MOSFET Datasheet


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BSP122
  BSP122
  BSP122
 
BSP122
  BSP122
  BSP122
 
BSP122
  BSP122
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP3055A
MTP3055AFI ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF130JAA-S
SDF130JAA-U ..SFU9024
SFU9034 ..SMK0270F
SMK0460F ..SML601R3BN
SML601R3CN ..SPP02N60C3
SPP02N60S5 ..SSG9435
SSG9435BDY ..SSM3K48FU
SSM3K7002AF ..SSS1N50A
SSS1N60A ..STD12N05L
STD12N05L-1 ..STE250NS10
STE26N50 ..STI55NF03L
STI6N62K3 ..STP200NF04
STP200NF04L ..STP6N60FI
STP6N62K3 ..STV60N05
STV60N05-16 ..TK11A60D
TK11A65D ..TPC6105
TPC6106 ..TPCA8121
TPCA8128 ..UT3401
UT3401Z ..ZVN0120A
ZVN0124A ..ZXMS6002G
ZXMS6003G ..ZXMS6006SG
 
BSP122 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BSP122 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BSP122

Type of BSP122 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.5

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.55

Maximum junction temperature (Tj), °C:

Rise Time of BSP122 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.5

Package: SC73

Equivalent transistors for BSP122

BSP122 PDF doc:

1.1. bsp122.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP122 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 200 V • High-speed switching ID DC drain current 550 mA • No secondary breakdown. RDS(on) drain-source on-resistance 2.5 ? VGS(th) gate-source threshold voltage 2 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in 4 d handbook, halfpage telephone sets and for applications in relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s Top view MAM054 PIN DESCRIPTION 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 drain LIMITING

5.1. bsp121.pdf Size:75K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source voltage VDS max. 200 V vertical D-MOS transistor in a Gate-source voltage (open drain) ±VGSO max. 20 V miniature SOT223 envelope and Drain current (DC) ID max. 350 mA designed for use as a line current Total power dissipation up to interrupter in telephone sets and for application in relay, high-speed and Tamb =25°CPtot max. 1.5 W line-transformer drivers. Drain-source on-resistance typ. 4.5 ? ID = 400 mA; VGS = 10 V RDS(on) max. 6.0 ? FEATURES • Direct interface to C-MOS, TTL, Transfer admittance min. 200 mS etc. ID = 400 mA; VDS = 25 V ? Yfs ? typ. 350 mS • High-speed switchi

5.2. bsp121_cnv_3.pdf Size:64K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source voltage VDS max. 200 V vertical D-MOS transistor in a Gate-source voltage (open drain) ±VGSO max. 20 V miniature SOT223 envelope and Drain current (DC) ID max. 350 mA designed for use as a line current Total power dissipation up to interrupter in telephone sets and for application in relay, high-speed and Tamb =25°CPtot max. 1.5 W line-transformer drivers. Drain-source on-resistance typ. 4.5 ? ID = 400 mA; VGS = 10 V RDS(on) max. 6.0 ? FEATURES • Direct interface to C-MOS, TTL, Transfer admittance min. 200 mS etc. ID = 400 mA; VDS = 25 V ? Yfs ? typ. 350 mS • High-speed switchi

5.3. bsp120.pdf Size:65K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP120 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 200 V vertical D-MOS transistor in a Drain-current (DC) ID max. 250 mA miniature SOT223 envelope and Drain-source ON-resistance designed for use as a line current typ. 7 ? ID = 250 mA; VGS = 10 V RDS(on) interrupter in telephone sets and for max. 12 ? application in relay, high-speed and line-transformer drivers. Gate threshold voltage VGS(th) max. 2.8 V FEATURES PINNING - SOT223 • Direct interface to C-MOS, TTL, 1 = gate etc. 2 = drain • High-speed switching 3 = source • No secondary breakdown 4 = drain Marking code BSP120 PIN CONFIGURATION 4 d handbook, halfpage g 1 2 3 s Top view

5.4. bsp127.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP127 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP127 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 270 V • High-speed switching ID DC drain current 350 mA • No secondary breakdown. RDS(on) drain-source on-resistance 8 ? VGS(th) gate-source threshold voltage 2 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in 4 d handbook, halfpage telephone sets and for applications in relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s PIN DESCRIPTION Top view MAM054 Code: BSP127 1 gate 2 drain Fig.1 Simplified outline (SOT223) and symbol. 3 source 4 dra

