IXTP1R6N100D2 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTP1R6N100D2

Type of IXTP1R6N100D2 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 1000V

Maximum gate-source voltage |Ugs|, V: 4.5

Maximum drain current |Id|, A: 1.6

Maximum junction temperature (Tj), °C:

Rise Time of IXTP1R6N100D2 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 10

Package: TO220

Equivalent transistors for IXTP1R6N100D2

IXTP1R6N100D2 PDF documents for downloads:

2.1. ixtp1r6n50p_ixty1r6n50p.pdf Size:91K _ixys

IXTP 1R6N50P VDSS = 500 V PolarHVTM IXTY 1R6N50P ID25 = 1.6 A Power MOSFET ? ? RDS(on) ? 6.5 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 500 V VGS Continuous ±30 V G (TAB) D VGSM Transient ±40 V S ID25 TC = 25°C 1.6 A IDM TC = 25°C, pulse width limited by TJM 2.5 A TO-252 (IXTY) IAR TC = 25°C 1.6 A EAR TC = 25°C5 mJ EAS TC = 25°C75 mJ G dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns S TJ ? 150°C, RG = 50 ? (TAB) PD TC = 25°C43 W TJ -55 ... +150 °C G = Gate D = Drain S = Source TAB = Drain TJM 150 °C Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10 s 260 °C Md Mounting torque (TO-220) 1.13/10 Nm/lb.in. Features Weight TO-252 0.8 g International standard packages Unclamped Inductive Switching (UIS) TO-220 4 g rated Low package inductance - easy to drive

2.2. ixty1r6n50d2_ixta1r6n50d2_ixtp1r6n50d2.pdf Size:179K _ixys

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY1R6N50D2 MOSFET ID(on) > 1.6A IXTA1R6N50D2 ? ? RDS(on) ? 2.3? ? ? ? ? ? ? IXTP1R6N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25°C to 150°C 500 V VGSX Continuous ±20 V VGSM Transient ±30 V G S PD TC = 25°C 100 W D (Tab) TJ - 55 ... +150 °C TJM 150 °C TO-220AB (IXTP) Tstg - 55 ... +150 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. G Weight TO-252 0.35 g D D (Tab) S TO-263 2.50 g TO-220 3.00 g G = Gate D = Drain S = Source Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Symbol Test Conditions Characteristic Values Flammability Classification (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. BVDSX VGS = - 5V, ID = 250?A 500 V Advantages VGS(off) VDS = 25V, ID = 100?A

5.1. ixta16n50p_ixtp16n50p_ixtq16n50p.pdf Size:143K _ixys

IXTA 16N50P VDSS = 500 V PolarHVTM IXTP 16N50P ID25 = 16 A Power MOSFET IXTQ 16N50P RDS(on) ? ? ? ? ? 400 m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 500 V G VGS Continuous ±30 V S VGSM Transient ±40 V (TAB) ID25 TC = 25°C16 A IDM TC = 25°C, pulse width limited by TJM 48 A TO-220 (IXTP) IAR TC = 25°C16 A EAR TC = 25°C25 mJ EAS TC = 25°C 750 mJ (TAB) G dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns D S TJ ? 150°C, RG = 10 ? PD TC = 25°C 300 W TO-3P (IXTQ) TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C G Md Mounting torque (TO-220, TO-3P) 1.13/10 Nm/lb.in. D (TAB) S Weight TO-220 4 g TO-263 3 g TO-3P 5.5 g G = Gate D = Drain S = Source TAB = Drain Symbol Test Conditions Characteristic Values Features (TJ = 25°C, unless

