MOSFET Datasheet


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BSP122
  BSP122
  BSP122
 
BSP122
  BSP122
  BSP122
 
BSP122
  BSP122
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP18T10GH-HF
AP18T10GI ..AP4036AGYT-HF
AP4085I ..AP55T06GS-HF
AP55T10GH-HF ..AP9450GYT-HF
AP9451GG-HF ..AP9970GK-HF
AP9970GP-HF ..APT40M35PVR
APT40M42JN ..AUIRFB3206
AUIRFB3207 ..BF1208
BF1208D ..BLF6G15L-500H
BLF6G15LS-500H ..BSC052N03LS
BSC052N03SG ..BSS84L
BSS84LT1 ..BUK7215-55A
BUK72150-55A ..BUK9520-55
BUK9520-55A ..BUZ902DP
BUZ902P ..CEDF634
CEDF640 ..CEP3100
CEP3120 ..DMC4028SSD
DMC4040SSD ..EC3A04B
EC4401C ..FDB120N10
FDB12N50F ..FDD5N50
FDD5N50F ..FDMC7660
FDMC7660 ..FDP025N06
FDP030N06 ..FDS3992
FDS3992 ..FDV305N
FDY1002PZ ..FQD12P10TM_F085
FQD13N06 ..FQPF5N40
FQPF5N40 ..FRS140D
FRS140H ..H12N65F
H2301N ..HAT2033R
HAT2036R ..HUF75307D3
HUF75307D3S ..IPA65R600E6
IPA65R660CFD ..IPD068P03L3G
IPD075N03LG ..IPI60R385CP
IPI60R520CP ..IPP80N06S2-09
IPP80N06S2-H5 ..IRF1607
IRF1902 ..IRF635
IRF636A ..IRF7416Q
IRF741FI ..IRF9520N
IRF9520NL ..IRFF310
IRFF320 ..IRFP044
IRFP044N ..IRFR224A
IRFR2307Z ..IRFS721
IRFS722 ..IRFU9120N
IRFU9121 ..IRL630S
IRL631 ..IRLU2908
IRLU3103 ..IXFH150N17T
IXFH150N17T2 ..IXFK48N60Q3
IXFK50N50 ..IXFP4N100P
IXFP4N100PM ..IXFV26N60P
IXFV26N60PS ..IXTA26P20P
IXTA28P065T ..IXTH36P10
IXTH36P15P ..IXTP180N085T
IXTP180N10T ..IXTT100N25P
IXTT10N100D ..JANSR2N7402
JANSR2N7403 ..KMB6D0DN30QA
KMB6D0DN30QB ..KU2307K
KU2307Q ..MTB30N06J3
MTB30N06Q8 ..MTN2328N3
MTN2342N3 ..MTP4835V8
MTP50P03HDL ..NTB5605P
NTB60N06 ..NTP6413AN
NTR0202PL ..PHP7N60E
PHP80N06LT ..PSMN102-200Y
PSMN130-200D ..RF1S30P05SM
RF1S30P06SM ..RJK03C0DPA
RJK03C1DPB ..RQJ0303PGDQA
RQJ0304DQDQA ..SDF120JAB-U
SDF120JDA-D ..SFT1423
SFT1431 ..SMG5409
SMK0160 ..SML50L47
SML50M60BFN ..SPI15N60C3
SPI15N60CFD ..SSG4940N
SSG4940NC ..SSM3K36FS
SSM3K36MFV ..SSR3055A
SSR3055LA ..STD10NM60ND
STD10NM65N ..STE150N10
STE15N100 ..STI24NM65N
STI26NM60N ..STP19N06
STP19N06FI ..STP60NS04ZB
STP62NS04Z ..STV4NA60
STV4NA80 ..TK100F06K3
TK10A50D ..TPC6008-H
TPC6009-H ..TPCA8102
TPCA8103 ..UT2N10
UT3006 ..WTU1333
WTX1012 ..ZXMP6A17E6
ZXMP6A17G ..ZXMS6006SG
 
BSP122 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BSP122 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BSP122

Type of BSP122 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.5

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.55

Maximum junction temperature (Tj), °C:

