IXTP3N60P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTP3N60P

Type of IXTP3N60P transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 70

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 3

Maximum junction temperature (Tj), °C:

Rise Time of IXTP3N60P transistor (tr), nS: 500ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.9

Package: TO220

Equivalent transistors for IXTP3N60P

IXTP3N60P PDF documents for downloads:

1.1. ixta3n60p_ixtp3n60p_ixty3n60p.pdf Size:228K _ixys

IXTA 3N60P VDSS = 600 V PolarHVTM IXTP 3N60P ID25 = 3.0 A Power MOSFET IXTY 3N60P ? ? RDS(on) ? 2.9 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 600 V VGS Continuous ± 30 V G S VGSM Transient ± 40 V (TAB) ID25 TC = 25° C 3.0 A TO-220 (IXTP) IDM TC = 25° C, pulse width limited by TJM 6A IAR TC = 25° C3 A EAR TC = 25° C10 mJ EAS TC = 25° C 100 mJ G dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 5 V/ns D (TAB) S TJ ?150° C, RG = 30 ? TO-252 (IXTY) PD TC = 25° C70 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C G TL 1.6 mm (0.062 in.) from case for 10 s 300 °C S (TAB) TSOLD Plastic body for 10 s 260 °C G = Gate D = Drain Weight TO-220 4 g S = Source TAB = Drain TO-263 3 g TO-252 0.35 g Features l International standard packages Symbol Test Conditions Characteristic Values l Unclamped Inductive Switchin

4.1. ixta3n50p_ixtp3n50p_ixty3n50p.pdf Size:237K _ixys

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET ? ? IXTY 3N50P RDS(on) ? 2.0 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 500 V VGSS ±30 V VGSM ±40 V (TAB) G D S ID25 TC = 25° C 3.6 A IDM TC = 25° C, pulse width limited by TJM 8A TO-263 (IXTA) IAR TC = 25° C3 A EAR TC = 25° C10 mJ EAS TC = 25° C 180 mJ G S dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns (TAB) TJ ?150° C, RG = 20 ? TO-252 (IXTY) PD TC = 25° C70 W TJ -55 ... +150 °C TJM 150 °C G Tstg -55 ... +150 °C S TL 1.6 mm (0.062 in.) from case for 10 s 300 °C (TAB) TSOLD Plastic body for 10 s 260 ° C G = Gate D = Drain Md Mounting torque (TO-220) 1.13/10 Nm/lb.in. S = Source TAB = Drain Weight TO-220 4 g Features TO-263 3 g TO-252 0.8 g l International standard packages l Unclamped Inductive Switching (UIS) rated l Low

4.2. ixta3n120_ixtp3n120.pdf Size:562K _ixys

VDSS ID25 RDS(on) High Voltage IXTA 3N120 ? ? ? ? Power MOSFETs 1200 V 3 A 4.5 ? IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 1200 V VGS Continuous ±20 V D (TAB) G VGSM Transient ±30 V D S ID25 TC = 25°C3 A IDM TC = 25°C, pulse width limited by TJM 12 A TO-263 (IXTA) IAR TC = 25°C3 A EAR TC = 25°C 20 mJ G EAS 700 mJ D (TAB) S dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 5 V/ns TJ ? 150°C, RG = 2 ? G = Gate D = Drain PD TC = 25°C 200 W S = Source TAB = Drain TJ -55 to +150 °C TJM 150 °C Features Tstg -55 to +150 °C TL 1.6 mm (0.063 in) from case for 10 s 300 °C International standard packages Low RDS (on) Md Mounting torque (TO-220) 1.13/10 Nm/lb.in. Rated for unclamped Inductive load Switching (UIS) Weight TO-220 4 g Molding epoxies meet UL 94 V-0 TO-263 2 g flammability classification A

4.3. ixta3n50d2-ixtp3n50d2.pdf Size:168K _ixys

Depletion Mode VDSX = 500V IXTA3N50D2 MOSFET ID(on) > 3A IXTP3N50D2 ? ? RDS(on) ? 1.5? ? ? ? ? ? ? N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S VDSX TJ = 25°C to 150°C 500 V D (Tab) VGSX Continuous ±20 V VGSM Transient ±30 V TO-220AB (IXTP) PD TC = 25°C 125 W TJ - 55 ... +150 °C TJM 150 °C Tstg - 55 ... +150 °C G D D (Tab) S TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C G = Gate D = Drain Md Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. S = Source Tab = Drain Weight TO-263 2.5 g TO-220 3.0 g Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions Characteristic Values • Easy to Mount (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. • Space Savings BVDSX VGS = - 5V, ID = 250?A 500 V • High Power Density VGS(off) VDS = 25V, ID = 250?A - 2.0 - 4.0 V Applications IGSX VGS = ±20V, V

See also transistors datasheet: IXTP36N30P , IXTP36P15P , IXTP3N100D2 , IXTP3N100P , IXTP3N110 , IXTP3N120 , IXTP3N50D2 , IXTP3N50P , BF982 , IXTP42N15T , IXTP42N25P , IXTP44N10T , IXTP44P15T , IXTP450P2 , IXTP460P2 , IXTP48N20T , IXTP48P05T .

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