View 2sc1846 datasheet:

Power Transistors2SC1846Silicon NPN epitaxial planar typeFor medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0885 3.160.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with2SA0885 TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings Ta = 25C0.750.10.50.1Parameter Symbol Rating Unit 0.50.1 1.760.14.60.22.30.2Collector-base voltage (Emitter open) VCBO 45 V1: EmitterCollector-emitter voltage (Base open) VCEO 35 V1 2 32: Collector3: BaseEmitter-base voltage (Collector open) VEBO 5 VTO-126B-A1 PackageCollector current IC 1 APeak collector current ICP 1.5 ACollector power dissipation PC 1.2 W5.0 *Junction temperature Tj 150 CStorag

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