Все транзисторы. Справочник


Введите не менее 3 символов (цифр или букв)
 
2SC3280
  2SC3280
  2SC3280
 
2SC3280
  2SC3280
  2SC3280
 
2SC3280
  2SC3280
 
 
Список
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508DXI
BU508FI .. BUL6822
BUL6822A .. BUV39
BUV40 .. BUX80/6
BUX80/7 .. C9080
C9081 .. CEN-U45
CEN-U51 .. CJD3055
CJD31C .. CMPT918
CMPT930 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM7
D44VM8 .. DKS21
DKS22 .. DTA123EUA
DTA123J .. DTC143XE
DTC143XEA .. DZT491
DZT5401 .. ECG351
ECG352 .. ESM117
ESM118 .. FB3727
FB3728 .. FJV3113R
FJV3114R .. FMMT4964
FMMT497 .. FT400B
FT401 .. GC112
GC115 .. GES4400
GES4401 .. GI2715
GI2716 .. GT309D
GT309E .. HA7540
HA7541 .. HN1C01F
HN1C01FE .. HUN5236
HUN5237 .. JC559A
JC559C .. KF630D
KF630S .. KRA729U
KRA730E .. KRC662U
KRC663F .. KSA643
KSA643-G .. KSC2682-Y
KSC2688 .. KSD2012
KSD2012-G .. KSR2102
KSR2103 .. KT315E-1
KT315E1 .. KT610A
KT610B .. KT8127A
KT8127A-1 .. KT852G
KT852V .. KTA1703
KTA1704 .. KTC813U
KTC814U .. MA287
MA393 .. MH0812
MH0813 .. MJ8503
MJ8504 .. MJE41
MJE41A .. MM4033
MM4036 .. MMBT4403WT1
MMBT4888 .. MMUN2134LT1
MMUN2134LT2 .. MP3905R
MP3906 .. MPQ5447
MPQ5449 .. MPS834
MPS835 .. MRF427
MRF428 .. MZT127
MZT2955 .. NB011FJ
NB011FK .. NB123F
NB123FH .. NB323H
NB323K .. NPS3721
NPS3725 .. NSS40300
NSS40300DD .. OC466K
OC467 .. PBSS306NX
PBSS306NZ .. PEMB30
PEMB4 .. PN4250A
PN4257 .. PZTA14
PZTA27 .. RN1307
RN1308 .. RN2401
RN2402 .. RT484
RT497M .. SD3866AF
SD3960F .. SGS130
SGS131 .. SRA2202EF
SRA2202M .. STA3360PI
STA723D .. SUT161G
SUT290 .. TA1703B
TA1704 .. TI804
TI805 .. TIPL13004
TIPL13005 .. TN3398
TN3402 .. TP4258
TP4258A .. UMG1N
UMG2N .. UN6214
UN6215Q .. ZT1486A
ZT1487 .. ZTX342L
ZTX342M .. ZXTN25100DZ
ZXTN26020DMF .. ZXTPS720MC
 
Биполярные транзисторы. Типовые характеристики. Справочник. Даташиты. Описания.
 

2SC3280 - описание производителя. Основные характеристики и параметры. Даташиты. Справочник транзисторов.

Наименование производителя: 2SC3280

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 120

Макcимально допустимое напряжение коллектор-база (Ucb): 160

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160

Макcимально допустимое напряжение эмиттер-база (Ueb): 5

Макcимальный постоянный ток коллектора (Ic): 12

Предельная температура PN-перехода (Tj), град: 150

Граничная частота коэффициента передачи тока (ft): 30

Ёмкость коллекторного перехода (Cc), пФ: 220

Статический коэффициент передачи тока (hfe): 55

Корпус транзистора: X104

Аналоги (замена) для 2SC3280

2SC3280 PDF doc:

