MOSFET Datasheet



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BSP122
  BSP122
  BSP122
  BSP122
 
BSP122
  BSP122
  BSP122
  BSP122
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
BSP122 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BSP122 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BSP122

Type of BSP122 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.5

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.55

Maximum junction temperature (Tj), °C:

Rise Time of BSP122 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.5

Package: SC73

Equivalent transistors for BSP122 - Cross-Reference Search

BSP122 PDF doc:

1.1. bsp122.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP122 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 200 V • High-speed switching ID DC drain current 550 mA • No secondary breakdown. RDS(on) drain-source on-resistance 2.5 ? VGS(th) gate-source threshold voltage 2 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in 4 d handbook, halfpage telephone sets and for applications in relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s Top view MAM054 PIN DESCRIPTION 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 drain LIMITING

5.1. bsp121.pdf Size:75K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source voltage VDS max. 200 V vertical D-MOS transistor in a Gate-source voltage (open drain) ±VGSO max. 20 V miniature SOT223 envelope and Drain current (DC) ID max. 350 mA designed for use as a line current Total power dissipation up to interrupter in telephone sets and for application in relay, high-speed and Tamb =25°CPtot max. 1.5 W line-transformer drivers. Drain-source on-resistance typ. 4.5 ? ID = 400 mA; VGS = 10 V RDS(on) max. 6.0 ? FEATURES • Direct interface to C-MOS, TTL, Transfer admittance min. 200 mS etc. ID = 400 mA; VDS = 25 V ? Yfs ? typ. 350 mS • High-speed switchi

5.2. bsp121_cnv_3.pdf Size:64K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source voltage VDS max. 200 V vertical D-MOS transistor in a Gate-source voltage (open drain) ±VGSO max. 20 V miniature SOT223 envelope and Drain current (DC) ID max. 350 mA designed for use as a line current Total power dissipation up to interrupter in telephone sets and for application in relay, high-speed and Tamb =25°CPtot max. 1.5 W line-transformer drivers. Drain-source on-resistance typ. 4.5 ? ID = 400 mA; VGS = 10 V RDS(on) max. 6.0 ? FEATURES • Direct interface to C-MOS, TTL, Transfer admittance min. 200 mS etc. ID = 400 mA; VDS = 25 V ? Yfs ? typ. 350 mS • High-speed switchi

5.3. bsp120.pdf Size:65K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP120 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 200 V vertical D-MOS transistor in a Drain-current (DC) ID max. 250 mA miniature SOT223 envelope and Drain-source ON-resistance designed for use as a line current typ. 7 ? ID = 250 mA; VGS = 10 V RDS(on) interrupter in telephone sets and for max. 12 ? application in relay, high-speed and line-transformer drivers. Gate threshold voltage VGS(th) max. 2.8 V FEATURES PINNING - SOT223 • Direct interface to C-MOS, TTL, 1 = gate etc. 2 = drain • High-speed switching 3 = source • No secondary breakdown 4 = drain Marking code BSP120 PIN CONFIGURATION 4 d handbook, halfpage g 1 2 3 s Top view

5.4. bsp127.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP127 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP127 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 270 V • High-speed switching ID DC drain current 350 mA • No secondary breakdown. RDS(on) drain-source on-resistance 8 ? VGS(th) gate-source threshold voltage 2 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in 4 d handbook, halfpage telephone sets and for applications in relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s PIN DESCRIPTION Top view MAM054 Code: BSP127 1 gate 2 drain Fig.1 Simplified outline (SOT223) and symbol. 3 source 4 dra

5.5. bsp126_cnv_2.pdf Size:65K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA miniature SOT223 envelope and Total power dissipation up to Tamb =25 °C Ptot max. 1.5 W designed for use as a line interrupter Drain-source on-resistance in telephone sets and for application typ. 5.0 ? in relay, high-speed and ID = 300 mA; VGS = 10 V RDS(on) max. 7.0 ? line-transformer drivers. Gate-source threshold voltage VGS(th) max. 2 V FEATURES • Direct interface to C-MOS, TTL, PINNING - SOT223 etc. 1 = gate • High-speed switching. 2 = drain • No secondary breakdown. 3 = source 4 = drain Marking code BSP126 PIN