5.2. ixta180n10t_ixtp180n10t.pdf Size:154K _ixys

IXTA180N10T VDSS = 100V TrenchMVTM IXTP180N10T ID25 = 180A Power MOSFET ? ? ? ? RDS(on) ? 6.4m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25°C to 175°C 100 V TO-220 (IXTP) VDGR TJ = 25°C to 175°C, RGS = 1M? 100 V VGSM Transient ± 30 V ID25 TC = 25°C 180 A ILRMS Lead Current limit, RMS 75 A G IDM TC = 25°C, pulse width limited by TJM 450 A D S (TAB) IAR TC = 25°C25 A EAS TC = 25°C 750 mJ G = Gate D = Drain PD TC = 25°C 480 W S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C TL 1.6mm (0.062in.) from case for 10s 300 °C Ultra-low On Resistance TSOLD Plastic body for 10 seconds 260 °C Unclamped Inductive Switching (UIS) rated Md Mounting torque (TO-220) 1.13/10 Nm/lb.in Low package inductance Weight TO-263 2.5 g - easy to drive and to protect TO-220 3.0 g 175 °C Operating Temperature Advantages Easy to mount Spa

5.3. ixta14n60p_ixtq14n60p_ixtp14n60p.pdf Size:147K _ixys

IXTA 14N60P VDSS = 600 V PolarHVTM IXTP 14N60P ID25 = 14 A Power MOSFET ? ? IXTQ 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 600 V G VGS Continuous ±30 V S (TAB) VGSM Tranisent ±40 V ID25 TC = 25°C14 A TO-220 (IXTP) IDM TC = 25°C, pulse width limited by TJM 42 A IAR TC = 25°C14 A EAR TC = 25°C25 mJ (TAB) G EAS TC = 25°C 750 mJ D S dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns TJ ? 150°C, RG = 10 ? TO-3P (IXTQ) PD TC = 25°C 300 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C G TL 1.6 mm (0.062 in.) from case for 10 s 300 °C D (TAB) S TSOLD Plastic body for 10 s 260 °C Md Mounting torque (TO-3P,TO-220) 1.13/10 Nm/lb.in. G = Gate D = Drain S = Source TAB = Drain Weight TO-3P 5.5 g TO-220 4 g TO-263 2 g Features Symbol Test Conditions Characteristic Values International sta

5.4. ixta160n04t2_ixtp160n04t2.pdf Size:204K _ixys

Preliminary Technical Information IXTA160N04T2 VDSS = 40V TrenchT2TM IXTP160N04T2 ID25 = 160A Power MOSFET ? ? RDS(on) ? ? ? 5m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 175°C40 V S VDGR TJ = 25°C to 175°C, RGS = 1M? 40 V (TAB) VGSM Transient ± 20 V TO-220 (IXTP) ID25 TC = 25°C 160 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25°C, pulse width limited by TJM 400 A IA TC = 25°C80 A G D (TAB) S EAS TC = 25°C 600 mJ PD TC = 25°C 250 W G = Gate D = Drain TJ -55 ... +175 °C S = Source TAB = Drain TJM 175 °C Tstg -55 ... +175 °C Features TL 1.6mm (0.062in.) from case for 10s 300 °C Tsold Plastic body for 10 seconds 260 °C International standard packages Md Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. 175°C Operating Temperature Weight TO-263 2.5 g Avalanche rated TO-220 3.0 g High current handling capability Low RDS(on) Advantages Easy to mount

5.5. ixta110n055t_ixtp110n055t.pdf Size:216K _ixys

Preliminary Technical Information IXTA110N055T VDSS = 55 V TrenchMVTM IXTP110N055T ID25 = 110 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25° C to 175° C55 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 55 V G VGSM Transient ± 20 V S (TAB) ID25 TC = 25° C 110 A ILRMS Lead Current Limit, RMS 75 A TO-220 (IXTP) IDM TC = 25° C, pulse width limited by TJM 300 A IAR TC = 25° C25 A EAS TC = 25° C 750 mJ dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns G (TAB) D TJ ?175° C, RG = 5 ? S PD TC = 25° C 230 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C Ultra-low On Resistance TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Unclamped Inductive Switching (UIS) TSOLD Plastic body for 10 seconds 260 °C rated Low package inductance Md Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. - easy to d

