IXTQ40N50Q MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTQ40N50Q

Type of IXTQ40N50Q transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 500

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 40

Maximum junction temperature (Tj), °C:

Rise Time of IXTQ40N50Q transistor (tr), nS: 600ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.14

Package: TO3P

Equivalent transistors for IXTQ40N50Q

IXTQ40N50Q PDF documents for downloads:

5.1. ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf Size:154K _ixys

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 ? ? RDS(on) ? ? ? 270m? ? ? ? ? IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1M? 500 V TO-247 (IXTH) VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C24 A IDM TC = 25°C, Pulse Width Limited by TJM 50 A G D D (Tab) S IA TC = 25°C12 A EAS TC = 25°C 750 mJ G = Gate D = Drain dv/dt IS ? IDM, VDD ? VDSS, TJ ? 150°C 15 V/ns S = Source Tab = Drain PD TC = 25°C 480 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features TL Maximum Lead Temperature for Soldering 300 °C Avalanche Rated TSOLD Plastic Body for 10s 260 °C Fast Intrinsic Diode FC Mounting Force TO-263 10..65 / 2.2..14.6 Nm/lb.in. Dynamic dv/dt Rated Md Mo

5.2. ixtq470p2.pdf Size:89K _ixys

Advance Technical Information PolarP2TM VDSS = 500V IXTQ470P2 ID25 = 42A Power MOSFET ? ? RDS(on) ? ? ? 145m? ? ? ? ? trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1M? 500 V G D VGSS Continuous ± 30 V S Tab VGSM Transient ± 40 V ID25 TC = 25°C42 A G = Gate D = Drain IDM TC = 25°C, Pulse Width Limited by TJM 126 A S = Source Tab = Drain IA TC = 25°C42 A EAS TC = 25°C 1.3 J dv/dt IS ? IDM, VDD ? VDSS, TJ ? 150°C 10 V/ns PD TC = 25°C 830 W Features TJ -55 ... +150 °C TJM 150 °C Avalanche Rated Tstg -55 ... +150 °C Fast Intrinsic Diode Dynamic dv/dt Rated TL Maximum Lead Temperature for Soldering 300 °C Low Package Inductance TSOLD Plastic Body for 10s 260 °C Md Mounting Torque 1.13/10 Nm/lb.in. Advantages Weight 5.5 g High Power Density Easy to Mount Space Savings Applications Symbo

5.3. ixta42n25p_ixtp42n25p_ixtq42n25p.pdf Size:252K _ixys

IXTA 42N25P VDSS = 250 V PolarHTTM IXTP 42N25P ID25 = 42 A Power MOSFET ? ? IXTQ 42N25P RDS(on) ? 84 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25° C to 150° C 250 V S VDGR TJ = 25° C to 150° C; RGS = 1 M? 250 V (TAB) VGS Continuous ±20 V TO-220 (IXTP) VGSM Transient ±30 V ID25 TC = 25° C42 A IDM TC = 25° C, pulse width limited by TJM 110 A IAR TC = 25° C42 A (TAB) G D S EAR TC = 25° C30 mJ EAS TC = 25° C 1.0 J TO-3P (IXTQ) dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 10 ? PD TC = 25° C 300 W TJ -55 ... +150 °C G TJM 150 °C D (TAB) S Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 ° C G = Gate D = Drain S = Source TAB = Drain Md Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in. Weight TO-3P 5.5 g TO-220 4 g Features TO-263 3 g l International standard packages l Unclamped Inductiv

5.4. ixtp450p2_ixth450p2_ixtq450p2.pdf Size:111K _ixys

Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 ? ? RDS(on) ? ? ? 330m? ? ? ? ? IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V TO-3P (IXTQ) VDGR TJ = 25°C to 150°C, RGS = 1M? 500 V VGSS Continuous ± 30 V VGSM Transient ± 40 V G D ID25 TC = 25°C16 A S IDM TC = 25°C, Pulse Width Limited by TJM 35 A Tab IA TC = 25°C16 A TO-247(IXTH) EAS TC = 25°C 750 mJ dv/dt IS ? IDM, VDD ? VDSS, TJ ? 150°C 10 V/ns PD TC = 25°C 300 W TJ -55 ... +150 °C G D Tab TJM 150 °C S Tstg -55 ... +150 °C G = Gate D = Drain TL Maximum Lead Temperature for Soldering 300 °C S = Source Tab = Drain TSOLD Plastic Body for 10s 260 °C Md Mounting Torque 1.13/10 Nm/lb.in. Features Weight TO-220 3.0 g TO-3P 5.5 g Avalanche Rated TO-247 6.0 g Fast Intrinsic Diode Dynamic dv/dt Ra

5.5. ixtq44n50p.pdf Size:148K _ixys

IXTQ 44N50P VDSS = 500 V PolarHVTM ID25 = 44 A Power MOSFET ? ? RDS(on) ? 140 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 500 V VGS Continuous ±30 V VGSM Transient ±40 V G ID25 TC = 25° C44 A D (TAB) IDM TC = 25° C, pulse width limited by TJM 110 A S IAR TC = 25° C44 A EAR TC = 25° C55 mJ G = Gate D = Drain EAS TC = 25° C 1.7 J S = Source TAB = Drain dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 10 ? PD TC = 25° C 650 W TJ -55 ... +150 °C Features TJM 150 °C Tstg -55 ... +150 °C l International standard packages l Unclamped Inductive Switching (UIS) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C rated l Low package inductance Md Mounting torque(TO-247) 1.13/10 Nm/lb.in. - easy to drive and to protect Weight 6g Advantages l Easy to mount l Symbol

5.6. ixtq480p2.pdf Size:89K _ixys

Advance Technical Information PolarP2TM VDSS = 500V IXTQ480P2 ID25 = 52A Power MOSFET ? ? RDS(on) ? ? ? 120m? ? ? ? ? trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1M? 500 V G D VGSS Continuous ± 30 V S Tab VGSM Transient ± 40 V ID25 TC = 25°C52 A G = Gate D = Drain IDM TC = 25°C, Pulse Width Limited by TJM 150 A S = Source Tab = Drain IA TC = 25°C52 A EAS TC = 25°C 1.5 J dv/dt IS ? IDM, VDD ? VDSS, TJ ? 150°C 10 V/ns PD TC = 25°C 960 W Features TJ -55 ... +150 °C TJM 150 °C Avalanche Rated Tstg -55 ... +150 °C Fast Intrinsic Diode Dynamic dv/dt Rated TL Maximum Lead Temperature for Soldering 300 °C Low Package Inductance TSOLD Plastic Body for 10s 260 °C Md Mounting Torque 1.13/10 Nm/lb.in. Advantages Weight 5.5 g High Power Density Easy to Mount Space Savings Applications Symbo

See also transistors datasheet: IXTQ30N50P , IXTQ30N60L2 , IXTQ30N60P , IXTQ32P20T , IXTQ36N30P , IXTQ36N50P , IXTQ36P15P , IXTQ40N50L2 , BSS138 , IXTQ42N25P , IXTQ44N50P , IXTQ44P15T , IXTQ450P2 , IXTQ460P2 , IXTQ470P2 , IXTQ480P2 , IXTQ48N20T .

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