Force TO-263 10..65 / 2.2..14.6 Nm/lb.in. Dynamic dv/dt Rated Md Mo

5.3. ixth35n30_ixth40n30_ixtm40n30.pdf Size:107K _ixys

VDSS ID25 RDS(on) MegaMOSTMFET ? ? IXTH 35N30 300 V 35 A 0.10 ? ? ? ? IXTH 40N30 300 V 40 A 0.085 ? ? ? ? ? IXTM 40N30 300 V 40 A 0.088 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 300 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C 35N30 35 A TO-204 AE (IXTM) 40N30 40 A IDM TC = 25°C, pulse width limited by TJM 35N30 140 A 40N30 160 A PD TC = 25°C 300 W TJ -55 ... +150 °C G D TJM 150 °C G = Gate, D = Drain, Tstg -55 ... +150 °C S = Source, TAB = Drain Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 300 °C Features 1.6 mm (0.062 in.) from case for 10 s International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Co

5.4. ixtp450p2_ixth450p2_ixtq450p2.pdf Size:111K _ixys

Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 ? ? RDS(on) ? ? ? 330m? ? ? ? ? IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V TO-3P (IXTQ) VDGR TJ = 25°C to 150°C, RGS = 1M? 500 V VGSS Continuous ± 30 V VGSM Transient ± 40 V G D ID25 TC = 25°C16 A S IDM TC = 25°C, Pulse Width Limited by TJM 35 A Tab IA TC = 25°C16 A TO-247(IXTH) EAS TC = 25°C 750 mJ dv/dt IS ? IDM, VDD ? VDSS, TJ ? 150°C 10 V/ns PD TC = 25°C 300 W TJ -55 ... +150 °C G D Tab TJM 150 °C S Tstg -55 ... +150 °C G = Gate D = Drain TL Maximum Lead Temperature for Soldering 300 °C S = Source Tab = Drain TSOLD Plastic Body for 10s 260 °C Md Mounting Torque 1.13/10 Nm/lb.in. Features Weight TO-220 3.0 g TO-3P 5.5 g Avalanche Rated TO-247 6.0 g Fast Intrinsic Diode Dynamic dv/dt Ra

See also transistors datasheet: IXTH40N50L2 , IXTH41N25 , IXTH420N04T2 , IXTH440N055T2 , IXTH44P15T , IXTH450P2 , IXTH460P2 , IXTH48N20 , 2SK2866 , IXTH4N150 , IXTH500N04T2 , IXTH50N25T , IXTH50N30 , IXTH50P085 , IXTH50P10 , IXTH52P10P , IXTH60N10 .

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