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RJP30H1DPD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: RJP30H1DPD

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc):

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 360V

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.5V

Максимально допустимое напряжение эмиттер-затвор (Ueg):

Максимальный постоянный ток коллектора (Ic): 30A

Максимальная температура перехода (Tj):

Время нарастания: 150

Емкость коллектора (Cc), pf:

Корпус: TO252

Аналог (замена) для RJP30H1DPD

RJP30H1DPD PDF doc:

1.1. r07ds0466ej_rjp30h1dpp.pdf Size:151K _renesas

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr =80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ? Low leak current: ICES = 1 ?A max. ? Isolated package TO-220FL

1.2. r07ds0465ej_rjp30h1dpd.pdf Size:151K _renesas

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr = 80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. ? Low leak current: ICES = 1 ?A max. Outline RENESAS Package co

1.3. rjp30h1dpp-m0.pdf Size:130K _igbt

RJP30H1DPD
RJP30H1DPD

 Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr =80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.  Low leak current: ICES = 1 A max.  Isolated p

1.4. rjp30h1dpd.pdf Size:130K _igbt

RJP30H1DPD
RJP30H1DPD

 Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENES

Другие IGBT... RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , SGW30N60HS , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM .

 


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Обновления

IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |
 

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