STGB3NC120HD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: STGB3NC120HD

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 75W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200V

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.2V

Максимально допустимое напряжение эмиттер-затвор (Ueg):

Максимальный постоянный ток коллектора (Ic): 3A

Максимальная температура перехода (Tj):

Время нарастания:

Емкость коллектора (Cc), pf:

Корпус: D2PAK

Аналог (замена) для STGB3NC120HD

STGB3NC120HD - PDF-даташит для загрузки и просмотра...

1.1. stgb3nc120hd_stgf3nc120hd_stgp3nc120hd.pdf Size:750K _st

rward current at TC = 25 �C 3 A Surge non repetitive forward current IFSM 12 A tp=10 ms sinusoidal PTOT Total dissipation at TC = 25 �C 25 75 W Insulation withstand voltage (RMS) from all VISO 2500 V three leads to external heat sink TJ Operating junction temperature -55 to 150 �C 1. Calculated according to the iterative formula: Tj(max) � TC IC(TC) = ------------------------------------------------------------------------------------------------------- Rthj � c ? VCE(sat)(max)(Tj(m

4.1. stgb3nb60sd.pdf Size:339K _st

= 250 �A 2.5 5 V VCE(SAT) Collector-Emitter Saturation VGE = 15 V IC = 1.5 A 1 V 1.5 VGE = 15 V IC = 3 A 1.2 V Voltage VGE = 15 V ID = 3 A Tj = 125 �C 1.1 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VCE = 25 V IC = 3 A 1.7 2.5 S Cies Input Capacitance VCE = 25V f = 1 MHz VGE = 0 255 330 pF Coes Output Capacitance 30 40 pF Cres Reverse Transfer Capacitanc- 5.6 7 pF es QG Total Gate Charge VCE=480V IC=3 A VGE=15 V 18 nC QGE Gate-Emitte

5.1. stgb35n35lz_stgp35n35lz.pdf Size:741K _st

IC (1) Continuous collector current at TC = 25 �C 40 A IC (1) Continuous collector current at TC = 100 �C 30 A ICP (2) Pulsed collector current 80A VGE Gate-emitter voltage VGE (clamped) V PTOT Total dissipation at TC = 25 �C 176 W Single pulse energy EAS 450 mJ (TC=25 �C, L=1.6 mH, IC = 22 A, VCC = 50 V) Human body model (R=1,5 k?, C=100 pF) 8 kV ESD Machine model (R=0, C=100 pF) 800 V Charged device model 2 kV Tstg Storage temperature � 55 to 175 �C Tj Operating junction temperat

5.2. stgb30nc60k_stgp30nc60k.pdf Size:388K _st

�C, RG = 10 ?, VGE = 12 V Tj Operating junction temperature � 55 to 150 �C 1. Calculated according to the iterative formula: TJ(MAX) � Tc Ic(Tc) = ------------------------------------------------------------------------------------- - Rthj � c ? VCE(sat)(MAX) ? (Tc,I ) c 2. Vclamp = 80%,(VCES), Tj =150�C, RG = 10 ?, VGE = 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case

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