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IXTP110N055P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTP110N055P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 390 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Drain Current |Id|: 110 A

Rise Time (tr): 80 nS

Maximum Drain-Source On-State Resistance (Rds): 0.0135 Ohm

Package: TO220

IXTP110N055P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXTP110N055P PDF doc:

1.1. ixta110n055p_ixtp110n055p_ixtq110n055p.pdf Size:254K _ixys

IXTP110N055P
IXTP110N055P

IXTA 110N055P VDSS = 55 V PolarHTTM IXTP 110N055P ID25 = 110 A Power MOSFET IXTQ 110N055P RDS(on) ? 13.5 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C55 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGS Continuous 20 V TO-220 (IXTP) VGSM Tranisent 30 V ID25 TC = 25 C 110

1.2. ixta110n055t_ixtp110n055t.pdf Size:216K _ixys

IXTP110N055P
IXTP110N055P

Preliminary Technical Information IXTA110N055T VDSS = 55 V TrenchMVTM IXTP110N055T ID25 = 110 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 110 A ILRMS Lead Cur

5.1. ixta180n085t_ixtp180n085t.pdf Size:214K _ixys

IXTP110N055P
IXTP110N055P

Preliminary Technical Information IXTA180N085T VDSS = 85 V TrenchMVTM IXTP180N085T ID25 = 180 A Power MOSFET ? ? RDS(on) ? 5.5 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 180 A ILRMS Lead Cu

5.2. ixta1n80p_ixtp1n80p_ixtu1n80p_ixty1n80p.pdf Size:161K _ixys

IXTP110N055P
IXTP110N055P

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET ? ? RDS(on) ? ? ? 14? ? ? ? ? IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150

5.3. ixta152n085t_ixtp152n085t.pdf Size:214K _ixys

IXTP110N055P
IXTP110N055P

Preliminary Technical Information VDSS = 85 V IXTA152N085T TrenchMVTM ID25 = 152 A IXTP152N085T Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 152 A ILRMS Lead C

5.4. ixta1n100p_ixtp1n100p.pdf Size:95K _ixys

IXTP110N055P
IXTP110N055P

Advance Technical Information IXTA 1N100P VDSS = 1000 V PolarHVTM IXTP 1N100P ID25 = 1.2 A Power MOSFET ? RDS(on) = 13 ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G VGS Continuous 20 V S (TAB) VGSM Transient 30 V ID25 TC = 25C 1.2 A IDM TC =

5.5. ixta14n60p_ixtq14n60p_ixtp14n60p.pdf Size:147K _ixys

IXTP110N055P
IXTP110N055P

IXTA 14N60P VDSS = 600 V PolarHVTM IXTP 14N60P ID25 = 14 A Power MOSFET ? ? IXTQ 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V G VGS Continuous 30 V S (TAB) VGSM Tranisent 40 V ID25 TC = 25C14 A TO-220 (IXTP) IDM TC =

5.6. ixta1n100_ixtp1n100.pdf Size:535K _ixys

IXTP110N055P
IXTP110N055P

VDSS = 1000 V IXTA 1N100 High Voltage MOSFET IXTP 1N100 ID25 = 1.5 A ? RDS(on) = 11 ? ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 30 V D (TAB) G VGSM Transient 40 V D S ID25 TC = 25C 1.5 A IDM TC = 25C, pulse width lim

5.7. ixtp10n60pm.pdf Size:54K _ixys

IXTP110N055P
IXTP110N055P

Preliminary Technical Information IXTP 10N60PM VDSS = 600 V PolarHVTM ID25 = 5 A Power MOSFET ? ? RDS(on) ? ? ? 740 m? ? ? ? ? (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings (IXTP...M) OUTLINE VDSS TJ = 25C to 175C 600 V VDGR TJ = 25C to 175C; RGS = 1 M? 600 V VGS Continuous 30 V VGSM Transient

5.8. ixth15n50l2-ixtp15n50l2.pdf Size:133K _ixys

IXTP110N055P
IXTP110N055P

Linear L2TM Power VDSS = 500V IXTH15N50L2 MOSFET w/Extended ID25 = 15A IXTP15N50L2 ? ? RDS(on) ? 480m? ? ? ? ? ? ? FBSOA N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V G (TAB) D VDGR TJ = 25C to 150C, RGS = 1M? 500 V S VGSS Continuous 20 V TO-247 (IXTH) VGSM Transient 30 V ID25 TC = 25C15 A I

