BLF7G21L-160P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BLF7G21L-160P

Type of BLF7G21L-160P transistor: LDMOS

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 45

Maximum drain-source voltage |Uds|, V: 28V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A:

Maximum junction temperature (Tj), °C:

Rise Time of BLF7G21L-160P transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: SOT1121A

Equivalent transistors for BLF7G21L-160P

BLF7G21L-160P PDF documents for downloads:

4.1. blf7g27l-100_blf7g27ls-100.pdf Size:165K _philips

BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2500 to 2700 900 28 20 18 28 -45[1] - Single carrier W-CDMA 2500 to 2700 900 28 25 17.5 30 - -41[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for

4.2. blf7g22l-200_blf7g22ls-200.pdf Size:199K _philips

BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 — 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1620 28 55 18.5 31 -31[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF pow

4.3. blf7g20l-200_7g20ls-200.pdf Size:282K _philips

BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 ?C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1620 28 55 18 33 ?29 [1] [1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 1.2 Features and benefits ? Excellent ruggedness ? High efficiency ? Low Rth providing excellent thermal stability ? Designed for broadband operation (1805 MHz to 1990 MHz) ? Lower output capacitance for improved performance in Doherty applications ? Designed for low-memory effects providing excellent digital pre-distortion capability ? Internally matched for ease of use ? Integrated E

4.4. blf7g20l-90p_blf7g20ls-90p.pdf Size:210K _philips

BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR400k ACPR600k EVMrms (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) (%) CW 1805 to 1880 550 28 84 19 54 - - - GSM EDGE 1805 to 1880 550 28 40 19.5 41 -61 -74 2.5 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, r

4.5. blf7g27l-150p_7g27ls-150p.pdf Size:304K _philips

BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2500 to 2700 1200 28 30 16.5 26 -47[1] - Single carrier W-CDMA 2500 to 2700 1200 28 45 16.5 31 - -38[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Design

4.6. blf7g20l-250p_7g20ls-250p.pdf Size:522K _philips

BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 ?C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1900 28 70 18 35 ?29.5[1] [1] Test signal: 3GPP; test model 1;64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF. 1.2 Features and benefits ? Excellent ruggedness ? High-efficiency ? Low Rth providing excellent thermal stability ? Designed for broadband operation (1805 MHz to 1880 MHz) ? Lower output capacitance for improved performance in Doherty applications ? Designed for low memory effects providing excellent digital pre-distortion capability ? Internally matched for ease of use ? Integrated ESD p

4.7. blf7g27l-75p_blf7g27ls-75p.pdf Size:289K _philips

BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 ?C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR885k (MHz) (mA) (V) (W) (dB) (%) (dBc) IS-95 2300 to 2400 650 28 12 17 26 ?46[1] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.2 Features and benefits ? Excellent ruggedness ? High efficiency ? Low Rth providing excellent thermal stability ? Designed for broadband operation (2300 MHz to 2700 MHz) ? Lower output capacitance for improved performance in Doherty applications ? Designed for low memory effects providing excellent pre-distortabi

4.8. blf7g20l-160p_blf7g20ls-160p.pdf Size:100K _philips

BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR400k ACPR600k EVMrms (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) (%) CW 1805 to 1880 850 28 135 17.5 57 - - - GSM EDGE 1805 to 1880 850 28 65 18.5 43 -61 -74 2.5 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low-memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to R

4.9. blf7g20ls-140p.pdf Size:422K _philips

BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp ?D ACPR400k ACPR600k EVMrms (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) (%) CW 1805 to 1880 850 28 125 17 54 - - - GSM EDGE 1805 to 1880 850 28 60 17.5 41 -61 -75 2.7 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Rest

See also transistors datasheet: BLF7G15LS-300P , BLF7G20L-200 , BLF7G20L-250P , BLF7G20L-90P , BLF7G20LS-140P , BLF7G20LS-200 , BLF7G20LS-250P , BLF7G20LS-90P , IRL3803 , BLF7G21LS-160P , BLF7G22L-100P , BLF7G22L-130 , BLF7G22L-160 , BLF7G22L-200 , BLF7G22L-250P , BLF7G22LS-100P , BLF7G22LS-130 .

Keywords