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IRGP4086 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRGP4086

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 160W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 300V

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.10V

Максимально допустимое напряжение эмиттер-затвор (Ueg):

Максимальный постоянный ток коллектора (Ic): 70A

Максимальная температура перехода (Tj):

Время нарастания:

Емкость коллектора (Cc), pf:

Корпус: TO247

Аналог (замена) для IRGP4086

IRGP4086 PDF doc:

5.1. irgp450ud2.pdf Size:41K _international_rectifier

IRGP4086
IRGP4086

Preliminary Data Sheet PD - 9.1065 IRGP450UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.2V G @VGE = 15V, IC = 33A E n-channel Description Co-packaged IGBTs are

5.2. irgp420u.pdf Size:109K _international_rectifier

IRGP4086
IRGP4086

PD - 9.781 IRGP420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 7.5A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have high

5.3. irgp430u.pdf Size:108K _international_rectifier

IRGP4086
IRGP4086

PD - 9.780 IRGP430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT .A=JKHAI C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 15A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have highe

5.4. irgp450lc.pdf Size:159K _international_rectifier

IRGP4086
IRGP4086

PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.5. irgp440ud2.pdf Size:213K _international_rectifier

IRGP4086
IRGP4086

PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 22A E n-channel Description C

5.6. irgp450u.pdf Size:106K _international_rectifier

IRGP4086
IRGP4086

PD - 9.1033A IRGP450U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.2V G @VGE = 15V, IC = 33A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hi

5.7. irgp440u.pdf Size:108K _international_rectifier

IRGP4086
IRGP4086

PD - 9.779 IRGP440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT .A=JKHAI C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 22A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have highe

5.8. irgp460lc.pdf Size:154K _international_rectifier

IRGP4086
IRGP4086

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27? Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.9. irgp430ud2.pdf Size:207K _international_rectifier

IRGP4086
IRGP4086

PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 15A E n-channel Description

Другие IGBT... IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IRGP4069 , IRGP4069D , IRGP4072D , IRG4BC30W , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-E , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , IRGR3B60KD2 , IRGS10B60KD .

 


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Обновления

IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |
 

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