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IRF3710 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF3710

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 200 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Максимально допустимый постоянный ток стока (Id): 57 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.025 Ohm

Тип корпуса: TO220AB

Аналог (замена) для IRF3710

IRF3710 PDF doc:

1.1. irf3710z.pdf Size:172K _international_rectifier

IRF3710
IRF3710

PD - 94632 IRF3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 18m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 59A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

1.2. irf3710.pdf Size:94K _international_rectifier

IRF3710
IRF3710

PD - 91309A IRF3710 HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 23m? G Fast Switching Fully Avalanche Rated ID = 57A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.3. irf3710s.pdf Size:184K _international_rectifier

IRF3710
IRF3710

PD -91310C IRF3710S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3710S) VDSS = 100V Low-profile through-hole (IRF3710L) 175C Operating Temperature RDS(on) = 0.025? Fast Switching G Fully Avalanche Rated ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

1.4. irf3710.pdf Size:274K _first_silicon

IRF3710
IRF3710

SEMICONDUCTOR IRF3710 TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25℃) Symbol Rating Unit 1.Gate 2.Drain

Другие MOSFET... IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRFP150N , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 .

 


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Список транзисторов

Обновления

MOSFET: 2SK642 | 2SK641 | SVF2N60D | SVF2N60T | SVF2N60F | SVF2N60M | FQP630 | FMR23N50E | FMV23N50E | FMH23N50E | STK0460F | UTC50N06L | TSP8N60M | TSF8N60M | STK630F |
 

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