2SK1529 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK1529

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 120

Предельно допустимое напряжение сток-исток (Uds): 180V

Предельно допустимое напряжение затвор-исток (Ugs):

Максимально допустимый постоянный ток стока (Id): 10

Максимальная температура канала (Tj):

Время нарастания (tr):

Выходная емкость (Cd), pf:

Сопротивление сток-исток открытого транзистора (Rds), Ohm:

Тип корпуса: TO3P(N)

Аналог (замена) для 2SK1529

2SK1529 - PDF-даташиты для загрузки или просмотра

1.1. 2sk1529.pdf Size:287K _toshiba

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIB

4.1. 2sk1526.pdf Size:83K _renesas

f Body to drain diode forward voltage VDF � 1.2 � V IF = 40 A, VGS = 0 Body to drain diode reverse recovery t � 600 � ns I = 40 A, V = 0, rr F GS time di /dt = 100 A/�s F Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1526, 2SK1527 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 300 1,000 300 100 200 30 10 3 100 1 0.3 2SK1526 Ta = 25�C 2SK1527 0.1 0 50 100 150 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Ambi

4.2. rej03g0950_2sk1526ds.pdf Size:116K _renesas

design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document f

4.3. rej03g0951_2sk1528lsds.pdf Size:108K _renesas

design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document f

4.4. rej03g0949_2sk1521ds.pdf Size:117K _renesas

design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document f

4.5. 2sk1521.pdf Size:83K _renesas

600 � ns Fall time t � 250 � ns f Body to drain diode forward voltage VDF � 1.1 � V IF = 50 A, VGS = 0 Body to drain diode reverse recovery t � 120 � ns I = 50 A, V = 0, rr F GS time di /dt = 100 A/�s F Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1521, 2SK1522 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1,000 300 300 100 200 30 10 3 100 1 0.3 2SK1521 Ta = 25�C 2SK1522 0.1 0 50 100 150 1 3 10 30 100 300 1,000 Cas

4.6. 2sk1528.pdf Size:96K _renesas

ward voltage VDF � 0.9 � V IF = 4 A, VGS = 0 Body to drain diode reverse recovery t � 800 � ns I = 4 A, V = 0, rr F GS time di /dt = 100 A/�s F Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 7 2SK1528(L), 2SK1528(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 80 20 10 60 5 2 40 1 0.5 20 0.2 0.1 Ta = 25�C 0.05 0 50 100 150 200 1 3 10 30 100 300 1,000 Case Temperature TC (�C) Drain to Source Voltage VDS (V) Typical Outpu

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