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IKW50N60H3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IKW50N60H3

Маркировка: K50H603

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 333W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.85V

Максимально допустимое напряжение эмиттер-затвор (Ueg):

Максимальный постоянный ток коллектора (Ic): 100A

Максимальная температура перехода (Tj):

Время нарастания:

Емкость коллектора (Cc), pf:

Корпус: TO247

Аналог (замена) для IKW50N60H3

IKW50N60H3 PDF doc:

1.1. ikw50n60h3_rev1_1g.pdf Size:1642K _infineon

IKW50N60H3
IKW50N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering very low V CEsat low

1.2. ikw50n60h3.pdf Size:2108K _igbt_a

IKW50N60H3
IKW50N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IKW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering • very low V CEsat

2.1. ikw50n60trev2_4g.pdf Size:412K _infineon

IKW50N60H3
IKW50N60H3

IKW50N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for

2.2. ikw50n60t.pdf Size:593K _igbt_a

IKW50N60H3
IKW50N60H3

IKW50N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : G - Frequency Converters E - Uninterrupted Power Supply  TRENCHSTOP™

Другие IGBT... IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , SKA06N60 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 .

 


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Список транзисторов

Обновления

IGBT: IXYH30N65C3H1 | IXYH30N65C3 | IXYH30N65B3D1 | IXYH30N450HV | IXYH30N170C | IXYH24N90C3D1 | IXYH24N90C3 | IXYH20N65C3 | IXYH20N65B3 | IXYH120N65C3 |
 

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