MOSFET Datasheet



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BSP122
  BSP122
  BSP122
 
BSP122
  BSP122
  BSP122
 
BSP122
  BSP122
 
 
List
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
BSP122 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BSP122 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BSP122

Type of BSP122 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.5

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.55

Maximum junction temperature (Tj), °C:

Rise Time of BSP122 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.5

Package: SC73

Equivalent transistors for BSP122 - Cross-Reference Search

BSP122 PDF doc:

1.1. bsp122.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP122 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 200 V • High-speed switching ID DC drain current 550 mA • No secondary breakdown. RDS(on) drain-source on-resistance 2.5 ? VGS(th) gate-source threshold voltage 2 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in 4 d handbook, halfpage telephone sets and for applications in relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s Top view MAM054 PIN DESCRIPTION 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 drain LIMITING

5.1. bsp121.pdf Size:75K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source voltage VDS max. 200 V vertical D-MOS transistor in a Gate-source voltage (open drain) ±VGSO max. 20 V miniature SOT223 envelope and Drain current (DC) ID max. 350 mA designed for use as a line current Total power dissipation up to interrupter in telephone sets and for application in relay, high-speed and Tamb =25°CPtot max. 1.5 W line-transformer drivers. Drain-source on-resistance typ. 4.5 ? ID = 400 mA; VGS = 10 V RDS(on) max. 6.0 ? FEATURES • Direct interface to C-MOS, TTL, Transfer admittance min. 200 mS etc. ID = 400 mA; VDS = 25 V ? Yfs ? typ. 350 mS • High-speed switchi

5.2. bsp126.pdf Size:75K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA miniature SOT223 envelope and Total power dissipation up to Tamb =25 °C Ptot max. 1.5 W designed for use as a line interrupter Drain-source on-resistance in telephone sets and for application typ. 5.0 ? in relay, high-speed and ID = 300 mA; VGS = 10 V RDS(on) max. 7.0 ? line-transformer drivers. Gate-source threshold voltage VGS(th) max. 2 V FEATURES • Direct interface to C-MOS, TTL, PINNING - SOT223 etc. 1 = gate • High-speed switching. 2 = drain • No secondary breakdown. 3 = source 4 = drain Marking code BSP126 PIN

5.3. bsp128.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP128 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 200 V • High-speed switching ID DC drain current 350 mA • No secondary breakdown. RDS(on) drain-source on-resistance 8 ? VGS(th) gate-source threshold voltage 1.8 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in 4 d handbook, halfpage relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s PIN DESCRIPTION Top view MAM054 Code: BSP128 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 dr

5.4. bsp120.pdf Size:65K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP120 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 200 V vertical D-MOS transistor in a Drain-current (DC) ID max. 250 mA miniature SOT223 envelope and Drain-source ON-resistance designed for use as a line current typ. 7 ? ID = 250 mA; VGS = 10 V RDS(on) interrupter in telephone sets and for max. 12 ? application in relay, high-speed and line-transformer drivers. Gate threshold voltage VGS(th) max. 2.8 V FEATURES PINNING - SOT223 • Direct interface to C-MOS, TTL, 1 = gate etc. 2 = drain • High-speed switching 3 = source • No secondary breakdown 4 = drain Marking code BSP120 PIN CONFIGURATION 4 d handbook, halfpage g 1 2 3 s Top view

5.5. bsp127.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP127 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP127 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 270 V • High-speed switching ID DC drain current 350 mA • No secondary breakdown. RDS(on) drain-source on-resistance 8 ? VGS(th) gate-source threshold voltage 2 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in 4 d handbook, halfpage telephone sets and for applications in relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s PIN DESCRIPTION Top view MAM054 Code: BSP127 1 gate 2 drain Fig.1 Simplified outline (SOT223) and symbol. 3 source 4 dra

