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IXTQ102N15T MOSFET (IC) Datasheet. Cross Reference Search. IXTQ102N15T Equivalent

Type Designator: IXTQ102N15T

Type of IXTQ102N15T transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 455

Maximum drain-source voltage |Uds|, V: 150

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 102

Maximum junction temperature (Tj), °C:

Rise Time of IXTQ102N15T transistor (tr), nS: 97

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.018

Package: TO3P

IXTQ102N15T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXTQ102N15T PDF doc:

4.1. ixtk100n25p_ixtt100n25p_ixtq100n25p.pdf Size:274K _ixys

IXTQ102N15T
IXTQ102N15T

IXTK 100N25P VDSS = 250 V PolarHTTM IXTQ 100N25P ID25 = 100 A Power MOSFET ? ? IXTT 100N25P RDS(on)? 27 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 250 V VGSS Continuous 20 V G D (TAB) DS VGSM Transient 30 V ID25 TC = 25 C 100 A ID(RMS) Ex

5.1. ixth160n075t_ixtq160n075t.pdf Size:184K _ixys

IXTQ102N15T
IXTQ102N15T

Preliminary Technical Information IXTH160N075T VDSS = 75 V TrenchMVTM IXTQ160N075T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 6.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25C to 175C 75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V VGSM Transient 20 V ID25 TC = 25C 160 A D (TAB) ILRMS Lead Current Lim

5.2. ixta110n055p_ixtp110n055p_ixtq110n055p.pdf Size:254K _ixys

IXTQ102N15T
IXTQ102N15T

IXTA 110N055P VDSS = 55 V PolarHTTM IXTP 110N055P ID25 = 110 A Power MOSFET IXTQ 110N055P RDS(on) ? 13.5 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C55 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGS Continuous 20 V TO-220 (IXTP) VGSM Tranisent 30 V ID25 TC = 25 C 110

5.3. ixth180n085t_ixtq180n085t.pdf Size:203K _ixys

IXTQ102N15T
IXTQ102N15T

Preliminary Technical Information IXTH180N085T VDSS = 85 V TrenchMVTM IXTQ180N085T ID25 = 180 A Power MOSFET ? ? RDS(on) ? 5.5 m ? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25 C 180

5.4. ixtq140n10p_ixtt140n10p.pdf Size:171K _ixys

IXTQ102N15T
IXTQ102N15T

IXTQ 140N10P VDSS = 100 V PolarHTTM IXTT 140N10P ID25 = 140 A Power MOSFET ? ? RDS(on) ? 11 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 140 A ID(RMS) External lead current limit 75 A

5.5. ixth182n055t_ixtq182n055t.pdf Size:211K _ixys

IXTQ102N15T
IXTQ102N15T

Preliminary Technical Information IXTH182N055T VDSS = 55 V TrenchMVTM IXTQ182N055T ID25 = 182 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25 C 182 A

5.6. ixth152n085t_ixtq152n085t.pdf Size:184K _ixys

IXTQ102N15T
IXTQ102N15T

Preliminary Technical Information IXTH152N085T VDSS = 85 V TrenchMVTM IXTQ152N085T ID25 = 152 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25C to 175C85 V VDGR TJ = 25C to 175C; RGS = 1 M? 85 V VGSM Transient 20 V ID25 TC = 25C 152 A ILRMS Lead Current Limit, RMS 75

5.7. ixtk150n15p_ixtq150n15p.pdf Size:252K _ixys

IXTQ102N15T
IXTQ102N15T

IXTK 150N15P PolarHTTM VDSS = 150 V IXTQ 150N15P Power MOSFET ID25 = 150 A ? ? RDS(on)? 13 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V G D (TAB) VGS Continuous 20 V D S VGSM Transient 30 V ID25 TC = 25 C 150 A TO-3P (IXTQ) ID(RMS

5.8. ixtq120n15p_ixtt120n15p.pdf Size:171K _ixys

IXTQ102N15T
IXTQ102N15T

IXTQ 120N15P VDSS = 150 V PolarHTTM IXTT 120N15P ID25 = 120 A Power MOSFET ? ? RDS(on) ? 16 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V VDSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D (TAB) ID(RMS) External lead c

