MOSFET Datasheet


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BSP122
  BSP122
  BSP122
 
BSP122
  BSP122
  BSP122
 
BSP122
  BSP122
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRFP4310Z
AUIRFP4368 ..BF545A
BF545B ..BLF6G27L-50BN
BLF6G27LS-100 ..BSC109N10NS3G
BSC110N06NS3G ..BSZ105N04NSG
BSZ110N06NS3G ..BUK7515-100A
BUK75150-55A ..BUK9614-30
BUK9614-55 ..C2T225
C2T225A ..CEF14P20
CEF15P15 ..CEP83A3G
CEP840A ..DMG6968UDM
DMG6968UTS ..ECH8674
ECH8675 ..FDB52N20
FDB52N20 ..FDD7N25LZ
FDD8424H ..FDMC86102L
FDMC86102LZ ..FDP150N10A_F102
FDP150N10A_F102 ..FDS5680
FDS5690 ..FK10VS-9
FK14KM-10 ..FQD4N20
FQD4N25 ..FQS4901
FQS4901 ..FRX130D2
FRX130D3 ..H5N2505DL
H5N2505DS ..HAT2092R
HAT2093R ..HUF75337S3S
HUF75339G3 ..IPB038N12N3G
IPB039N04LG ..IPD26N06S2L-35
IPD30N03S2L-07 ..IPI80P03P4L-07
IPI90N04S4-02 ..IPS12CN10LG
IPS135N03LG ..IRF3205Z
IRF3205ZL ..IRF6620
IRF6621 ..IRF7494
IRF7495 ..IRF9633
IRF9640 ..IRFH5301
IRFH5302 ..IRFP233
IRFP240 ..IRFR4615
IRFR4620 ..IRFS9230
IRFS9231 ..IRFY120
IRFY120C ..IRLHS2242
IRLHS6242 ..IRLWZ44A
IRLZ10 ..IXFH24N50Q
IXFH24N80P ..IXFL34N100
IXFL36N110P ..IXFR18N90P
IXFR200N10P ..IXFX20N120P
IXFX21N100F ..IXTA60N20T
IXTA62N15P ..IXTH60N25
IXTH67N08MA ..IXTP2N80
IXTP2N80P ..IXTT50P10
IXTT52N30P ..KF3N50DZ
KF3N50FS ..KP103L
KP103M ..MCH6336
MCH6337 ..MTB90P06Q8
MTBA0N10Q8 ..MTN3418S3
MTN3434G6 ..NDB5060L
NDB508A ..NTD4863N
NTD4865N ..NTZD3155C
NTZD5110N ..PMBF4392
PMBF4393 ..PSMN3R0-60PS
PSMN3R2-25YLC ..RFD16N03L
RFD16N03LSM ..RJK0659DPA
RJK0660DPA ..RRH140P03
RRL025P03 ..SDF240
SDF24N50GAF ..SGM2305A
SGM2306A ..SMK1060P
SMK1080FD ..SML60B25
SML60C12 ..SPP15P10PLH
SPP16N50C3 ..SSH40N20
SSH40N20A ..SSM6J215FE
SSM6J21TU ..SST309
SST310 ..STD16NF25
STD17N05 ..STF11N52K3
STF11N65K3 ..STK23N05L
STK23N06L ..STP22NM60N
STP22NS25Z ..STP7NA40FI
STP7NA60 ..STW15N50
STW15NA50 ..TK13P25D
TK14A45D ..TPC8027
TPC8028 ..TPCC8076
TPCC8084 ..UT4446
UT45N03 ..ZVN4306G
ZVN4306GV ..ZXMS6006SG
 
BSP122 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BSP122 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BSP122

Type of BSP122 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.5

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.55

Maximum junction temperature (Tj), °C:

Rise Time of BSP122 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.5

Package: SC73

Equivalent transistors for BSP122

BSP122 PDF doc:

1.1. bsp122.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP122 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 200 V • High-speed switching ID DC drain current 550 mA • No secondary breakdown. RDS(on) drain-source on-resistance 2.5 ? VGS(th) gate-source threshold voltage 2 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in 4 d handbook, halfpage telephone sets and for applications in relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s Top view MAM054 PIN DESCRIPTION 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 drain LIMITING

5.1. bsp121.pdf Size:75K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source voltage VDS max. 200 V vertical D-MOS transistor in a Gate-source voltage (open drain) ±VGSO max. 20 V miniature SOT223 envelope and Drain current (DC) ID max. 350 mA designed for use as a line current Total power dissipation up to interrupter in telephone sets and for application in relay, high-speed and Tamb =25°CPtot max. 1.5 W line-transformer drivers. Drain-source on-resistance typ. 4.5 ? ID = 400 mA; VGS = 10 V RDS(on) max. 6.0 ? FEATURES • Direct interface to C-MOS, TTL, Transfer admittance min. 200 mS etc. ID = 400 mA; VDS = 25 V ? Yfs ? typ. 350 mS • High-speed switchi

5.2. bsp121_cnv_3.pdf Size:64K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source voltage VDS max. 200 V vertical D-MOS transistor in a Gate-source voltage (open drain) ±VGSO max. 20 V miniature SOT223 envelope and Drain current (DC) ID max. 350 mA designed for use as a line current Total power dissipation up to interrupter in telephone sets and for application in relay, high-speed and Tamb =25°CPtot max. 1.5 W line-transformer drivers. Drain-source on-resistance typ. 4.5 ? ID = 400 mA; VGS = 10 V RDS(on) max. 6.0 ? FEATURES • Direct interface to C-MOS, TTL, Transfer admittance min. 200 mS etc. ID = 400 mA; VDS = 25 V ? Yfs ? typ. 350 mS • High-speed switchi