5.6. bsp128.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP128 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 200 V • High-speed switching ID DC drain current 350 mA • No secondary breakdown. RDS(on) drain-source on-resistance 8 ? VGS(th) gate-source threshold voltage 1.8 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in 4 d handbook, halfpage relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s PIN DESCRIPTION Top view MAM054 Code: BSP128 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 dr

5.7. bsp126.pdf Size:75K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA miniature SOT223 envelope and Total power dissipation up to Tamb =25 °C Ptot max. 1.5 W designed for use as a line interrupter Drain-source on-resistance in telephone sets and for application typ. 5.0 ? in relay, high-speed and ID = 300 mA; VGS = 10 V RDS(on) max. 7.0 ? line-transformer drivers. Gate-source threshold voltage VGS(th) max. 2 V FEATURES • Direct interface to C-MOS, TTL, PINNING - SOT223 etc. 1 = gate • High-speed switching. 2 = drain • No secondary breakdown. 3 = source 4 = drain Marking code BSP126 PIN

5.8. bsp125.pdf Size:175K _siemens

BSP122
BSP122
BSP 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 125 600 V 0.12 A 45 ? SOT-223 BSP 125 Type Ordering Code Tape and Reel Information BSP 125 Q62702-S654 E6327 BSP 125 Q67000-S284 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 600 V VDGR Drain-gate voltage RGS = 20 k? 600 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID A TA = 39 °C 0.12 DC drain current, pulsed IDpuls TA = 25 °C 0.48 Power dissipation Ptot W TA = 25 °C 1.7 Semiconductor Group 1 Sep-12-1996 BSP 125 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 72 K/W Therminal resistance, junction-soldering point 1) RthJS ? 12 DIN humidity category, DIN 40 040 E IEC clim

5.9. bsp123.pdf Size:107K _infineon

BSP122
BSP122
BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 123 100 V 0.38 A 6 ? SOT-223 BSP 123 Type Ordering Code Tape and Reel Information BSP 123 Q67000-S306 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Drain-gate voltage DGR RGS = 20 k? 100 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 29 ?C 0.38 DC drain current, pulsed IDpuls TA = 25 ?C 0.68 Power dissipation Ptot W TA = 25 ?C 1.7 Data Sheet 1 05.99 BSP 123 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 72 K/W Therminal resistance, junction-soldering point 1) RthJS ? 12 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC

5.10. bsp129.pdf Size:305K _infineon

BSP122
BSP122
BSP 129 SIPMOS? Small-Signal Transistor VDS 240 V ID 0.2 A RDS(on) 20 ? N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Tape and Reel Information Pin Configuration Marking Package Code 1 2 3 4 BSP 129 Q67000-S073 E6327: 1000 pcs/reel G D S D BSP 129 SOT-223 BSP 129 Q67000-S314 E7941: 1000 pcs/reel VGS(th) selected in groups: (see page 3) Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 240 V Drain-gate voltage, RGS = 20 k? VDGR 240 Gate-source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1 Continuous drain current, TA = 34 ?C ID 0.2 A Pulsed drain current, TA = 25 ?C ID puls 0.6 Max. power dissipation, TA = 25 ?C Ptot 1.7 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ?C 1) Thermal resistance chip-ambient RthJA 72 K/W chip-soldering point RthJS 12 DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) Transis

See also transistors datasheet: BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 , BSP110 , 2SK3568 , BSP126 , BSP130 , BSP220 , BSP225 , BSP230 , BSP250 , BSP89 , BSS138BK .

Keywords

 BSP122 Datasheet  BSP122 Datenblatt  BSP122 RoHS  BSP122 Distributor
 BSP122 Application Notes  BSP122 Component  BSP122 Circuit  BSP122 Schematic
 BSP122 Equivalent  BSP122 Cross Reference  BSP122 Data Sheet  BSP122 Fiche Technique

 

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