IXTP76P10T MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTP76P10T

Type of IXTP76P10T transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 298

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 76

Maximum junction temperature (Tj), °C:

Rise Time of IXTP76P10T transistor (tr), nS: 70ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.025

Package: TO220

Equivalent transistors for IXTP76P10T

IXTP76P10T PDF documents for downloads:

4.1. ixta76n075t_ixtp76n075t.pdf Size:177K _ixys

Preliminary Technical Information IXTA76N075T VDSS = 75 V TrenchMVTM IXTP76N075T ID25 = 76 A Power MOSFET ? ? RDS(on) ? 12 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25°C to 175°C75 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 75 V G VGSM Transient ± 20 V S (TAB) ID25 TC = 25°C76 A ILRMS Lead Current Limit, RMS 75 A TO-220 (IXTP) IDM TC = 25°C, pulse width limited by TJM 210 A IAR TC = 25°C10 A EAS TC = 25°C 500 mJ dv/dt IS ? IDM, di/dt ? 100 A/?s, VDD ? VDSS 3 V/ns G (TAB) D TJ ? 175°C, RG = 10 ? S PD TC = 25°C 176 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C Features Ultra-low On Resistance TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Unclamped Inductive Switching (UIS) TSOLD Plastic body for 10 seconds 260 °C rated Md Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. Low package inductance - easy to drive and to

5.1. ixta7n60p_ixtp7n60p.pdf Size:182K _ixys

VDSS = 600 V IXTA 7N60P PolarHVTM ID25 = 7 A IXTP 7N60P Power MOSFET ? ? RDS(on) ? 1.1 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25° C to 175° C 600 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 600 V VGS Continuous ±30 V (TAB) G VGSM Transient ±40 V D S ID25 TC = 25° C7 A TO-263 (IXTA) IDM TC = 25° C, pulse width limited by TJM 14 A IAR TC = 25° C7 A EAR TC = 25° C20 mJ EAS TC = 25° C 400 mJ G S dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns (TAB) TJ ?150° C, RG = 18 ? G = Gate D = Drain PD TC = 25° C 150 W S = Source TAB = Drain TJ -55 ... +150 ° C TJM 150 ° C Tstg -55 ... +150 ° C Features TL 1.6 mm (0.062 in.) from case for 10 s 300 °C l International standard packages TSOLD Plastic body for 10 s 260 °C l Unclamped Inductive Switching (UIS) rated Md Mounting torque (TO-220) 1.13/10 Nm/lb.in. l Low package inductance Weight TO-220 4 g - easy to drive and to

5.2. ixta75n10p_ixtp75n10p_ixtq75n10p.pdf Size:252K _ixys

IXTA 75N10P VDSS = 100 V PolarHTTM IXTP 75N10P ID25 = 75 A Power MOSFET IXTQ 75N10P RDS(on) ? 25 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25° C to 175° C 100 V (TAB) VDGR TJ = 25° C to 175° C; RGS = 1 M? 100 V VGS Continuous ±20 V TO-220 (IXTP) VGSM Transient ±30 V ID25 TC = 25° C75 A IDM TC = 25° C, pulse width limited by TJM 200 A IAR TC = 25° C50 A (TAB) G D S EAR TC = 25° C30 mJ EAS TC = 25° C 1.0 J TO-3P (IXTQ) dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 10 ? PD TC = 25° C 360 W TJ -55 ... +175 °C G TJM 175 °C D (TAB) S Tstg -55 ... +175 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C G = Gate D = Drain TSOLD Plastic body for 10 s 260 ° C S = Source TAB = Drain Md Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in. Weight TO-3P 5.5 g Features TO-220 4 g TO-263 3 g l International standard packages l Unclamped Inducti

5.3. ixta70n085t_ixtp70n085t.pdf Size:175K _ixys

Preliminary Technical Information IXTA70N085T VDSS = 85 V TrenchMVTM IXTP70N085T ID25 = 70 A Power MOSFET ? ? RDS(on) ? 13.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25°C to 175°C85 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 85 V G VGSM Transient ± 20 V S (TAB) ID25 TC = 25°C70 A IDM TC = 25°C, pulse width limited by TJM 190 A TO-220 (IXTP) IAR TC = 25°C25 A EAS TC = 25°C 500 mJ dv/dt IS ? IDM, di/dt ? 100 A/?s, VDD ? VDSS 3 V/ns TJ ? 175°C, RG = 10 ? G (TAB) D S PD TC = 25°C 176 W G = Gate D = Drain TJ -55 ... +175 °C S = Source TAB = Drain TJM 175 °C Tstg -55 ... +175 °C Features Ultra-low On Resistance TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 seconds 260 °C Unclamped Inductive Switching (UIS) rated Md Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. Low package inductance - easy to drive and to protect Weight TO-220 3 g 175

See also transistors datasheet: IXTP6N100D2 , IXTP6N50D2 , IXTP6N50P , IXTP70N075T2 , IXTP70N085T , IXTP75N10P , IXTP76N075T , IXTP76N25T , IRF511 , IXTP7N60P , IXTP7N60PM , IXTP80N10T , IXTP80N12T2 , IXTP86N20T , IXTP88N085T , IXTP8N50P , IXTP8N50PM .

Keywords