IXTV280N055TS MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTV280N055TS

Type of IXTV280N055TS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 550

Maximum drain-source voltage |Uds|, V: 55V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 280

Maximum junction temperature (Tj), °C:

Rise Time of IXTV280N055TS transistor (tr), nS: 70ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0032

Package: PLUS220_SMD

Equivalent transistors for IXTV280N055TS

IXTV280N055TS PDF documents for downloads:

1.1. ixtv280n055t.pdf Size:295K _ixys

Preliminary Technical Information IXTV 280N055T VDSS = 55 V TrenchMVTM IXTV 280N055TS ID25 = 280 A Power MOSFET ? ? RDS(on) ? 3.2 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25° C to 175° C55 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 55 V VGSM Transient ± 20 V G D D (TAB) S ID25 TC = 25° C 280 A ILRMS Lead Current Limit, RMS 75 A PLUS220SMD (IXTV_S) IDM TC = 25° C, pulse width limited by TJM 600 A IAR TC = 25° C40 A EAS TC = 25° C 1.5 J dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns G S TJ ?175° C, RG = 3.3 ? D (TAB) PD TC = 25° C 550 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C Features TJM 175 °C Ultra-low On Resistance Tstg -55 ... +175 °C Unclamped Inductive Switching (UIS) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C rated TSOLD Plastic body for 10 seconds 260 °C Low package inductance - easy to drive and to protect FC Mounting fo

5.1. ixth22n50p_ixtq22n50p_ixtv22n50p.pdf Size:198K _ixys

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) ? ? ? ? ? 270 m? ? ? ? ? N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25°C to 150°C 500 V S VDGR TJ = 25°C to 150°C; RGS = 1 M? 500 V VGS Continuous ±30 V TO-3P (IXTQ) VGSM Transient ±40 V ID25 TC = 25°C22 A IDM TC = 25°C, pulse width limited by TJM 66 A G IAR TC = 25°C22 A D (TAB) S EAR TC = 25°C30 mJ EAS TC = 25°C 750 mJ PLUS220 (IXTV) dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns TJ ? 150°C, RG = 10 ? PD TC = 25°C 350 W G TJ -55 ... +150 °C D D (TAB) S TJM 150 °C Tstg -55 ... +150 °C PLUS220SMD (IXTV...S) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-3P 5.5 g G PLUS220 & PLUS220SMD 4 g S D (TAB) G = Gate D = Drain S = Source TAB = Drain Symbol Test Conditions Characte

5.2. ixtq22n60p_ixtv22n60p.pdf Size:314K _ixys

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET ? ? IXTV 22N60PS RDS (on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 600 V VGS Continuous ±30 V G D (TAB) S VGSM Tranisent ±40 V ID25 TC = 25° C22 A IDM TC = 25° C, pulse width limited by TJM 66 A PLUS220 (IXTV) IAR TC = 25° C22 A EAR TC = 25° C40 mJ EAS TC = 25° C 1.0 J G dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns D D (TAB) S TJ ?150° C, RG = 4 ? PD TC = 25° C 400 W PLUS220SMD (IXTV_S) TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C G Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in. D (TAB) S FC Mounting force (PLUS 220) 11...65/2.5...15 N/lb Weight TO-3P 6 g G = Gate D = Drain PLUS220 & PLUS220SMD 5.0 g S = Source TAB = Drain Features S

5.3. ixtv230n085t.pdf Size:296K _ixys

Preliminary Technical Information VDSS = 85 V IXTV230N085T TrenchMVTM ID25 = 230 A IXTV230N085TS Power MOSFET ? ? RDS(on) ? 4.4 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25° C to 175° C85 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 85 V VGSM Transient ± 20 V G D D (TAB) S ID25 TC = 25° C 230 A ILRMS Lead Current Limit, RMS 75 A PLUS220SMD (IXTV_S) IDM TC = 25° C, pulse width limited by TJM 520 A IAR TC = 25° C40 A EAS TC = 25° C 1.0 J dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns G S TJ ?175° C, RG = 3.3 ? D (TAB) PD TC = 25° C 550 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C Ultra-low On Resistance TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Unclamped Inductive Switching (UIS) TSOLD Plastic body for 10 seconds 260 °C rated Low package inductance FC Mounting force (PLUS220) 11...65 /2.5...15 N

