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IRG4BC30W-S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4BC30W-S

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 100W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.1V

Максимально допустимое напряжение эмиттер-затвор (Ueg):

Максимальный постоянный ток коллектора (Ic): 12A

Максимальная температура перехода (Tj): 150

Время нарастания:

Емкость коллектора (Cc), pf:

Корпус: D2PAK

Аналог (замена) для IRG4BC30W-S

IRG4BC30W-S PDF doc:

1.1. irg4bc30w.pdf Size:139K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I I T D T I T I T Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E

1.2. irg4bc30w-s.pdf Size:188K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E Low IGBT conduction losses n-channel Latest

1.3. irg4bc30w.pdf Size:142K _igbt_a

IRG4BC30W-S
IRG4BC30W-S

 D I I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

1.4. irg4bc30w-s.pdf Size:169K _igbt_a

IRG4BC30W-S
IRG4BC30W-S

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E • Low IGBT conduction losses n-channe

Другие IGBT... IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , RJP63K2DPK-M0 , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD .

 


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Список транзисторов

Обновления

IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |
 

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