All MOSFET. IXTY48P05T Datasheet

 

IXTY48P05T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTY48P05T

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Drain Current |Id|: 48 A

Rise Time (tr): 30 nS

Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm

Package: TO252

IXTY48P05T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXTY48P05T 说明书

5.1. ixta4n60p_ixtp4n60p_ixtu4n60p_ixty4n60p.pdf Size:141K _ixys

IXTY48P05T
IXTY48P05T

IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) ? 2.0 ? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C4 A IDM T

5.2. ixtp44n10t_ixty44n10t.pdf Size:187K _ixys

IXTY48P05T
IXTY48P05T

Preliminary Technical Information IXTP44N10T VDSS = 100 V TrenchMVTM IXTY44N10T ID25 = 44 A Power MOSFET ? ? RDS(on) ? 30 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S TO-252 AA (IXTY) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V G VGSM Transient 30 V S D (TAB) I

Datasheet: IXTY2N100P , IXTY2N60P , IXTY2N80P , IXTY2R4N50P , IXTY32P05T , IXTY3N50P , IXTY3N60P , IXTY44N10T , BSS138 , IXTY4N60P , IXTY50N085T , IXTY55N075T , IXTY5N50P , IXTY64N055T , IXTZ550N055T2 , IXUC160N075 , IXUV170N075 .

 


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