STL150N3LLH5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: STL150N3LLH5

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 4

Предельно допустимое напряжение сток-исток (Uds): 30V

Предельно допустимое напряжение затвор-исток (Ugs):

Максимально допустимый постоянный ток стока (Id): 35

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf:

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 0.00175

Тип корпуса: PowerFLAT_5x6

Аналог (замена) для STL150N3LLH5

STL150N3LLH5 - PDF-даташиты для загрузки или просмотра

1.1. stl150n3llh6.pdf Size:829K _st

(pulsed) 132 A PTOT (1) Total dissipation at TC = 25 �C 80 W PTOT (3) Total dissipation at TC = 25 �C 4 W Derating factor 0.03 W/�C TJ Operating junction temperature -55 to 150 �C Storage temperature Tstg 1. The value is rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state) 1.56 �C/W Rthj-pcb (1) Thermal

1.2. stl150n3llh5.pdf Size:522K _st

at TC = 25 �C 80 W PTOT (3) Total dissipation at TC = 25 �C 4 W Derating factor 0.03 W/�C TJ Operating junction temperature -55 to 150 �C Storage temperature Tstg 1. The value is rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state) 1.56 �C/W Rthj-pcb (1) Thermal resistance junction-ambient 31.3 �C/W 1.

5.1. stl15n3llh5.pdf Size:849K _st

(continuous) at TC=100 �C 9.3 A IDM(2) Drain current (pulsed) 60 A PTOT(3) Total dissipation at TC = 25 �C 50 W PTOT(1) Total dissipation at TC = 25 �C 2 W Derating factor 0.4 W/�C TJ Operating junction temperature -55 to 150 �C storage temperature Tstg 1. The value is rated according Rthj-pcb 2. Pulse width limited by safe operating area. 3. The vaule is rated according Rthj-c Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (dra

5.2. stl15dn4f5.pdf Size:775K _st

IDM(3) Drain current (pulsed) 60 A PTOT (1) Total dissipation at TC = 25�C 60 W PTOT (2) Total dissipation at TC = 25�C, t < 10 sec 4.3 W Derating factor 0.03 W/�C TJ Operating junction temperature -55 to 175 �C Storage temperature Tstg 1. The value is rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state)

5.3. 2stl1525.pdf Size:130K _st

(1) breakdown voltage IC = 10 mA 25 V (IB = 0) Emitter-base breakdown V(BR)EBO IE = 100 �A 5 V voltage (IC = 0) IC = 0.5 A VCE = 2 V 300 hFE (1) DC current gain IC = 3 A VCE = 2 V 100 IC = 5 A VCE = 5 V 150 IC = 3 A IB = 300 mA 220 mV Collector-emitter VCE(sat) (1) saturation voltage IC = 3.5 A IB = 40 mA 500 mV Base-emitter saturation VBE(sat) (1) IC = 3 A IB = 300 mA 1.2 V voltage Collector-base CCBO VCB = 10 V, f = 1 MHz 20 pF capacitance (IE = 0) fT Transition frequen

Другие MOSET... STI8N65M5 , STL100N1VH5 , STL100N6LF6 , STL10N3LLH5 , STL11N3LLH6 , STL12N65M5 , STL13NM60N , STL140N4LLF5 , BF982 , STL150N3LLH6 , STL15DN4F5 , STL15N3LLH5 , STL160N3LLH6 , STL16N1VH5 , STL16N65M5 , STL17N3LLH6 , STL18N55M5 .