Rise Time of BSP122 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.5

Package: SC73

Equivalent transistors for BSP122

BSP122 PDF doc:

1.1. bsp122.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP122 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 200 V • High-speed switching ID DC drain current 550 mA • No secondary breakdown. RDS(on) drain-source on-resistance 2.5 ? VGS(th) gate-source threshold voltage 2 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in 4 d handbook, halfpage telephone sets and for applications in relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s Top view MAM054 PIN DESCRIPTION 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 drain LIMITING

5.1. bsp121.pdf Size:75K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source voltage VDS max. 200 V vertical D-MOS transistor in a Gate-source voltage (open drain) ±VGSO max. 20 V miniature SOT223 envelope and Drain current (DC) ID max. 350 mA designed for use as a line current Total power dissipation up to interrupter in telephone sets and for application in relay, high-speed and Tamb =25°CPtot max. 1.5 W line-transformer drivers. Drain-source on-resistance typ. 4.5 ? ID = 400 mA; VGS = 10 V RDS(on) max. 6.0 ? FEATURES • Direct interface to C-MOS, TTL, Transfer admittance min. 200 mS etc. ID = 400 mA; VDS = 25 V ? Yfs ? typ. 350 mS • High-speed switchi

5.2. bsp121_cnv_3.pdf Size:64K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source voltage VDS max. 200 V vertical D-MOS transistor in a Gate-source voltage (open drain) ±VGSO max. 20 V miniature SOT223 envelope and Drain current (DC) ID max. 350 mA designed for use as a line current Total power dissipation up to interrupter in telephone sets and for application in relay, high-speed and Tamb =25°CPtot max. 1.5 W line-transformer drivers. Drain-source on-resistance typ. 4.5 ? ID = 400 mA; VGS = 10 V RDS(on) max. 6.0 ? FEATURES • Direct interface to C-MOS, TTL, Transfer admittance min. 200 mS etc. ID = 400 mA; VDS = 25 V ? Yfs ? typ. 350 mS • High-speed switchi

5.3. bsp120.pdf Size:65K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP120 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 200 V vertical D-MOS transistor in a Drain-current (DC) ID max. 250 mA miniature SOT223 envelope and Drain-source ON-resistance designed for use as a line current typ. 7 ? ID = 250 mA; VGS = 10 V RDS(on) interrupter in telephone sets and for max. 12 ? application in relay, high-speed and line-transformer drivers. Gate threshold voltage VGS(th) max. 2.8 V FEATURES PINNING - SOT223 • Direct interface to C-MOS, TTL, 1 = gate etc. 2 = drain • High-speed switching 3 = source • No secondary breakdown 4 = drain Marking code BSP120 PIN CONFIGURATION 4 d handbook, halfpage g 1 2 3 s Top view

5.4. bsp127.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP127 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP127 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 270 V • High-speed switching ID DC drain current 350 mA • No secondary breakdown. RDS(on) drain-source on-resistance 8 ? VGS(th) gate-source threshold voltage 2 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in 4 d handbook, halfpage telephone sets and for applications in relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s PIN DESCRIPTION Top view MAM054 Code: BSP127 1 gate 2 drain Fig.1 Simplified outline (SOT223) and symbol. 3 source 4 dra

5.5. bsp126_cnv_2.pdf Size:65K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA miniature SOT223 envelope and Total power dissipation up to Tamb =25 °C Ptot max. 1.5 W designed for use as a line interrupter Drain-source on-resistance in telephone sets and for application typ. 5.0 ? in relay, high-speed and ID = 300 mA; VGS = 10 V RDS(on) max. 7.0 ? line-transformer drivers. Gate-source threshold voltage VGS(th) max. 2 V FEATURES • Direct interface to C-MOS, TTL, PINNING - SOT223 etc. 1 = gate • High-speed switching. 2 = drain • No secondary breakdown. 3 = source 4 = drain Marking code BSP126 PIN

