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STD17N06L
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник Наименование прибора: STD17N06L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 55
Предельно допустимое напряжение сток-исток (Uds): 60V
Предельно допустимое напряжение затвор-исток (Ugs):
Максимально допустимый постоянный ток стока (Id): 17
Максимальная температура канала (Tj): 150
Время нарастания (tr):
Выходная емкость (Cd), pf:
Сопротивление сток-исток открытого транзистора (Rds), Ohm:
Тип корпуса: DPAK
Аналог (замена) для STD17N06L
STD17N06L
- PDF-даташиты для загрузки или просмотра
1.1. std17n05l_std17n06l.pdf  Size:350K _st  |
 | 25 V)
EAR Repetitive Avalanche Energy 15 mJ
(pulse width limited by Tj max, ? < 1%)
IAR Avalanche Current, Repetitive or Not-Repetitive 12 A
(Tc = 100 oC, pulse width limited by Tj max, ? < 1%)
ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 A VGS = 0
Breakdown Voltage for STD17N05L 50 V
for STD17N06L 60 V
IDSS Zero Gate Voltage VDS = Max Rating 250 A
Drain Current (VGS = |
3.1. std17n05.pdf Size:180K _st  |
 | 5 mJ
AR
(pulse width limited by T max, ? < 1%)
j
IAR Avalanche Current, Repetitive or Not-Repetitive 12 A
o
(Tc = 100 C, pulse width limited by Tj max, ? < 1%)
o
ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 A VGS = 0
Breakdown Voltage for STD17N05 50 V
for STD17N06 60 V
IDSS Zero Gate Voltage VDS = Max Rating 1 A
o
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 12 |
4.1. std17ne03l.pdf Size:55K _st  |
 | gle Pulse Avalanche Energy 50 mJ
AS
(starting Tj = 25 oC, ID = IAR, VDD = 15 V)
ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V Drain-source ID = 250 A VGS = 0 30 V
(BR)DSS
Breakdown Voltage
I Zero Gate Voltage V = Max Rating 1 A
DSS DS
Drain Current (VGS = 0) VDS = Max Rating Tc =125 oC 10 A
IGSS Gate-body Leakage 100 nA
V = 20 V
GS
Current (VDS = 0)
ON (?)
Symbol Parameter Test Conditions |
4.2. std17nf03l_std17nf03l-1.pdf Size:310K _st  |
 | tinuous) at TC = 25C 17 A
ID Drain current (continuous) at TC = 100C 12 A
IDM(1) Drain current (pulsed) 68 A
Ptot Total dissipation at TC = 25C 30 W
Derating Factor 0.2 W/C
dv/dt(2) Peak diode recovery avalanche energy 7 V/ns
EAS (3) Single pulse avalanche energy 200 mJ
Tstg Storage temperature
-55 to 175 C
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ?
17A, di/dt ?300A/s, VDD =V(BR)DSS, Tj ?TJMAX
3. Starting Tj = 25 C, ID = 8.5 |
4.3. std17nf03l.pdf Size:264K _st  |
 |
IDSS Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 C 10 A
IGSS Gate-body Leakage VGS = 20V 100 nA
Current (VDS = 0)
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1V
VGS = 10V, ID = 8.5 A 0.038 0.05 ?
RDS(on) Static Drain-source On
Resistance
VGS = 5 V, ID = 8.5 A 0.045 0.06
VDS > ID(on) x RDS(on)max,
ID(on) On State Drain Current 17 A
VGS =10V
DYNAMIC
Symbol Parameter Test Conditions |
4.4. std17n.pdf Size:172K _st  |
 | epetitive Avalanche Energy 15 mJ
AR
(pulse width limited by T max, ? < 1%)
j
IAR Avalanche Current, Repetitive or Not-Repetitive 12 A
o
(Tc = 100 C, pulse width limited by Tj max, ? < 1%)
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 A VGS = 0
Breakdown Voltage for STD17N05L 50 V
for STD17N06L 60 V
IDSS Zero Gate Voltage VDS = Max Rating 250 A
o
Drain Current (VGS = |
4.5. sti17nf25_std17nf25_stf17nf25_stp17nf25.pdf Size:521K _st  |
 |
TO-220
TO-220FP
DPAK/I?PAK
VDS Drain-source voltage (VGS = 0) 250 V
VGS Gate-source voltage 20 V
ID Drain current (continuous) at TC = 25C 17 17(1) A
ID Drain current (continuous) at TC=100C 10 10(1) A
IDM(2) Drain current (pulsed) 68 68(1) A
PTOT Total dissipation at TC = 25C 90 25 W
Derating factor 0.72 0.2 W/C
dv/dt(3) Peak diode recovery voltage slope 10 V/ns
TJ
Operating junction temperature
-55 to 150 C
Storage temperature
Tstg
1. Limited only by maximum temperature |
Другие MOSET... STD17N05
, STD17N05-1
, STD17N05L
, STD17N05L-1
, STD17N05LT4
, STD17N05T4
, STD17N06
, STD17N06-1
, 2SK955
, STD17N06L-1
, STD17N06LT4
, STD17N06T4
, STD1NA60-1
, STD1NA60T4
, STD20N06-1
, STD20N06T4
, STD2N50-1
.
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