IXUC160N075 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXUC160N075

Type of IXUC160N075 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 300

Maximum drain-source voltage |Uds|, V: 75V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 160

Maximum junction temperature (Tj), °C:

Rise Time of IXUC160N075 transistor (tr), nS: 120ns

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0065

Package: ISOPLUS220

Equivalent transistors for IXUC160N075

IXUC160N075 PDF documents for downloads:

1.1. ixuc160n075.pdf Size:511K _ixys

ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ISOPLUS220TM ID25 = 160 A ? Electrically Isolated Back Surface RDS(on)= 6.5 m? ? ? ? ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C75 V D S Isolated back surface* VGS Continuous ±20 V ID25 TC = 25°C; Note 1 160 A G = Gate, D = Drain, S = Source ID90 TC = 90°C, Note 1 130 A IS25 TC = 25°C; Note 1, 2 160 A IS90 TC = 90°C, Note 1, 2 120 A Features ID(RMS) Package lead current limit 50 A Silicon chip on Direct-Copper-Bond substrate EAS TC = 25°C tbd mJ - High power dissipation - Isolated mounting surface PD TC = 25°C 300 W - 2500V electrical isolation TJ -55 ... +175 °C Trench MOSFET - very low RDS(on) TJM 175 °C - fast switching Tstg -55 ... +150 °C - usable intrinsic reverse diode Low drain to tab capacitance(<15pF) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Unclamped Inductive Switching (UIS) rated VISOL RMS leads-to-tab, 50/60 Hz, t

See also transistors datasheet: IXTY44N10T , IXTY48P05T , IXTY4N60P , IXTY50N085T , IXTY55N075T , IXTY5N50P , IXTY64N055T , IXTZ550N055T2 , BF982 , IXUV170N075 , IXUV170N075S , LKK47-06C5 , MKE11R600DCGFC , MKE11R600DCGFC , MKE11R600DCGFC , MMIX1F520N075T2 , MMIX1T550N055T2 .

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