IXTV30N50P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTV30N50P

Type of IXTV30N50P transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 460

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), °C:

Rise Time of IXTV30N50P transistor (tr), nS: 400ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package: PLUS220

Equivalent transistors for IXTV30N50P

IXTV30N50P PDF documents for downloads:

1.1. ixth30n50p_ixtq30n50p_ixtt30n50p_ixtv30n50p.pdf Size:336K _ixys

VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 500 V VGSS Continuous ±30 V VGSM Transient ±40 V G D (TAB) ID25 TC = 25° C30 A S IDM TC = 25° C, pulse width limited by TJM 75 A TO-268 (IXTT) IAR TC = 25° C30 A EAR TC = 25° C40 mJ EAS TC = 25° C 1.2 J G S dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns (TAB) TJ ?150° C, RG = 5 ? PLUS220 (IXTV) PD TC = 25° C 460 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C G DS (TAB) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C PLUS220 SMD(IXTV..S) Md Mounting torque (TO-247, TO-3P) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220, PLUS220SMD) 11 65/2.5 15 N/lb. Weight PLUS220, PLUS

3.1. ixth30n60p_ixtq30n60p_ixtt30n60p_ixtv30n60p.pdf Size:352K _ixys

IXTH 30N60P VDSS = 600 V PolarHVTM IXTQ 30N60P ID25 = 30 A Power MOSFET ? ? ? ? IXTT 30N60P RDS(on) ? 240 m? ? ? ? ? N-Channel Enhancement Mode IXTV 30N60P Avalanche Rated IXTV 30N60PS Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 600 V VGSS Continuous ±30 V VGSM Transient ±40 V G D (TAB) D ID25 TC = 25° C30 A S IDM TC = 25° C, pulse width limited by TJM 80 A TO-3P (IXTQ) IAR TC = 25° C30 A EAR TC = 25° C50 mJ EAS TC = 25° C 1.5 J G dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns D D (TAB) S TJ ?150° C, RG = 4 ? PD TC = 25° C 540 W TO-268 (IXTT) TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C G S TL 1.6 mm (0.062 in.) from case for 10 s 300 ° C D (TAB) TSOLD Plastic body for 10 s 260 ° C PLUS220 (IXTV) Md Mounting torque (TO-3P, TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..15 N/lb. Weight TO-247 6.0 g G TO-3P 5.5 g D D (TAB) PLUS22

5.1. ixth36n50p_ixtq36n50p_ixtt36n50p_ixtv36n50p.pdf Size:361K _ixys

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET ? ? IXTT 36N50P RDS(on) ? 170 m? ? ? ? ? ? ? IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V G VDGR TJ = 25° C to 150° C; RGS = 1 M? 500 V (TAB) D S VGS Continuous ±30 V VGSM Transient ±40 V TO-247 (IXTH) ID25 TC = 25° C36 A IDM TC = 25° C, pulse width limited by TJM 108 A IAR TC = 25° C36 A (TAB) EAR TC = 25° C50 mJ EAS TC = 25° C 1.5 J TO-268 (IXTT) dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 3 ? PD TC = 25° C 540 W G TJ -55 ... +150 °C S D (TAB) TJM 150 °C Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C PLUS220 (IXTV) TSOLD Plastic body for 10 s 260 °C Md Mounting torque(TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 20..120/4.5..15 N/lb G D (TAB) D Weight TO-247 6 g S TO-268 5 g PLUS220 2 g PLUS220 SMD(IXTV.

See also transistors datasheet: IXTV26N50P , IXTV26N50PS , IXTV26N60P , IXTV26N60PS , IXTV270N055T2 , IXTV270N055T2S , IXTV280N055T , IXTV280N055TS , 2SJ201 , IXTV30N50PS , IXTV30N60P , IXTV30N60PS , IXTV36N50P , IXTV36N50PS , IXTV86N25T , IXTV96N25T , IXTX110N20L2 .

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