5.3. bsp120.pdf Size:65K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP120 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 200 V vertical D-MOS transistor in a Drain-current (DC) ID max. 250 mA miniature SOT223 envelope and Drain-source ON-resistance designed for use as a line current typ. 7 ? ID = 250 mA; VGS = 10 V RDS(on) interrupter in telephone sets and for max. 12 ? application in relay, high-speed and line-transformer drivers. Gate threshold voltage VGS(th) max. 2.8 V FEATURES PINNING - SOT223 • Direct interface to C-MOS, TTL, 1 = gate etc. 2 = drain • High-speed switching 3 = source • No secondary breakdown 4 = drain Marking code BSP120 PIN CONFIGURATION 4 d handbook, halfpage g 1 2 3 s Top view

5.4. bsp127.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP127 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP127 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 270 V • High-speed switching ID DC drain current 350 mA • No secondary breakdown. RDS(on) drain-source on-resistance 8 ? VGS(th) gate-source threshold voltage 2 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in 4 d handbook, halfpage telephone sets and for applications in relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s PIN DESCRIPTION Top view MAM054 Code: BSP127 1 gate 2 drain Fig.1 Simplified outline (SOT223) and symbol. 3 source 4 dra

5.5. bsp126_cnv_2.pdf Size:65K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA miniature SOT223 envelope and Total power dissipation up to Tamb =25 °C Ptot max. 1.5 W designed for use as a line interrupter Drain-source on-resistance in telephone sets and for application typ. 5.0 ? in relay, high-speed and ID = 300 mA; VGS = 10 V RDS(on) max. 7.0 ? line-transformer drivers. Gate-source threshold voltage VGS(th) max. 2 V FEATURES • Direct interface to C-MOS, TTL, PINNING - SOT223 etc. 1 = gate • High-speed switching. 2 = drain • No secondary breakdown. 3 = source 4 = drain Marking code BSP126 PIN

5.6. bsp128.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP128 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 200 V • High-speed switching ID DC drain current 350 mA • No secondary breakdown. RDS(on) drain-source on-resistance 8 ? VGS(th) gate-source threshold voltage 1.8 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in 4 d handbook, halfpage relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s PIN DESCRIPTION Top view MAM054 Code: BSP128 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 dr

5.7. bsp126.pdf Size:75K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA miniature SOT223 envelope and Total power dissipation up to Tamb =25 °C Ptot max. 1.5 W designed for use as a line interrupter Drain-source on-resistance in telephone sets and for application typ. 5.0 ? in relay, high-speed and ID = 300 mA; VGS = 10 V RDS(on) max. 7.0 ? line-transformer drivers. Gate-source threshold voltage VGS(th) max. 2 V FEATURES • Direct interface to C-MOS, TTL, PINNING - SOT223 etc. 1 = gate • High-speed switching. 2 = drain • No secondary breakdown. 3 = source 4 = drain Marking code BSP126 PIN

5.8. bsp125.pdf Size:175K _siemens

BSP122
BSP122
BSP 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 125 600 V 0.12 A 45 ? SOT-223 BSP 125 Type Ordering Code Tape and Reel Information BSP 125 Q62702-S654 E6327 BSP 125 Q67000-S284 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 600 V VDGR Drain-gate voltage RGS = 20 k? 600 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID A TA = 39 °C 0.12 DC drain current, pulsed IDpuls TA = 25 °C 0.48 Power dissipation Ptot W TA = 25 °C 1.7 Semiconductor Group 1 Sep-12-1996 BSP 125 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 72 K/W Therminal resistance, junction-soldering point 1) RthJS ? 12 DIN humidity category, DIN 40 040 E IEC clim

5.9. bsp123.pdf Size:107K _infineon

BSP122
BSP122
BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 123 100 V 0.38 A 6 ? SOT-223 BSP 123 Type Ordering Code Tape and Reel Information BSP 123 Q67000-S306 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Drain-gate voltage DGR RGS = 20 k? 100 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 29 ?C 0.38 DC drain current, pulsed IDpuls TA = 25 ?C 0.68 Power dissipation Ptot W TA = 25 ?C 1.7 Data Sheet 1 05.99 BSP 123 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 72 K/W Therminal resistance, junction-soldering point 1) RthJS ? 12 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC

5.10. bsp129.pdf Size:305K _infineon

BSP122
BSP122
BSP 129 SIPMOS? Small-Signal Transistor VDS 240 V ID 0.2 A RDS(on) 20 ? N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Tape and Reel Information Pin Configuration Marking Package Code 1 2 3 4 BSP 129 Q67000-S073 E6327: 1000 pcs/reel G D S D BSP 129 SOT-223 BSP 129 Q67000-S314 E7941: 1000 pcs/reel VGS(th) selected in groups: (see page 3) Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 240 V Drain-gate voltage, RGS = 20 k? VDGR 240 Gate-source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1 Continuous drain current, TA = 34 ?C ID 0.2 A Pulsed drain current, TA = 25 ?C ID puls 0.6 Max. power dissipation, TA = 25 ?C Ptot 1.7 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ?C 1) Thermal resistance chip-ambient RthJA 72 K/W chip-soldering point RthJS 12 DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) Transis

See also transistors datasheet: BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 , BSP110 , 2SK3568 , BSP126 , BSP130 , BSP220 , BSP225 , BSP230 , BSP250 , BSP89 , BSS138BK .

Keywords

 BSP122 Datasheet  BSP122 Datenblatt  BSP122 RoHS  BSP122 Distributor
 BSP122 Application Notes  BSP122 Component  BSP122 Circuit  BSP122 Schematic
 BSP122 Equivalent  BSP122 Cross Reference  BSP122 Data Sheet  BSP122 Fiche Technique

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