1.1. 2sc3280.pdf Size:25K _wingshing

2SC3280
2SC3280
2SC3280 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SA1301 ABSOLUTE MAXIMUM RATING (Ta=25C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A Collector Dissipation PC 120 W Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Ta=25C C) C C Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=10mA IE=0 160 V Collector Emitter Breakdown Voltage BVCEO IC=5 mA RBE=? 160 V Emitter Base Breakdown Voltage BVEBO IE=4mA IC=0 6 V Collector Cutoff Current ICBO VCB=80V IE=0 0.1 mA Emitter Cutoff Current IEBO VEB=4V IC=0 0.1 mA *DC Current Gain hFE1 VCE=5V IC=1A 55 160 DC Current Gain hFE2 VCE=5V IC=5A 50 Collector- Emitter Saturation Volta

1.2. 2sc3280.pdf Size:161K _inchange_semiconductor

2SC3280
2SC3280
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3280 DESCRIPTION Ў¤ With TO-3PL package Ў¤ Complement to type 2SA1301 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Emitter-base voltage Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 160 160 5 12 1.2 UNIT V V V A A W Ўж Ўж Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 120 150 -55~150

4.1. 2sc3281.pdf Size:134K _mospec

2SC3280
2SC3280
A A A

4.2. 2sc3281.pdf Size:190K _jmnic

2SC3280
2SC3280
JMnic Product Specification Silicon NPN Power Transistors 2SC3281 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1302 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 1.5 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon NPN Power Transistors 2SC3281 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown

4.3. 2sc3284.pdf Size:28K _sanken-ele

2SC3280
2SC3280
LAPT 2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application : Audio and General Purpose (Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-100(TO3P) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.8 0.4 15.6 0.1 VCBO 150 ICBO VCB=150V 100max A 9.6 2.0 V VCEO 150 IEBO VEB=5V 100max A V VEBO 5 V(BR)CEO IC=25mA 150min V V a 0.1 o3.2 IC hFE VCE=4V, IC=5A 50min? 14 A b IB VCE(sat) IC=5A, IB=0.5A 2.0max V 3 A PC fT VCE=12V, IE=2A 60typ MHz 125(Tc=25C) W 2 Tj COB VCB=10V, f=1MHz 200typ pF 150 3 C Tstg 55 to +150 ? hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05+0.2 0.65+0.2 C -0.1 -0.1 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Part No. b. Lot No. 60 12 5 10 5 0.5 0.5 0.2typ 1.5typ 0.35typ IC

4.4. 2sc3281.pdf Size:159K _inchange_semiconductor

2SC3280
2SC3280
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3281 DESCRIPTION Ў¤ With TO-3PL package Ў¤ Complement to type 2SA1302 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Emitter-base voltage Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE 200 200 5 15 1.5 UNIT V V V A A W Ўж Ўж Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 150 150 -55~150

4.5. 2sc3285.pdf Size:90K _inchange_semiconductor

2SC3280
2SC3280
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3285 DESCRIPTION ·With TO-3PN package ·High speed switching ·Good linearity of hFE ·High VCBO APPLICATIONS ·For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICP Collector current-peak 6 A IB Base current 2 A TC=25? 70 PC Collector power dissipation W Ta=25? 2.5 Junction temperature 150 ? Tj Storage temperature -55~150 ? Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3285 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS

4.6. 2sc3284.pdf Size:153K _inchange_semiconductor

2SC3280
2SC3280
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3284 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SA1303 APPLICATIONS Ў¤ Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage E SEM NG Open base TC=25Ўж Open emitter OND IC CONDITIONS TOR UC VALUE 150 150 5 14 3 125 150 -55~150 UNIT V V V A A W Ўж Ўж Open collector Collector power dissipation Junction temperature Storage temperature

Другие транзисторы... 2SC3277N , 2SC3278 , 2SC3279 , 2SC3279-L , 2SC3279-M , 2SC3279-N , 2SC3279-P , 2SC328 , BD139 , 2SC3280-O , 2SC3280-R , 2SC3281 , 2SC3281-O , 2SC3281-R , 2SC3282 , 2SC3282A , 2SC3283 .

(C) 2005 All Right reserved Биполярные | | MOSFET | | IGBT | | Производители | | SMD-коды | | Типы корпусов | | Contact alltransistors[@]gmail.com