5.4. ixtq26n50p_ixtt26n50p_ixtv26n50p.pdf Size:338K _ixys

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET ? ? IXTV 26N50P RDS(on) ? 230 m? ? ? ? ? ? ? IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25° C to 150° C 500 V D S D (TAB) VDGR TJ = 25° C to 150° C; RGS = 1 M? 500 V TO-268 (IXTT) VGSS Continuos ±30 V VGSM Transient ±40 V ID25 TC = 25° C26 A G S IDM TC = 25° C, pulse width limited by TJM 78 A D (TAB) IAR TC = 25° C26 A PLUS220 (IXTV) EAR TC = 25° C40 mJ EAS TC = 25° C 1.0 J dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns G TJ ?150° C, RG = 4 ? D D (TAB) S PD TC = 25° C 400 W TJ -55 ... +150 °C PLUS220SMD (IXTV_S) TJM 150 °C Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 ° C G Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in. D (TAB) S Weight TO-3P 6 g G = Gate D = Drain TO-268 5.5 g S = Source TAB = Drain PLUS220 & PLUS220SMD 5 g Featur

5.5. ixtv250n075t.pdf Size:294K _ixys

Preliminary Technical Information IXTV250N075T VDSS = 75 V TrenchMVTM IXTV250N075TS ID25 = 250 A Power MOSFET ? ? RDS(on) ? 4.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25° C to 175° C75 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 75 V VGSM Transient ± 20 V G D D (TAB) S ID25 TC = 25° C 250 A ILRMS Lead Current Limit, RMS 75 A PLUS220SMD (IXTV_S) IDM TC = 25° C, pulse width limited by TJM 560 A IAR TC = 25° C40 A EAS TC = 25° C 1.5 J dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns G S TJ ?175° C, RG = 3.3 ? D (TAB) PD TC = 25° C 550 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C Features TJM 175 °C Ultra-low On Resistance Tstg -55 ... +175 °C Unclamped Inductive Switching (UIS) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C rated TSOLD Plastic body for 10 seconds 260 °C Low package inductance - easy to drive and to protect FC Mounting forc

5.6. ixtt26n60p_ixtv26n60p_ixtv26n60ps_ixth26n60p_ixtq26n60p.pdf Size:230K _ixys

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET ? ? IXTT26N60P RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V TO-3P (IXTQ) VDGR TJ = 25°C to 150°C; RGS = 1 M? 600 V VGSS Continuous ±30 V VGSM Transient ±40 V G D ID25 TC = 25°C26 A S D (TAB) IDM TC = 25°C, pulse width limited by TJM 65 A TO-268 (IXTT) IAR TC = 25°C13 A EAR TC = 25°C40 mJ EAS TC = 25°C 1.2 J G S dv/dt IS ? IDM, di/dt ? 100 A/?s, VDD ? VDSS 10 V/ns D (TAB) TJ ? 150°C, RG = 5 ? PLUS220 (IXTV) PD TC = 25°C 460 W TJ -55 ... +150 °C TJM 150 °C G Tstg -55 ... +150 °C D D (TAB) S TL 1.6 mm (0.062 in.) from case for 10 s 300 °C PLUS220SMD (IXTV_S) TSOLD Plastic body for 10 s 260 °C Md Mounting torque (TO-3P&TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..15 N/lb Weight TO-3P 5.5 g G TO-247 6.0 g S D (

See also transistors datasheet: IXTV250N075TS , IXTV26N50P , IXTV26N50PS , IXTV26N60P , IXTV26N60PS , IXTV270N055T2 , IXTV270N055T2S , IXTV280N055T , 3SK74 , IXTV30N50P , IXTV30N50PS , IXTV30N60P , IXTV30N60PS , IXTV36N50P , IXTV36N50PS , IXTV86N25T , IXTV96N25T .

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