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G20N60B3D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: G20N60B3D

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 165W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Напряжение насыщения коллектор-эмиттер (Ucesat): 2V

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20V

Максимальный постоянный ток коллектора (Ic): 40A

Максимальная температура перехода (Tj): 150

Время нарастания: 25

Емкость коллектора (Cc), pf:

Корпус: TO247

Аналог (замена) для G20N60B3D

G20N60B3D PDF doc:

1.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs Short Circuit Rated and bipolar transistors. The device has the high

2.1. hgtg20n60b3.pdf Size:236K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oC voltage switching devices combining the best features of 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC high input

4.1. hgtg20n60a4d.pdf Size:148K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. This device has the high input impedance of a MOS

4.2. hgt1s20n60c3s_hgtp20n60c3_hgtg20n60c3.pdf Size:140K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . . . . 108n

4.3. hgtg20n60a4_hgtp20n60a4.pdf Size:136K _fairchild_semi

G20N60B3D
G20N60B3D

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated >100kHz Operation at 390V, 20A high voltage switching devices combining the best features 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the 600V Switching SOA Capability high input impedance of a MOSFET a

Другие IGBT... G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , FII50-12E , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , G40N60B3 , G6N40E , G6N40E1D .

 


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Список транзисторов

Обновления

IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |
 

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