IXTR90P20P
MOSFET transistor datasheet. Parameters and characteristics. Type Designator: IXTR90P20P
Type of IXTR90P20P
transistor: MOSFET
Type of control channel: P
-Channel Maximum power dissipation (Pd), W: 312
Maximum drain-source voltage |Uds|, V: 200V
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 53
Maximum junction temperature (Tj), °C:
Rise Time of IXTR90P20P
transistor (tr), nS: 315ns
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.048
Package: ISOPLUS247
Equivalent transistors for IXTR90P20P
IXTR90P20P
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. Keywords| IXTR90P20P
Datasheet | IXTR90P20P
Datenblatt | IXTR90P20P
RoHS | IXTR90P20P
Distributor | | IXTR90P20P
Application Notes | IXTR90P20P
Component | IXTR90P20P
Circuit | IXTR90P20P
Schematic | | IXTR90P20P
Equivalent | IXTR90P20P
Cross Reference | IXTR90P20P
Data Sheet | IXTR90P20P
Fiche Technique |
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