2N222 - параметры транзистора, его аналоги, Даташиты

Vdc)(1) 50 � (IC = 500 mAdc, VCE = 10 Vdc)(1) 40 � Collector�Emitter Saturation Voltage(1) VCE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) � 0.3 (IC = 500 mAdc, IB = 50 mAdc) � 1.0 Base�Emitter Saturation Voltage(1) VBE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2 (IC = 500 mAdc, IB = 50 mAdc) � 2.0 SMALL�SIGNAL CHARACTERISTICS Current�Gain � Bandwidth Product(2) fT 300 � MHz (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance Cobo � 8.0 pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

1.2. mtp2n2222a.pdf Size:238K _motorola

1.3. 2n2222_2n2222a_cnv_2.pdf Size:53K _philips

Rth j-a thermal resistance from junction to ambient in free air 350 K/W Rth j-c thermal resistance from junction to case 146 K/W 1997 May 29 3 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A CHARACTERISTICS Tj =25�C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current 2N2222 IE = 0; VCB =50V - 10 nA IE = 0; VCB = 50 V; Tamb = 150 �C - 10 �A ICBO collector cut-off current 2N2222A IE = 0; VCB =60V

1.4. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

V hFE* DC Current Gain for 2N2218 and 2N2221 IC = 0.1 mA VCE = 10 V 20 IC =1 mA VCE = 10 V 25 IC =10 mA VCE = 10 V 35 IC =150 mA VCE = 10 V 40 120 IC =500 mA VCE = 10 V 20 IC =150 mA VCE = 1 V 20 for 2N2219 and 2N2222 IC = 0.1 mA VCE = 10 V 35 IC =1 mA VCE = 10 V 50 IC =10 mA VCE = 10 V 75 IC =150 mA VCE = 10 V 100 300 IC =500 mA VCE = 10 V 30 IC =150 mA VCE = 1 V 50 fT Transition Frequency IC =20 mA VCE = 20 V 250 MHz f = 100 MHz CCBO Collector-base Capacitance IE =0 VCB = 1

1.5. 2n2219a_2n2222a.pdf Size:166K _st

DC Current Gain IC = 0.1 mA VCE = 10 V 35 IC = 1 mA VCE = 10 V 50 IC = 10 mA VCE = 10 V 75 IC = 150 mA VCE = 10 V 100 300 I = 500 mA V = 10 V 40 C CE IC = 150 mA VCE = 1 V 50 IC = 10 mA VCE = 10 V Tamb = -55 oC 35 hfe? Small Signal Current IC = 1 mA VCE = 10 V f = 1KHz 50 300 Gain IC = 10 mA VCE = 10 V f = 1KHz 75 375 fT Transition Frequency IC = 20 mA VCE = 20 V 300 MHz f = 100 MHz CEBO Emitter-Base IC = 0 VEB = 0.5 V f = 100KHz 25 pF Capacitance CCBO Collector-Base IE = 0 VCB

1.6. 2n2222a_2n2219a.pdf Size:168K _st

1.7. 2n2221a_2n2222a.pdf Size:116K _central

z 3.0 15 5.0 35 �mhos hoe VCE=10V, IC=10mA, f=1.0kHz 10 100 25 200 �mhos rb'Cc VCB=10V, IE=20mA, f=31.8MHz 150 150 ps NF VCE=10V, IC=100�A, RS=1.0k?, f=1.0kHz 4.0 dB td VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 10 10 ns tr VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 25 25 ns ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 225 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 60 ns TO-18 PACKAGE - MECHANICAL OUTLINE DIMENSIONS INCHES MILLIMETERS A SYMBOL MIN MAX MIN MAX B A (DIA) 0.209 0.230 5.31

1.8. 2n2222_2n2222a(to-18).pdf Size:232K _mcc

0.533 www.mccsemi.com 1 of 3 Revision: A 2011/01/01 MCC 2N2222,2N2222A TM Micro Commercial Components Symbol Parameter Min Max Units ON CHARACTERISTICS* VCE(sat) Collector-Emitter Saturation Voltage8 (IC=150mAdc, IB=15mAdc) 2N2222 --- 400 mVdc (IC=500mAdc, IB=50mAdc) --- 1.6 Vdc VCE(sat) Collector-Emitter Saturation Voltage* (IC=150mAdc, IB=15mAdc) 2N2222A --- 300 mVdc (IC=500mAdc, IB=50mAdc) --- 1.0 Vdc VBE(sat) Base-Emitter Saturation Voltage * (IC=150mAdc, IB=15mAdc) 2N2222

1.9. p2n2222a-d.pdf Size:164K _onsemi

ted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector--Emitter Breakdown Voltage V(BR)CEO Vdc (IC =10mAdc, IB =0) 40 -- Collector--Base Breakdown Voltage V(BR)CBO 75 Vdc (IC =10mAdc, IE =0) -- Emitter--Base Breakdown Voltage V(BR)EBO Vdc (IE =10mAdc, IC =0) 6.0 -- Collector Cutoff Current ICEX nAdc (VCE =60Vdc, VEB(off) =3.0 Vdc) -- 10 Collector Cutoff Current ICBO mAdc (VCB =60Vdc, IE =0) -- 0.01 (VCB =60Vdc, IE =0, TA = 150�C) -- 10 Emitter Cutoff Current IEBO 10

1.10. 2n2222aua.pdf Size:186K _optek

1.11. 2n2222aub.pdf Size:250K _optek

acceptance tests are provided on page 13-4. The burn-in condition is VCB = 30 V, PD = 200 mW, TA = 25o C, t =80 hrs. Refer to MIL- PRF-19500/255 for complete requirements. In addition, the TX and TXV versions are 100% thermal response tested. When ordering parts without processing, do not use a JAN prefix. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 15-6 Types JANTX, JANTXV-2N2222AUB Electrical Characteristics (TA = 25o C u

1.12. 2n2223a.pdf Size:18K _semelab

Voltage V IC = 50mA IB = 5mA 0.9 VBE(sat) Base � Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS IC = 50mA VCE = 10V 50 MHz fT Current Gain Bandwidth Product f = 20MHz IE = 0 VCB = 10V 15 pF Cob Output Capacitance f = 1MHz IC = 0 VBE = 0.5V 85 pF Cib Input Capacitance f = 1MHz IC = 1mA VCB = 5V 20 30 hib Input Impedance f = 1kHz IC = 1mA VCE = 5V 40 200 � hfe Small Signal Current Gain f = 1kHz .05 mhos hoe Output Admittance MATCHING CHARACTERISTICS hFE1/hFE2 DC

1.13. 2n2221.pdf Size:10K _semelab

Другие транзисторы... 2N2218AS , 2N2218S , 2N2219 , 2N2219A , 2N2219AL , 2N2219AQF , 2N2219AS , 2N2219S , 2N3715 , 2N2220 , 2N2220A , 2N2221 , 2N2221A , 2N2221ACSM , 2N2221ADCSM , 2N2221CSM , 2N2221DCSM .


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