5.6. bsp126_cnv_2.pdf Size:65K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA miniature SOT223 envelope and Total power dissipation up to Tamb =25 °C Ptot max. 1.5 W designed for use as a line interrupter Drain-source on-resistance in telephone sets and for application typ. 5.0 ? in relay, high-speed and ID = 300 mA; VGS = 10 V RDS(on) max. 7.0 ? line-transformer drivers. Gate-source threshold voltage VGS(th) max. 2 V FEATURES • Direct interface to C-MOS, TTL, PINNING - SOT223 etc. 1 = gate • High-speed switching. 2 = drain • No secondary breakdown. 3 = source 4 = drain Marking code BSP126 PIN

5.7. bsp121_cnv_3.pdf Size:64K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source voltage VDS max. 200 V vertical D-MOS transistor in a Gate-source voltage (open drain) ±VGSO max. 20 V miniature SOT223 envelope and Drain current (DC) ID max. 350 mA designed for use as a line current Total power dissipation up to interrupter in telephone sets and for application in relay, high-speed and Tamb =25°CPtot max. 1.5 W line-transformer drivers. Drain-source on-resistance typ. 4.5 ? ID = 400 mA; VGS = 10 V RDS(on) max. 6.0 ? FEATURES • Direct interface to C-MOS, TTL, Transfer admittance min. 200 mS etc. ID = 400 mA; VDS = 25 V ? Yfs ? typ. 350 mS • High-speed switchi

5.8. bsp125.pdf Size:175K _siemens

BSP122
BSP122
BSP 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 125 600 V 0.12 A 45 ? SOT-223 BSP 125 Type Ordering Code Tape and Reel Information BSP 125 Q62702-S654 E6327 BSP 125 Q67000-S284 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 600 V VDGR Drain-gate voltage RGS = 20 k? 600 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID A TA = 39 °C 0.12 DC drain current, pulsed IDpuls TA = 25 °C 0.48 Power dissipation Ptot W TA = 25 °C 1.7 Semiconductor Group 1 Sep-12-1996 BSP 125 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 72 K/W Therminal resistance, junction-soldering point 1) RthJS ? 12 DIN humidity category, DIN 40 040 E IEC clim

5.9. bsp123.pdf Size:107K _infineon

BSP122
BSP122
BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 123 100 V 0.38 A 6 ? SOT-223 BSP 123 Type Ordering Code Tape and Reel Information BSP 123 Q67000-S306 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Drain-gate voltage DGR RGS = 20 k? 100 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 29 ?C 0.38 DC drain current, pulsed IDpuls TA = 25 ?C 0.68 Power dissipation Ptot W TA = 25 ?C 1.7 Data Sheet 1 05.99 BSP 123 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 72 K/W Therminal resistance, junction-soldering point 1) RthJS ? 12 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC

5.10. bsp129.pdf Size:305K _infineon

BSP122
BSP122
BSP 129 SIPMOS? Small-Signal Transistor VDS 240 V ID 0.2 A RDS(on) 20 ? N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Tape and Reel Information Pin Configuration Marking Package Code 1 2 3 4 BSP 129 Q67000-S073 E6327: 1000 pcs/reel G D S D BSP 129 SOT-223 BSP 129 Q67000-S314 E7941: 1000 pcs/reel VGS(th) selected in groups: (see page 3) Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 240 V Drain-gate voltage, RGS = 20 k? VDGR 240 Gate-source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1 Continuous drain current, TA = 34 ?C ID 0.2 A Pulsed drain current, TA = 25 ?C ID puls 0.6 Max. power dissipation, TA = 25 ?C Ptot 1.7 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ?C 1) Thermal resistance chip-ambient RthJA 72 K/W chip-soldering point RthJS 12 DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) Transis

See also transistors datasheet: BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 , BSP110 , 2SK3568 , BSP126 , BSP130 , BSP220 , BSP225 , BSP230 , BSP250 , BSP89 , BSS138BK .

Keywords

 BSP122 Datasheet  BSP122 Datenblatt  BSP122 RoHS  BSP122 Distributor
 BSP122 Application Notes  BSP122 Component  BSP122 Circuit  BSP122 Schematic
 BSP122 Equivalent  BSP122 Cross Reference  BSP122 Data Sheet  BSP122 Fiche Technique

 

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