IXTV02N250S MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTV02N250S

Type of IXTV02N250S transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 57

Maximum drain-source voltage |Uds|, V: 2500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.2

Maximum junction temperature (Tj), °C:

Rise Time of IXTV02N250S transistor (tr), nS: 1500ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 450

Package: PLUS220SMD

Equivalent transistors for IXTV02N250S

IXTV02N250S PDF documents for downloads:

5.1. ixth03n400_ixtv03n400s.pdf Size:186K _ixys

Advance Technical Information High Voltage VDSS = 4000V IXTH03N400 ID25 = 300mA Power MOSFET IXTV03N400S ? ? RDS(on) ? 290? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 4000 V D D (Tab) S VDGR TJ = 25°C to 150°C, RGS = 1M? 4000 V VGSS Continuous ±20 V VGSM Transient ±30 V PLUS220SMD (IXTV_S) ID25 TC = 25°C 300 mA IDM TC = 25°C, Pulse Width Limited by TJM 800 mA PD TC = 25°C 130 W G S TJ - 55 ... +150 °C D (Tab) TJM 150 °C Tstg - 55 ... +150 °C G = Gate D = Drain TL 1.6mm (0.062 in.) from Case for 10s 300 °C S = Source Tab = Drain TSOLD Plastic Body for 10s 260 °C Md Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. FC Mounting Force (PLUS220) 11..65 / 25..14.6 N/lb. Features Weight PLUS220 4 g International Standard Packages TO-247 6 g Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions Characteristic Values

See also transistors datasheet: IXTU02N50D , IXTU05N100 , IXTU12N06T , IXTU1N80P , IXTU1R4N60P , IXTU2N80P , IXTU4N60P , IXTU5N50P , IRF520 , IXTV03N400S , IXTV102N20T , IXTV110N25TS , IXTV18N60P , IXTV18N60PS , IXTV200N10T , IXTV200N10TS , IXTV22N50P .

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