5.6. bsp128.pdf Size:50K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP128 D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain-source voltage 200 V • High-speed switching ID DC drain current 350 mA • No secondary breakdown. RDS(on) drain-source on-resistance 8 ? VGS(th) gate-source threshold voltage 1.8 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in 4 d handbook, halfpage relay, high-speed and line transformer drivers. g PINNING - SOT223 1 2 3 s PIN DESCRIPTION Top view MAM054 Code: BSP128 1 gate 2 drain 3 source Fig.1 Simplified outline (SOT223) and symbol. 4 dr

5.7. bsp126.pdf Size:75K _philips

BSP122
BSP122
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D-MOS transistor in a Drain current (DC) ID max. 350 mA miniature SOT223 envelope and Total power dissipation up to Tamb =25 °C Ptot max. 1.5 W designed for use as a line interrupter Drain-source on-resistance in telephone sets and for application typ. 5.0 ? in relay, high-speed and ID = 300 mA; VGS = 10 V RDS(on) max. 7.0 ? line-transformer drivers. Gate-source threshold voltage VGS(th) max. 2 V FEATURES • Direct interface to C-MOS, TTL, PINNING - SOT223 etc. 1 = gate • High-speed switching. 2 = drain • No secondary breakdown. 3 = source 4 = drain Marking code BSP126 PIN

5.8. bsp125.pdf Size:175K _siemens

BSP122
BSP122
BSP 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 125 600 V 0.12 A 45 ? SOT-223 BSP 125 Type Ordering Code Tape and Reel Information BSP 125 Q62702-S654 E6327 BSP 125 Q67000-S284 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 600 V VDGR Drain-gate voltage RGS = 20 k? 600 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID A TA = 39 °C 0.12 DC drain current, pulsed IDpuls TA = 25 °C 0.48 Power dissipation Ptot W TA = 25 °C 1.7 Semiconductor Group 1 Sep-12-1996 BSP 125 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 72 K/W Therminal resistance, junction-soldering point 1) RthJS ? 12 DIN humidity category, DIN 40 040 E IEC clim

5.9. bsp123.pdf Size:107K _infineon

BSP122
BSP122
BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 123 100 V 0.38 A 6 ? SOT-223 BSP 123 Type Ordering Code Tape and Reel Information BSP 123 Q67000-S306 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Drain-gate voltage DGR RGS = 20 k? 100 Gate source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Continuous drain current ID A TA = 29 ?C 0.38 DC drain current, pulsed IDpuls TA = 25 ?C 0.68 Power dissipation Ptot W TA = 25 ?C 1.7 Data Sheet 1 05.99 BSP 123 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ?C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ? 72 K/W Therminal resistance, junction-soldering point 1) RthJS ? 12 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC

5.10. bsp129.pdf Size:305K _infineon

BSP122
BSP122
BSP 129 SIPMOS? Small-Signal Transistor VDS 240 V ID 0.2 A RDS(on) 20 ? N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Tape and Reel Information Pin Configuration Marking Package Code 1 2 3 4 BSP 129 Q67000-S073 E6327: 1000 pcs/reel G D S D BSP 129 SOT-223 BSP 129 Q67000-S314 E7941: 1000 pcs/reel VGS(th) selected in groups: (see page 3) Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 240 V Drain-gate voltage, RGS = 20 k? VDGR 240 Gate-source voltage VGS ± 20 ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1 Continuous drain current, TA = 34 ?C ID 0.2 A Pulsed drain current, TA = 25 ?C ID puls 0.6 Max. power dissipation, TA = 25 ?C Ptot 1.7 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ?C 1) Thermal resistance chip-ambient RthJA 72 K/W chip-soldering point RthJS 12 DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 1) Transis

See also transistors datasheet: BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 , BSP110 , 2SK3568 , BSP126 , BSP130 , BSP220 , BSP225 , BSP230 , BSP250 , BSP89 , BSS138BK .

Keywords

 BSP122 Datasheet  BSP122 Datenblatt  BSP122 RoHS  BSP122 Distributor
 BSP122 Application Notes  BSP122 Component  BSP122 Circuit  BSP122 Schematic
 BSP122 Equivalent  BSP122 Cross Reference  BSP122 Data Sheet  BSP122 Fiche Technique

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