IXTV96N25T
MOSFET transistor datasheet. Parameters and characteristics. Type Designator: IXTV96N25T
Type of IXTV96N25T
transistor: MOSFET
Type of control channel: N
-Channel Maximum power dissipation (Pd), W: 625
Maximum drain-source voltage |Uds|, V: 250V
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 96
Maximum junction temperature (Tj), °C:
Rise Time of IXTV96N25T
transistor (tr), nS: 158ns
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.029
Package: PLUS220
Equivalent transistors for IXTV96N25T
IXTV96N25T
PDF documents for downloads: PDF unavailable! See also transistors datasheet: IXTV280N055TS
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. Keywords| IXTV96N25T
Datasheet | IXTV96N25T
Datenblatt | IXTV96N25T
RoHS | IXTV96N25T
Distributor | | IXTV96N25T
Application Notes | IXTV96N25T
Component | IXTV96N25T
Circuit | IXTV96N25T
Schematic | | IXTV96N25T
Equivalent | IXTV96N25T
Cross Reference | IXTV96N25T
Data Sheet | IXTV96N25T
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