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View 2sc3941 e datasheet:

2sc3941_e2sc3941_e

Transistor2SC3941Silicon NPN triple diffusion planer typeFor high breakdown voltage general amplificationUnit: mmFor small TV video output5.0 0.2 4.0 0.2Complementary to 2SB1221FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)+0.15 +0.15Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.11.27 1.27Collector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 7 V1:Emitter1 2 32:CollectorPeak collector current ICP 100 mA2.54 0.153:BaseCollector current IC 70 mATO92NL PackageCollector power dissipation PC 1 WJunction temperature Tj 150 CStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitCollec

 

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 2sc3941 e.pdf Design, MOSFET, Power

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