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BUK763R1-40B MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK763R1-40B

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Drain Current |Id|: 75 A

Maximum Drain-Source On-State Resistance (Rds): 0.0031 Ohm

Package: D2PAK

BUK763R1-40B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUK763R1-40B PDF doc:

1.1. buk753r1-40b_buk763r1-40b.pdf Size:323K _philips

BUK763R1-40B
BUK763R1-40B

BUK75/763R1-40B TrenchMOS™ standard level FET Rev. 02 — 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-state resist

3.1. buk753r4-30b_buk763r4-30b.pdf Size:108K _philips

BUK763R1-40B
BUK763R1-40B

BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 — 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 °C rated Standard level compatible

4.1. buk7535_buk7635_55a-01.pdf Size:302K _philips

BUK763R1-40B
BUK763R1-40B

BUK7535-55A; BUK7635-55A TrenchMOS™ standard level FET Rev. 01 — 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology

4.2. buk7635-55_2.pdf Size:55K _philips

BUK763R1-40B
BUK763R1-40B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7635-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 34 A ’trench’ technology the device Ptot T

4.3. buk7535-100a_buk7635-100a.pdf Size:337K _philips

BUK763R1-40B
BUK763R1-40B

BUK7535-100A; BUK7635-100A TrenchMOS™ standard level FET Rev. 01 — 02 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7535-100A in SOT78 (TO-220AB) BUK7635-100A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technolog

4.4. buk7535-55a_buk7635-55a.pdf Size:313K _philips

BUK763R1-40B
BUK763R1-40B

BUK7535-55A; BUK7635-55A TrenchMOS™ standard level FET Rev. 01 — 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology

Datasheet: BUK7624-55A , BUK7626-100B , BUK7628-100A , BUK7628-55A , BUK762R0-40C , BUK762R7-30B , BUK7635-100A , BUK7635-55A , IRFZ48N , BUK763R4-30B , BUK763R6-40C , BUK7640-100A , BUK764R0-55B , BUK764R0-75C , BUK764R3-40B , BUK765R2-40B , BUK7660-100A .

 


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  BUK763R1-40B
  BUK763R1-40B
 

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