IXTL2x220N075T MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTL2x220N075T

Type of IXTL2x220N075T transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 75V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 120

Maximum junction temperature (Tj), °C:

Rise Time of IXTL2x220N075T transistor (tr), nS: 50ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0055

Package: ISOPLUS_i5Pak

Equivalent transistors for IXTL2x220N075T

IXTL2x220N075T PDF documents for downloads:

1.1. ixtl2x220n075t.pdf Size:66K _ixys

Advance Technical Information TrenchMVTM IXTL2x220N075T VDSS = 75 V ID25 = 2x120 A Power MOSFETs ? ? RDS(on) ? 5.5 m? ? ? ? ? ? ? Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG Avalanche Rated ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C75 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 75 V VGSM Transient ± 20 V ID25 TC = 25°C 120 A (Combined die total = 240 A) ILRMS Package Current Limit, RMS 75 A (Combined die total = 150 A) Isolated back surface IDM TC = 25°C, pulse width limited by TJM 600 A D IAR TC = 25°C25 A S G EAS TC = 25°C 1.0 J S D dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS 3 V/ns G = Gate D = Drain S = Source TJ ? 175°C, RG = 3.3 ? PD TC = 25°C 150 W Features TJ -55 ... +175 °C Ultra-low On Resistance TJM 175 °C Unclamped Inductive Switching (UIS) Tstg -55 ... +175 °C rated Low package inductance TL 1.6 mm (0.062 in.) from case for 10 s 30

3.1. ixtl2x200n085t.pdf Size:66K _ixys

Advance Technical Information TrenchMVTM IXTL2x200N085T VDSS = 85 V ID25 = 2x112 A Power MOSFETs ? ? RDS(on) ? 6.0 m? ? ? ? ? ? ? Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode RG RG Avalanche Rated ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C85 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 85 V VGSM Transient ± 20 V ID25 TC = 25°C 112 A (Combined die total = 224 A) ILRMS Package Current Limit, RMS 75 A (Combined die total = 150 A) Isolated back IDM TC = 25°C, pulse width limited by TJM 540 A surface D IAR TC = 25°C25 A S EAS TC = 25°C 1.0 J G S D dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS 3 V/ns G = Gate D = Drain TJ ? 175°C, RG = 5 ? S = Source PD TC = 25°C 150 W Features TJ -55 ... +175 °C Ultra-low On Resistance TJM 175 °C Unclamped Inductive Switching (UIS) Tstg -55 ... +175 °C rated Low package inductance TL 1.6 mm (0.062 in.) from case for 10 s

3.2. ixtl2x240n055t.pdf Size:66K _ixys

Advance Technical Information IXTL2x240N055T VDSS =55 V TrenchMVTM ID25 = 2x140 A Power MOSFETs ? ? RDS(on) ? 4.4 m? ? ? ? ? ? ? Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated RG RG ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C55 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 55 V VGSM Transient ± 20 V ID25 TC = 25°C 140 A (Combined die total = 280 A) ILRMS Package Current Limit, RMS 75 A Isolated back (Combined die total = 150 A) surface IDM TC = 25°C, pulse width limited by TJM 650 A D S G IAS TC = 25°C25 A S EAS TC = 25°C 1.0 J D G = Gate D = Drain dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS 3 V/ns S = Source TJ ? 175°C, RG = 3.3 ? PD TC = 25°C 150 W Features TJ -55 ... +175 °C Ultra-low On Resistance TJM 175 °C Unclamped Inductive Switching (UIS) Tstg -55 ... +175 °C rated Low package inductance TL 1.6 mm (0.062 in.) from case for 10 s

See also transistors datasheet: IXTK82N25P , IXTK88N30P , IXTK8N150L , IXTK90N15 , IXTK90N25L2 , IXTK90P20P , IXTL2x180N10T , IXTL2x200N085T , HRF3205 , IXTL2x240N055T , IXTN110N20L2 , IXTN120N25 , IXTN170P10P , IXTN17N120L , IXTN200N10L2 , IXTN200N10T , IXTN22N100L .

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