MKE11R600DCGFC
MOSFET transistor datasheet. Parameters and characteristics. Type Designator: MKE11R600DCGFC
Type of MKE11R600DCGFC
transistor: MOSFET
Type of control channel: N
-Channel Maximum power dissipation (Pd), W:
Maximum drain-source voltage |Uds|, V: 600V
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 15
Maximum junction temperature (Tj), °C:
Rise Time of MKE11R600DCGFC
transistor (tr), nS: 4ns
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.165
Package: ISOPLUS_i4PAC
Equivalent transistors for MKE11R600DCGFC
MKE11R600DCGFC
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. Keywords| MKE11R600DCGFC
Datasheet | MKE11R600DCGFC
Datenblatt | MKE11R600DCGFC
RoHS | MKE11R600DCGFC
Distributor | | MKE11R600DCGFC
Application Notes | MKE11R600DCGFC
Component | MKE11R600DCGFC
Circuit | MKE11R600DCGFC
Schematic | | MKE11R600DCGFC
Equivalent | MKE11R600DCGFC
Cross Reference | MKE11R600DCGFC
Data Sheet | MKE11R600DCGFC
Fiche Technique |
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