5.6. ixta160n10t_ixtp160n10t.pdf Size:174K _ixys

Preliminary Technical Information IXTA160N10T VDSS = 100 V TrenchMVTM IXTP160N10T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25°C to 175°C 100 V TO-220 (IXTP) VDGR TJ = 25°C to 175°C; RGS = 1 M? 100 V VGSM Transient ± 30 V ID25 TC = 25°C 160 A ILRMS Lead Current Limit, RMS 75 A G (TAB) IDM TC = 25°C, pulse width limited by TJM 430 A D S IAR TC = 25°C25 A EAS TC = 25°C 500 mJ G = Gate D = Drain S = Source TAB = Drain dv/dt IS ? IDM, di/dt ? 100 A/?s, VDD ? VDSS 3 V/ns TJ ? 175°C, RG = 5 ? Features Ultra-low On Resistance PD TC = 25°C 430 W Unclamped Inductive Switching (UIS) TJ -55 ... +175 °C rated TJM 175 °C Low package inductance Tstg -55 ... +175 °C - easy to drive and to protect 175 °C Operating Temperature TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 seconds 260 °C

5.7. ixta1n100p_ixtp1n100p.pdf Size:95K _ixys

Advance Technical Information IXTA 1N100P VDSS = 1000 V PolarHVTM IXTP 1N100P ID25 = 1.2 A Power MOSFET ? RDS(on) = 13 ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 1000 V G VGS Continuous ±20 V S (TAB) VGSM Transient ±30 V ID25 TC = 25°C 1.2 A IDM TC = 25°C, pulse width limited by TJM 2.4 A TO-220 (IXTP) IAR TC = 25°C 1.0 A EAR TC = 25°C6 mJ EAS TC = 25°C 200 mJ (TAB) G dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 5 V/ns D S TJ ? 150°C, RG = 47 ? PD TC = 25°C70 W G = Gate D = Drain TJ -55 ... +150 °C S = Source TAB = Drain TJM 150 °C Tstg -55 ... +150 °C TL Maximum tab temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C Features Md Mounting torque (TO-220) 1.13/10 Nm/lb.in. International standard packages Weight TO-220 4 g Unclamped Inductive Switching (UIS) TO-263 3 g rated Low package ind

5.8. ixta1n100_ixtp1n100.pdf Size:535K _ixys

VDSS = 1000 V IXTA 1N100 High Voltage MOSFET IXTP 1N100 ID25 = 1.5 A ? RDS(on) = 11 ? ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 1000 V VGS Continuous ±30 V D (TAB) G VGSM Transient ±40 V D S ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM 6 A TO-263 AA (IXTA) IAR 1.5 A EAR TC = 25°C6 mJ EAS TC = 25°C 200 mJ G dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 3 V/ns S D (TAB) TJ ? 150°C, RG = 18 ? PD TC = 25°C54 W G = Gate, D = Drain, TJ -55 ... +150 °C S = Source, TAB = Drain TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque 1.13/10 Nm/lb.in. Features Weight 4 g Maximum lead temperature for soldering 300 °C International standard packages 1.6 mm (0.062 in.) from case for 10 s High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Symbol Tes

5.9. ixta1n80_ixtp1n80_ixty1n80.pdf Size:60K _ixys

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode ? RDS(on) = 11 ? ? ? ? Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 800 V D (TAB) VGS Continuous ±20 V G D S VGSM Transient ±30 V ID25 TC = 25°C 750 mA TO-263 AA (IXTA) IDM TC = 25°C, pulse width limited by TJM 3 A IAR 1.0 A G EAR TC = 25°C5 mJ S D (TAB) EAS TC = 25°C 100 mJ TO-252 AA (IXTY) dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 3 V/ns TJ ? 150°C, RG = 47 ? PD TC = 25°C40 W G TJ -55 ... +150 °C S D (TAB) TJM 150 °C Tstg -55 ... +150 °C G = Gate, D = Drain, Md Mounting torque 1.13/10 Nm/lb.in. S = Source, TAB = Drain Weight TO-220 4 g Features TO-252 0.8 g TO-263 3 g International standard packages High voltage, Low RDS (on) HDMOSTM Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for