5.9. ixth180n10t_ixtq180n10t.pdf Size:205K _ixys

IXTQ102N15T
IXTQ102N15T

Preliminary Technical Information IXTH180N10T VDSS = 100 V TrenchMVTM IXTQ180N10T ID25 = 180 A Power MOSFET ? ? RDS(on) ? 6.4 m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C 100 V S VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGSM Transient 30 V TO-3P (IXTQ) ID25 TC = 25 C 18

5.10. ixta14n60p_ixtq14n60p_ixtp14n60p.pdf Size:147K _ixys

IXTQ102N15T
IXTQ102N15T

IXTA 14N60P VDSS = 600 V PolarHVTM IXTP 14N60P ID25 = 14 A Power MOSFET ? ? IXTQ 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V G VGS Continuous 30 V S (TAB) VGSM Tranisent 40 V ID25 TC = 25C14 A TO-220 (IXTP) IDM TC =

5.11. ixtk120n20p_ixtq120n20p.pdf Size:191K _ixys

IXTQ102N15T
IXTQ102N15T

IXTK 120N20P PolarHTTM VDSS = 200 V IXTQ 120N20P Power MOSFET ID25 = 120 A ? ? RDS(on)? 22 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 200 V G VGS Continuous 20 V D (TAB) S VGSM Transient 30 V ID25 TC = 25 C 120 A TO-3P (IXTQ) ID(RMS)

5.12. ixtq18n60p_ixtv18n60p.pdf Size:171K _ixys

IXTQ102N15T
IXTQ102N15T

IXTQ 18N60P VDSS = 600 V PolarHVTM IXTV 18N60P ID25 = 18 A Power MOSFET ? ? IXTV 18N60PS RDS(on) ? ? ? 420 m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGS Continuous 30 V G VGSM Tranisent 40 V D (TAB) D S ID25 TC = 25C18 A IDM TC = 25C, pul

5.13. ixta16n50p_ixtp16n50p_ixtq16n50p.pdf Size:143K _ixys

IXTQ102N15T
IXTQ102N15T

IXTA 16N50P VDSS = 500 V PolarHVTM IXTP 16N50P ID25 = 16 A Power MOSFET IXTQ 16N50P RDS(on) ? ? ? ? ? 400 m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25C16 A IDM TC = 25C, pulse wid

5.14. ixth160n10t_ixtq160n10t.pdf Size:186K _ixys

IXTQ102N15T
IXTQ102N15T

Preliminary Technical Information IXTH160N10T VDSS = 100 V TrenchMVTM IXTQ160N10T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C; RGS = 1 M? 100 V VGSM Transient 30 V TO-3P (IXTQ) ID25 TC = 25C 160 A

5.15. ixtq150n06p.pdf Size:148K _ixys

IXTQ102N15T
IXTQ102N15T

IXTQ 150N06P VDSS = 60 V PolarHTTM ID25 = 150 A Power MOSFET ? ? RDS(on) ? 10 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C60 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 60 V VGS Continuous 20 V G VGSM Transient 30 V D (TAB) S ID25 TC = 25 C 150 A IDRMS External lead current limit 75 A I

5.16. ixtq110n10p_ixtt110n10p.pdf Size:170K _ixys

IXTQ102N15T
IXTQ102N15T

IXTQ 110N10P VDSS = 100 V PolarHTTM IXTT 110N10P ID25 = 110 A Power MOSFET ? ? RDS(on) ? 15 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C 110 A (TAB) S ID(RMS) External lead cu

See also transistors datasheet: IXTP8N50PM , IXTP90N055T , IXTP90N055T2 , IXTP90N075T2 , IXTP90N15T , IXTP96P085T , IXTP98N075T , IXTQ100N25P , IRF640 , IXTQ102N20T , IXTQ10P50P , IXTQ110N055P , IXTQ110N10P , IXTQ120N15P , IXTQ120N20P , IXTQ130N10T , IXTQ130N15T .

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