BUK6C1R5-40C
MOSFET transistor datasheet. Parameters and characteristics. Type Designator: BUK6C1R5-40C
Type of BUK6C1R5-40C
transistor: MOSFET
Type of control channel: N
-Channel Maximum power dissipation (Pd), W: 300
Maximum drain-source voltage |Uds|, V: 40V
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 319
Maximum junction temperature (Tj), °C:
Rise Time of BUK6C1R5-40C
transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.0014
Package: D2PAK
Equivalent transistors for BUK6C1R5-40C
BUK6C1R5-40C
PDF documents for downloads: PDF unavailable! See also transistors datasheet: BUK662R7-55C
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, BUK6E3R2-55C
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. Keywords| BUK6C1R5-40C
Datasheet | BUK6C1R5-40C
Datenblatt | BUK6C1R5-40C
RoHS | BUK6C1R5-40C
Distributor | | BUK6C1R5-40C
Application Notes | BUK6C1R5-40C
Component | BUK6C1R5-40C
Circuit | BUK6C1R5-40C
Schematic | | BUK6C1R5-40C
Equivalent | BUK6C1R5-40C
Cross Reference | BUK6C1R5-40C
Data Sheet | BUK6C1R5-40C
Fiche Technique |
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