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IRFZ44N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFZ44N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 83 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Максимально допустимый постоянный ток стока (Id): 41 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.024 Ohm

Тип корпуса: TO220AB

Аналог (замена) для IRFZ44N

IRFZ44N PDF doc:

1.1. irfz44n.pdf Size:100K _update

IRFZ44N
IRFZ44N

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor

1.2. irfz44n_1.pdf Size:52K _philips

IRFZ44N
IRFZ44N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 49 A features very low on-state re

1.3. irfz44ns_1.pdf Size:57K _philips

IRFZ44N
IRFZ44N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device features ve

1.4. irfz44n.pdf Size:100K _international_rectifier

IRFZ44N
IRFZ44N

PD - 94053 IRFZ44N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.5. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44N
IRFZ44N

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL) D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely

1.6. irfz44n_1.pdf Size:52K _international_rectifier

IRFZ44N
IRFZ44N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 49 A features very low on-state re

1.7. irfz44ns_1.pdf Size:57K _international_rectifier

IRFZ44N
IRFZ44N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device features ve

1.8. irfz44n.pdf Size:145K _inchange_semiconductor

IRFZ44N
IRFZ44N

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor contro

1.9. lirfz44n.pdf Size:252K _lrc

IRFZ44N
IRFZ44N

LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 10

Другие MOSFET... IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , 2SK2837 , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL .

 


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