5.5. bsp126_cnv_2.pdf Size:65K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA miniature SOT223 envelope and Total power dissipation up to Tamb =25 °C Ptot max. 1.5 W designed for use as a line interrupter Drain-source on-resistance in telephone sets and for application typ. 5.0 ? in relay, high-speed and ID = 300 mA; VGS = 10 V RDS(on) max. 7.0 ? line-transformer drivers. Gate-source threshold voltage VGS(th) max. 2 V FEATURES • Direct interface to C-MOS, TTL, PINNING - SOT223 etc. 1 = gate • High-speed switching. 2 = drain • No secondary breakdown. 3 = source 4 = drain Marking code BSP126 PIN

5.6. bsp128.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP128 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 200 V • High-speed switching ID DC drain current 350 mA • No secondary breakdown. RDS(on) drain-source on-resistance 8 ? VGS(th) gate-source threshold voltage 1.8 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in 4 d handbook, halfpage relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s PIN DESCRIPTION Top view MAM054 Code: BSP128 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 dr

5.7. bsp126.pdf Size:75K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA miniature SOT223 envelope and Total power dissipation up to Tamb =25 °C Ptot max. 1.5 W designed for use as a line interrupter Drain-source on-resistance in telephone sets and for application typ. 5.0 ? in relay, high-speed and ID = 300 mA; VGS = 10 V RDS(on) max. 7.0 ? line-transformer drivers. Gate-source threshold voltage VGS(th) max. 2 V FEATURES • Direct interface to C-MOS, TTL, PINNING - SOT223 etc. 1 = gate • High-speed switching. 2 = drain • No secondary breakdown. 3 = source 4 = drain Marking code BSP126 PIN

5.8. bsp125.pdf Size:175K _siemens

BSP122
BSP122
BSP 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 125 600 V 0.12 A 45 ? SOT-223 BSP 125 Type Ordering Code Tape and Reel Information BSP 125 Q62702-S654 E6327 BSP 125 Q67000-S284 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 600 V VDGR Drain-gate voltage RGS = 20 k? 600 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID A TA = 39 °C 0.12 DC drain current, pulsed IDpuls TA = 25 °C 0.48 Power dissipation Ptot W TA = 25 °C 1.7 Semiconductor Group 1 Sep-12-1996 BSP 125 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 72 K/W Therminal resistance, junction-soldering point 1) RthJS ? 12 DIN humidity category, DIN 40 040 E IEC clim

5.9. bsp123.pdf Size:107K _infineon

BSP122
BSP122
BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 123 100 V 0.38 A 6 ? SOT-223 BSP 123 Type Ordering Code Tape and Reel Information BSP 123 Q67000-S306 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Drain-gate voltage DGR RGS = 20 k? 100 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 29 ?C 0.38 DC drain current, pulsed IDpuls TA = 25 ?C 0.68 Power dissipation Ptot W TA = 25 ?C 1.7 Data Sheet 1 05.99 BSP 123 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 72 K/W Therminal resistance, junction-soldering point 1) RthJS ? 12 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC

5.10. bsp129.pdf Size:305K _infineon

BSP122
BSP122
BSP 129 SIPMOS? Small-Signal Transistor VDS 240 V ID 0.2 A RDS(on) 20 ? N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Tape and Reel Information Pin Configuration Marking Package Code 1 2 3 4 BSP 129 Q67000-S073 E6327: 1000 pcs/reel G D S D BSP 129 SOT-223 BSP 129 Q67000-S314 E7941: 1000 pcs/reel VGS(th) selected in groups: (see page 3) Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 240 V Drain-gate voltage, RGS = 20 k? VDGR 240 Gate-source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1 Continuous drain current, TA = 34 ?C ID 0.2 A Pulsed drain current, TA = 25 ?C ID puls 0.6 Max. power dissipation, TA = 25 ?C Ptot 1.7 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ?C 1) Thermal resistance chip-ambient RthJA 72 K/W chip-soldering point RthJS 12 DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) Transis

See also transistors datasheet: BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 , BSP110 , 2SK3568 , BSP126 , BSP130 , BSP220 , BSP225 , BSP230 , BSP250 , BSP89 , BSS138BK .

Keywords

 BSP122 Datasheet  BSP122 Datenblatt  BSP122 RoHS  BSP122 Distributor
 BSP122 Application Notes  BSP122 Component  BSP122 Circuit  BSP122 Schematic
 BSP122 Equivalent  BSP122 Cross Reference  BSP122 Data Sheet  BSP122 Fiche Technique

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