5.10. ixta182n055t_ixtp182n055t.pdf Size:221K _ixys

Preliminary Technical Information IXTA182N055T VDSS = 55 V TrenchMVTM IXTP182N055T ID25 = 182 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25° C to 175° C55 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 55 V G VGSM Transient ± 20 V S (TAB) ID25 TC = 25° C 182 A ILRMS Lead Current Limit, RMS 75 A TO-220 (IXTP) IDM TC = 25° C, pulse width limited by TJM 490 A IAR TC = 25° C25 A EAS TC = 25° C 1.0 J dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns G (TAB) D TJ ?175° C, RG = 5 ? S PD TC = 25° C 360 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C Features TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Ultra-low On Resistance TSOLD Plastic body for 10 seconds 260 °C Unclamped Inductive Switching (UIS) rated Md Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. Low package inductance - easy to dr

5.11. ixta160n075t_ixtp160n075t.pdf Size:174K _ixys

Preliminary Technical Information IXTA160N075T VDSS = 75 V TrenchMVTM IXTP160N075T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 6.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25°C to 175°C75 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 75 V G VGSM Transient ± 20 V S D (TAB) ID25 TC = 25°C 160 A TO-220 (IXTP) ILRMS Lead Current Limit, RMS 75 A IDM TC = 25°C, pulse width limited by TJM 430 A IAR TC = 25°C25 A D (TAB) EAS TC = 25°C 750 mJ GD S dv/dt IS ? IDM, di/dt ? 100 A/?s, VDD ? VDSS 3 V/ns TJ ? 175C, RG = 5 ? G = Gate D = Drain PD TC = 25°C 360 W S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C Ultra-low On Resistance TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Unclamped Inductive Switching (UIS) TSOLD Plastic body for 10 seconds 260 °C rated Low package inductance Md Mounting torque (TO-3P, TO-220) 1.13 / 10 Nm/lb.in. - easy to driv

5.12. ixta180n085t_ixtp180n085t.pdf Size:214K _ixys

Preliminary Technical Information IXTA180N085T VDSS = 85 V TrenchMVTM IXTP180N085T ID25 = 180 A Power MOSFET ? ? RDS(on) ? 5.5 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25° C to 175° C85 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 85 V G VGSM Transient ± 20 V S (TAB) ID25 TC = 25° C 180 A ILRMS Lead Current Limit, RMS 75 A TO-220 (IXTP) IDM TC = 25° C, pulse width limited by TJM 480 A IAR TC = 25° C25 A EAS TC = 25° C 1.0 J dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns G (TAB) D TJ ?175° C, RG = 5 ? S PD TC = 25° C 430 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C Ultra-low On Resistance TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Unclamped Inductive Switching (UIS) TSOLD Plastic body for 10 seconds 260 °C rated Low package inductance Md Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. - easy to dri

5.13. ixta110n055p_ixtp110n055p_ixtq110n055p.pdf Size:254K _ixys

IXTA 110N055P VDSS = 55 V PolarHTTM IXTP 110N055P ID25 = 110 A Power MOSFET IXTQ 110N055P RDS(on) ? 13.5 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25° C to 175° C55 V (TAB) VDGR TJ = 25° C to 175° C; RGS = 1 M? 55 V VGS Continuous ±20 V TO-220 (IXTP) VGSM Tranisent ±30 V ID25 TC = 25° C 110 A IDRMS External lead current limit 75 A (TAB) IDM TC = 25° C, pulse width limited by TJM 250 A G D S IAR TC = 25° C 110 A EAR TC = 25° C30 mJ TO-3P (IXTQ) EAS TC = 25° C 1.0 J dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 10 ? PD TC = 25° C 390 W G D (TAB) S TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +150 °C G = Gate D = Drain S = Source TAB = Drain TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 ° C Md Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in. Weight TO-3P 5.5 g Features TO-220 4 g TO-263 3 g l Intern

