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G40N60B3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: G40N60B3

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 290W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Напряжение насыщения коллектор-эмиттер (Ucesat): 2V

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20V

Максимальный постоянный ток коллектора (Ic): 70A

Максимальная температура перехода (Tj): 150

Время нарастания: 47

Емкость коллектора (Cc), pf:

Корпус: TO247

Аналог (замена) для G40N60B3

G40N60B3 PDF doc:

1.1. hgtg40n60b3.pdf Size:138K _fairchild_semi

G40N60B3
G40N60B3

HGTG40N60B3 Data Sheet November 2004 File Number 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150o

1.2. hgtg40n60b3.pdf Size:65K _harris_semi

G40N60B3
G40N60B3

S E M I C O N D U C T O R HGTG40N60B3 PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package JEDEC STYLE TO-247 70A, 600V at TC = +25oC E Square Switching SOA Capability C G Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction Loss Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of

4.1. hgtg40n60a4.pdf Size:160K _fairchild_semi

G40N60B3
G40N60B3

HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40A device combining the best features of a MOSFET and a 200kHz Operation At 390V, 20A bipolar transistor. This device has the high input impedance 600V Switching SOA Capability of a MOSFET and the low on-state co

4.2. ixgh40n60c2d1_ixgt40n60c2d1_ixgg40n60c2d1.pdf Size:162K _ixys

G40N60B3
G40N60B3

HiPerFASTTM IGBT IXGH40N60C2D1 VCES = 600V IXGT40N60C2D1 IC25 = 75A with Diode ? ? IXGJ40N60C2D1 VCE(SAT) ? 2.7V ? ? tfi(typ) = 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C (TAB) C E VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V TO-268 (D3) ( IXGT) VGEM Transient 30 V IC25 TC = 25C (li

Другие IGBT... G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D , SGH80N60UFD , G6N40E , G6N40E1D , G6N50E , G6N50E1D , G7N60C , G7N60C3 , G7N60C3D , G8P50G .

 


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Обновления

IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |
 

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