5.9. ixta16n50p_ixtp16n50p_ixtq16n50p.pdf Size:143K _ixys

IXTP110N055P
IXTP110N055P

IXTA 16N50P VDSS = 500 V PolarHVTM IXTP 16N50P ID25 = 16 A Power MOSFET IXTQ 16N50P RDS(on) ? ? ? ? ? 400 m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25C16 A IDM TC = 25C, pulse wid

5.10. ixtp1r6n50p_ixty1r6n50p.pdf Size:91K _ixys

IXTP110N055P
IXTP110N055P

IXTP 1R6N50P VDSS = 500 V PolarHVTM IXTY 1R6N50P ID25 = 1.6 A Power MOSFET ? ? RDS(on) ? 6.5 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V G (TAB) D VGSM Transient 40 V S ID25 TC = 25C 1.6 A IDM TC = 25C, pulse width li

5.11. ixta182n055t_ixtp182n055t.pdf Size:221K _ixys

IXTP110N055P
IXTP110N055P

Preliminary Technical Information IXTA182N055T VDSS = 55 V TrenchMVTM IXTP182N055T ID25 = 182 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 182 A ILRMS Lead Cu

5.12. ixta160n04t2_ixtp160n04t2.pdf Size:204K _ixys

IXTP110N055P
IXTP110N055P

Preliminary Technical Information IXTA160N04T2 VDSS = 40V TrenchT2TM IXTP160N04T2 ID25 = 160A Power MOSFET ? ? RDS(on) ? ? ? 5m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C40 V S VDGR TJ = 25C to 175C, RGS = 1M? 40 V (TAB) VGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25C 160 A ILRMS Lead

5.13. ixta1n80_ixtp1n80_ixty1n80.pdf Size:60K _ixys

IXTP110N055P
IXTP110N055P

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode ? RDS(on) = 11 ? ? ? ? Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 TC = 25C 750 mA TO-2

5.14. ixta160n10t_ixtp160n10t.pdf Size:174K _ixys

IXTP110N055P
IXTP110N055P

Preliminary Technical Information IXTA160N10T VDSS = 100 V TrenchMVTM IXTP160N10T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 175C 100 V TO-220 (IXTP) VDGR TJ = 25C to 175C; RGS = 1 M? 100 V VGSM Transient 30 V ID25 TC = 25C 160 A IL

5.15. ixta180n10t_ixtp180n10t.pdf Size:154K _ixys

IXTP110N055P
IXTP110N055P

IXTA180N10T VDSS = 100V TrenchMVTM IXTP180N10T ID25 = 180A Power MOSFET ? ? ? ? RDS(on) ? 6.4m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 175C 100 V TO-220 (IXTP) VDGR TJ = 25C to 175C, RGS = 1M? 100 V VGSM Transient 30 V ID25 TC = 25C 180 A ILRMS Lead Current limit, RMS 75 A G

5.16. ixta160n075t_ixtp160n075t.pdf Size:174K _ixys

IXTP110N055P
IXTP110N055P

Preliminary Technical Information IXTA160N075T VDSS = 75 V TrenchMVTM IXTP160N075T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 6.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V G VGSM Transient 20 V S D (TAB) ID25 TC = 25C 160 A TO-220 (IXTP) ILRMS

5.17. ixty1r6n50d2_ixta1r6n50d2_ixtp1r6n50d2.pdf Size:179K _ixys

IXTP110N055P
IXTP110N055P

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY1R6N50D2 MOSFET ID(on) > 1.6A IXTA1R6N50D2 ? ? RDS(on) ? 2.3? ? ? ? ? ? ? IXTP1R6N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25C to 150C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25C 100 W D (Tab) TJ - 55 ... +150 C TJM 15

Datasheet: IXTP08N120P , IXTP08N50D2 , IXTP100N04T2 , IXTP102N15T , IXTP10N60P , IXTP10N60PM , IXTP10P15T , IXTP10P50P , APT50M38JLL , IXTP110N055T , IXTP110N055T2 , IXTP120N04T2 , IXTP120N075T2 , IXTP120P065T , IXTP12N50P , IXTP12N50PM , IXTP130N065T2 .

 


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