BLA0912-250R MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BLA0912-250R

Type of BLA0912-250R transistor: LDMOS

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 250

Maximum drain-source voltage |Uds|, V: 36V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A:

Maximum junction temperature (Tj), °C:

Rise Time of BLA0912-250R transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: SOT502A

Equivalent transistors for BLA0912-250R

BLA0912-250R PDF documents for downloads:

1.1. bla0912-250r.pdf Size:328K _philips

BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified. Mode of operation f tp ? VDS PL Gp ?Gp ?D Pdroop(pulse) tr tf Zth(j-h) ?ins(rel) (MHz) (?s) % (V) (W) (dB) (dB) (%) (dB) (ns) (ns) (K/W) (deg) all modes 960 to 1215 100 10 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5 TCAS 1030 to 1090 32 0.1 36 250 14.0 0.8 50 0 25 6 0.07 ±5 Mode-S 1030 to 1090 128 2 36 250 13.5 0.8 50 0.1 25 6 0.15 ±5 1030 to 1090 340 1 36 250 13.5 0.8 50 0.2 25 6 0.20 ±5 JTIDS 960 to 1215 3300 22 36 200 13.0 1.2 45 0.2 25 6 0.45 ±5 CAUTION This

1.2. bla0912-250.pdf Size:328K _philips

BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified. Mode of operation f tp ? VDS PL Gp ?Gp ?D Pdroop(pulse) tr tf Zth(j-h) ?ins(rel) (MHz) (?s) % (V) (W) (dB) (dB) (%) (dB) (ns) (ns) (K/W) (deg) all modes 960 to 1215 100 10 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5 TCAS 1030 to 1090 32 0.1 36 250 14.0 0.8 50 0 25 6 0.07 ±5 Mode-S 1030 to 1090 128 2 36 250 13.5 0.8 50 0.1 25 6 0.15 ±5 1030 to 1090 340 1 36 250 13.5 0.8 50 0.2 25 6 0.20 ±5 JTIDS 960 to 1215 3300 22 36 200 13.0 1.2 45 0.2 25 6 0.45 ±5 CAUTION This device

See also transistors datasheet: BF1212 , BF1212R , BF1212WR , BF1214 , BF1218 , BF904AR , BF904AWR , BLA0912-250 , IRF730 , BLA1011-10 , BLA1011-2 , BLA1011-200 , BLA1011-200R , BLA1011-300 , BLA1011S-200 , BLA1011S-200R , BLA6G1011-200R .

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