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2SD1711 - описание производителя. Основные параметры. Даташиты. Справочник транзисторов.

Наименование производителя: 2SD1711

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100

Макcимально допустимое напряжение коллектор-база (Ucb): 1500

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800

Макcимально допустимое напряжение эмиттер-база (Ueb):

Макcимальный постоянный ток коллектора (Ic): 5

Предельная температура PN-перехода (Tj), град: 150

Граничная частота коэффициента передачи тока (ft):

Ёмкость коллекторного перехода (Cc), пФ:

Статический коэффициент передачи тока (hfe): 8

Корпус транзистора: TO218

Аналоги (замена) для 2SD1711

2SD1711 PDF:

1.1. 2sd1711.pdf Size:28K _wingshing

2SD1711
2SD1711

NPN TRIPLE DIFFUSED 2SD1711 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current (DC

1.2. 2sd1711.pdf Size:93K _inchange_semiconductor

2SD1711
2SD1711

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1711 DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·High reliability. ·Built-in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 E

4.1. 2sd1719.pdf Size:94K _panasonic

2SD1711
2SD1711

Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer Unit: mm 8.50.2 3.40.3 ratio 6.00.2 1.00.1 Features High forward current transfer ratio hFE which has satisfactory lin- 0 to 0.4 earity R = 0.5 0.80.1 R = 0.5 2.540.3 High emitter-base voltage (Collector open) VEBO 1.00.1 1.40.1 0.40.1 N

4.2. 2sd1718.pdf Size:39K _no

2SD1711
2SD1711

4.3. 2sd1710.pdf Size:59K _wingshing

2SD1711
2SD1711

Silicon Diffused Power Transistor 2SD1710 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers TO-3PML QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base) VCE

4.4. 2sd1717.pdf Size:82K _inchange_semiconductor

2SD1711
2SD1711

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1717 DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1162 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.

4.5. 2sd1710.pdf Size:88K _inchange_semiconductor

2SD1711
2SD1711

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1710 DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·High reliability. APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum r

4.6. 2sd1712.pdf Size:89K _inchange_semiconductor

2SD1711
2SD1711

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1712 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SB1157 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(

4.7. 2sd1716.pdf Size:264K _inchange_semiconductor

2SD1711
2SD1711

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1716 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1161 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO

4.8. 2sd1713.pdf Size:264K _inchange_semiconductor

2SD1711
2SD1711

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1713 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1158 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO C

4.9. 2sd1715.pdf Size:163K _inchange_semiconductor

2SD1711
2SD1711

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1715 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SB1160 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(

4.10. 2sd1714.pdf Size:264K _inchange_semiconductor

2SD1711
2SD1711

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1714 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1159 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO

4.11. 2sd1718.pdf Size:82K _inchange_semiconductor

2SD1711
2SD1711

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1718 DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1163 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.

4.12. 2sd1710f.pdf Size:388K _blue-rocket-elect

2SD1711
2SD1711

2SD1710F(BR3DD1710F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage,high speed switching. 用途 / Applications 开关调整,高压开关,快速 DC-DC 转换。 Switching regulator applications, High voltage swit

4.13. 2sd1710a.pdf Size:414K _blue-rocket-elect

2SD1711
2SD1711

2SD1710A(BR3DD1710AR) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage,high speed switching. 用途 / Applications 用于彩电行偏转电路。 Use in horizontal deflection circuites of color TV. 内部等效电路 /

Другие транзисторы... 2SD1705 , 2SD1706 , 2SD1707 , 2SD1708 , 2SD1709 , 2SD170A , 2SD171 , 2SD1710 , 2N2907 , 2SD171-1 , 2SD1712 , 2SD171-2 , 2SD1713 , 2SD1714 , 2SD1715 , 2SD1716 , 2SD1717 .

 


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