5.14. ixta152n085t_ixtp152n085t.pdf Size:214K _ixys

Preliminary Technical Information VDSS = 85 V IXTA152N085T TrenchMVTM ID25 = 152 A IXTP152N085T Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25° C to 175° C85 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 85 V G VGSM Transient ± 20 V S (TAB) ID25 TC = 25° C 152 A ILRMS Lead Current Limit, RMS 75 A TO-220 (IXTP) IDM TC = 25° C, pulse width limited by TJM 410 A IAR TC = 25° C25 A EAS TC = 25° C 750 mJ dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns G (TAB) D TJ ?175° C, RG = 5 ? S PD TC = 25° C 360 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C Features Ultra-low On Resistance TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 seconds 260 °C Unclamped Inductive Switching (UIS) rated Md Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. Low package inductance - easy to

5.15. ixta1n80p_ixtp1n80p_ixtu1n80p_ixty1n80p.pdf Size:161K _ixys

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET ? ? RDS(on) ? ? ? 14? ? ? ? ? IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C, RGS = 1M? 800 V G VGSS Continuous ±20 V S VGSM Transient ±30 V (TAB) ID25 TC = 25°C1 A G = Gate D = Drain IDM TC = 25°C, Pulse Width Limited by TJM 2A S = Source TAB = Drain IA TC = 25°C1 A EAS TC = 25°C75 mJ Features dV/dt IS ? IDM, VDD ? VDSS, TJ ? 150°C 5 V/ns International Standard Packages PD TC = 25°C42 W Fast Intrinsic Rectifier TJ -55 ... +150 °C Avalanche Rated TJM 150 °C Low Package Inductance Tstg -55 ... +150 °C TL 1.6mm (0.062) from Case for 10s 300 °C Advantages TSOLD Plastic Body for 10s 260 °C Easy to Mount Md Mounting Torque (TO-220)

5.16. ixtp10n60pm.pdf Size:54K _ixys

Preliminary Technical Information IXTP 10N60PM VDSS = 600 V PolarHVTM ID25 = 5 A Power MOSFET ? ? RDS(on) ? ? ? 740 m? ? ? ? ? (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings (IXTP...M) OUTLINE VDSS TJ = 25°C to 175°C 600 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 600 V VGS Continuous ±30 V VGSM Transient ±40 V Isolated Tab G D ID25 TC = 25°C5 A S IDM TC = 25°C, pulse width limited by TJM 30 A IAR TC = 25°C10 A EAR TC = 25°C20 mJ G = Gate D = Drain EAS TC = 25°C 500 mJ S = Source dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns TJ ? 150°C, RG = 10 ? PD TC = 25°C50 W Features TJ -55 ... +150 °C TJM 150 °C Plastic overmolded tab for electrical Tstg -55 ... +150 °C isolation International standard package TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Unclamped Inductive Switching (UIS) TSOLD Plastic body for 10 s 260 °C rated Low package inductance Md Mo

5.17. ixth15n50l2-ixtp15n50l2.pdf Size:133K _ixys

Linear L2TM Power VDSS = 500V IXTH15N50L2 MOSFET w/Extended ID25 = 15A IXTP15N50L2 ? ? RDS(on) ? 480m? ? ? ? ? ? ? FBSOA N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V G (TAB) D VDGR TJ = 25°C to 150°C, RGS = 1M? 500 V S VGSS Continuous ±20 V TO-247 (IXTH) VGSM Transient ±30 V ID25 TC = 25°C15 A IDM TC = 25°C, Pulse Width Limited by TJM 35 A IA TC = 25°C 15 A G (TAB) EAS TC = 25°C 750 mJ D S PD TC = 25°C 300 W G = Gate D = Drain TJ -55 ... +150 °C S = Source TAB = Drain TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Features Md Mounting Torque 1.13/10 Nm/lb.in. Designed for Linear Operation Weight TO-220 3.0 g International Standard Packages TO-247 6.0 g Avalanche Rated Guaranteed FBSOA at 75°C Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T

See also transistors datasheet: IXTP18P10T , IXTP1N100P , IXTP1N120P , IXTP1N80 , IXTP1N80P , IXTP1R4N100P , IXTP1R4N120P , IXTP1R4N60P , IRFP064N , IXTP1R6N50D2 , IXTP1R6N50P , IXTP200N055T2 , IXTP200N075T , IXTP200N085T , IXTP220N04T2 , IXTP220N055T , IXTP220N075T .

Keywords