SSM3K123TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SSM3K123TU

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd):

Предельно допустимое напряжение сток-исток (Uds): 20V

Предельно допустимое напряжение затвор-исток (Ugs): 10

Максимально допустимый постоянный ток стока (Id): 4.2

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf:

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 0.028

Тип корпуса: UFM

Аналог (замена) для SSM3K123TU

SSM3K123TU - PDF-даташиты для загрузки или просмотра

1.1. ssm3k123tu_071101.pdf Size:165K _toshiba

eshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ? 1.0 V Forward transfer admittance ?Yfs? VDS = 3 V, ID = 3.0 A (Note 3) 12.5 25 ? S ID = 3.0 A, VGS = 4.0 V (Note 3) ? 19 28 ID = 3.0 A, VGS = 2.5 V (Note 3) ? 23 32 Drain-Source ON-resistance RDS (ON) m? ID = 1.0 A, VGS = 1.8 V (Note 3) ? 28 43 ID = 0.5 A, VGS = 1.5 V (Note 3) ? 35 66 Input capacitance Ciss ? 1010 ? Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ? 162 ? pF Reverse transfer capacitance Crss ? 150 ? Total Gate Ch

3.1. ssm3k122tu_071101.pdf Size:145K _toshiba

e threshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ? 1.0 V Forward transfer admittance ?Yfs? VDS = 3 V, ID = 1.0 A (Note 3) 2.6 5.2 ? S ID = 1.0 A, VGS = 4.0 V (Note 3) ? 87 123 ID = 1.0 A, VGS = 2.5 V (Note 3) ? 112 161 Drain-Source ON-resistance RDS (ON) m? ID = 0.5 A, VGS = 1.8 V (Note 3) ? 147 211 ID = 0.3 A, VGS = 1.5 V (Note 3) ? 182 304 Input capacitance Ciss ? 195 ? Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ? 35 ? pF Reverse transfer capacitance Crss ? 29 ? To

3.2. ssm3k124tu_071101.pdf Size:153K _toshiba

Note3) ? 88 120 Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ? 180 ? pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ? 100 ? pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ? 38 ? pF Turn-on time ton VDD = 10 V, ID = 1.5 A, ? 13 ? Switching time ns VGS = 0 to 4 V, RG = 10 ? ? ? Turn-off time toff 14 ? � 0.9 � 1.25 V Drain�source forward voltage VDSF ID = - 2.4 A, VGS = 0 V (Note3) Note3: Pulse test 1 2007-11-01 -0.05 +0.1 0.3 0.65

3.3. ssm3k127tu_071113.pdf Size:191K _toshiba

d voltage Vth VDS = 3 V, ID = 1 mA 0.4 ? 1.0 V Forward transfer admittance ?Yfs? VDS = 3 V, ID = 1.0 A (Note3) 2.1 4.2 ? S ID = 1.0 A, VGS = 4.0 V (Note3) ? 93 123 Drain�source ON-resistance RDS (ON) ID = 0.8 A, VGS = 2.5 V (Note3) ? 115 167 m? ID = 0.5 A, VGS = 1.8 V (Note3) ? 155 286 Input capacitance Ciss ? 123 ? Output capacitance Coss VDS = 15V, VGS = 0 V, f = 1 MHz ? 43 ? pF Reverse transfer capacitance Crss ? 18 ? Total Gate Charge Qg ? 1.5 ? VDS = 15V, ID = 2.0 A Gate-Sour

3.4. ssm3k128tu_070606.pdf Size:197K _toshiba

(b) VIN 4.0 V 90% VDD = 15 V 4.0 V OUT RG = 10 ? 10% IN < 1% 0 V D.U. = 0 VIN: tr, tf < 5 ns VDD Common Source 90% 10 ?s (c) VOUT Ta = 25�C 10% VDD VDS (ON) tr tf ton toff Marking Equivalent Circuit (top view) 3 3 KKI 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vt

3.5. ssm3k12t_071101.pdf Size:219K _toshiba

ected by the environment in which the product is used. When using this device, please take heat dissipation fully into account. 1 2007-11-01 SSM3K12T Marking Equivalent Circuit 3 3 KDJ 1 2 12 Electrical Characteristics (Ta = 25�C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = �16 V, VDS = 0 ? ? �1 ?A Drain-Source breakdown voltage V (BR) DSS ID = 1 mA, VGS = 0 30 ? ? V Drain Cut-off current IDSS VDS = 30 V, VGS = 0 ? ? 1 ?A Gate thr

3.6. ssm3k124tu.pdf Size:314K _toshiba

90% OUT 4 V IN 10% 0 V 0 VDD (c) VOUT 10 �s 10% VDD 90% VDD = 10 V VDS (ON) RG = 10 ? tr tf < 1% D.U. = ton toff VIN: tr, tf < 5 ns Common Source Ta = 25�C Marking Equivalent Circuit (top view) 3 3 KKE 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requi

3.7. ssm3k121tu.pdf Size:165K _toshiba

old voltage Vth VDS = 3 V, ID = 1 mA 0.35 ? 1.0 V Forward transfer admittance ?Yfs? VDS = 3 V, ID = 2.0 A (Note 3) 6.5 13 ? S ID = 2.0 A, VGS = 4.0 V (Note 3) ? 36 48 ID = 2.0 A, VGS = 2.5 V (Note 3) ? 46 63 Drain-Source ON-resistance RDS (ON) m? ID = 1.0 A, VGS = 1.8 V (Note 3) ? 60 93 ID = 0.5 A, VGS = 1.5 V (Note 3) ? 75 140 Input capacitance Ciss ? 400 ? Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ? 68 ? pF Reverse transfer capacitance Crss ? 60 ? Total Gate Charge Q

3.8. ssm3k126tu_071101.pdf Size:163K _toshiba

2 Drain-Source ON-resistance RDS (ON) m? ID = 3.0 A, VGS = 4.0 V (Note 3) ? 28 43 Input capacitance Ciss ? 720 ? VDS = 15 V, VGS = 0 V, f = 1 MHz pF Output capacitance Coss ? 128 ? Reverse transfer capacitance Crss ? 115 ? Total Gate Charge Qg ? 20.5 ? VDS = 15 V, IDS= 3.9 A Gate-Source Charge Qgs ? 16.2 ? nC VGS = 10 V Gate-Drain Charge Qgd ? 4.3 ? Turn-on time ton VDD = 15 V, ID = 1.0 A, ? 20 ? Switching time ns VGS = 0~4.0 V, RG = 10 ? Turn-off time toff ? 24 ? D

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