IXTK550N055T2
MOSFET transistor datasheet. Parameters and characteristics. Type Designator: IXTK550N055T2
Type of IXTK550N055T2
transistor: MOSFET
Type of control channel: N
-Channel Maximum power dissipation (Pd), W: 1250
Maximum drain-source voltage |Uds|, V: 55V
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 550
Maximum junction temperature (Tj), °C:
Rise Time of IXTK550N055T2
transistor (tr), nS: 100ns
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.0016
Package: TO264
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IXTK550N055T2
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. Keywords| IXTK550N055T2
Datasheet | IXTK550N055T2
Datenblatt | IXTK550N055T2
RoHS | IXTK550N055T2
Distributor | | IXTK550N055T2
Application Notes | IXTK550N055T2
Component | IXTK550N055T2
Circuit | IXTK550N055T2
Schematic | | IXTK550N055T2
Equivalent | IXTK550N055T2
Cross Reference | IXTK550N055T2
Data Sheet | IXTK550N055T2
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