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2SD1711
  2SD1711
  2SD1711
 
2SD1711
  2SD1711
  2SD1711
 
2SD1711
  2SD1711
 
 
Список
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU912
BU920 .. BUP39
BUP40 .. BUV98V
BUW11 .. BUY21A
BUY22 .. CCN83
CCS2001 .. CFD2374Q
CFD2375 .. CK28A
CK398 .. CP404
CP405 .. CSA1267Y
CSA1293 .. CSC1684R
CSC1684S .. CSD669A
CSD669AB .. D24A3900A
D26B1 .. D40E4
D40E5 .. D56W2
D6 .. DPLS350E
DPLS350Y .. DTA143XE
DTA143XEA .. DTD113ES
DTD113Z .. ECG13
ECG130 .. ECG482
ECG483 .. ESM3030DV
ESM3045AV .. FCS9018E
FCS9018F .. FJY3009R
FJY3010R .. FMMT6517
FMMT6520 .. FX2369
FX2369A .. GC522
GC522K .. GES5551
GES5551R .. GS-H9033
GS-H9033D .. GT338B
GT338V .. HDA412
HDA420 .. HS5308
HS5810 .. IDD525
IDD526 .. JE9100C
JE9100D .. KRA102
KRA102M .. KRA763U
KRA764E .. KRC836E
KRC836U .. KSB1098-O
KSB1098-R .. KSC2787-R
KSC2787-Y .. KSD5064
KSD5065 .. KST92
KST93 .. KT3198V
KT321A .. KT6134B
KT6134V .. KT814A9
KT814B .. KT897A
KT897B .. KTB1424
KTB1772 .. KTD3055
KTD525 .. MC142
MC150 .. MJ10042
MJ10044 .. MJD350T4
MJD41C .. MJE5851
MJE5852 .. MM869B
MMBA811C5 .. MMBT589
MMBT589L .. MP110B-B
MP110B-G .. MP504A
MP505 .. MPS2925
MPS2926 .. MPSH02
MPSH04 .. MRF905
MRF912 .. NA11HX
NA11HY .. NB013FU
NB013FV .. NB212FY
NB212H .. NKT124
NKT12429 .. NPS5141
NPS5142 .. NTE172A
NTE176 .. OC815
OC816 .. PBSS5160V
PBSS5220T .. PIMD3
PIMH9 .. PN918
PN918R .. RCA1A05
RCA1A06 .. RN1605
RN1606 .. RN2710
RN2710JE .. S15649
S1619 .. SDT9204
SDT9205 .. SGSIF444
SGSIF445 .. SRA2212EF
SRA2212M .. STC5084
STC5085 .. SZD1060
SZD1181 .. TA2470
TA2492 .. TIP140T
TIP141 .. TIS37
TIS38 .. TN4036
TN4037 .. TP929
TP929A .. UN1066
UN1110Q .. UN9218
UN9219 .. ZT403
ZT403P .. ZTX4402L
ZTX4402M .. ZXTP5401FL
ZXTP5401G .. ZXTPS720MC
 
Биполярные транзисторы. Типовые характеристики. Справочник. Даташиты. Описания.
 

2SD1711 - описание производителя. Основные характеристики и параметры. Даташиты. Справочник транзисторов.

Наименование производителя: 2SD1711

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100

Макcимально допустимое напряжение коллектор-база (Ucb): 1500

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800

Макcимально допустимое напряжение эмиттер-база (Ueb): 0

Макcимальный постоянный ток коллектора (Ic): 5

Предельная температура PN-перехода (Tj), град: 150

Граничная частота коэффициента передачи тока (ft):

Ёмкость коллекторного перехода (Cc), пФ:

Статический коэффициент передачи тока (hfe): 8

Корпус транзистора: TO218

Аналоги (замена) для 2SD1711

2SD1711 PDF doc:

1.1. 2sd1711.pdf Size:28K _wingshing

2SD1711
2SD1711
NPN TRIPLE DIFFUSED 2SD1711 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25oC) PC 50 W o C Junction Temperature Tj 150 o C Storage Temperature Tstg -50~150 ELECTRICAL CHARACTERISTICS (TA=25oC) Characterristic Symbol Test Condition Min Typ Max Unit Collector- Emitter Cutoff Current(VBE=0) ICES VCE= 1400 V , 1.0 mA Collector Cutoff Current ICBO RBE=0 10 A Emitter Cutoff Current IEBO VCB= 800 V , IE=0 1.0 mA DC Current Gain hFE VEB= 4V , IC=0 8 Collector- Emitter Saturation Voltage VCE(sat) VCE= 5V , 5.0 V IC=1A IC=4A , IB= 0.8A Wing Shing Computer Components Co., (H.K)Ltd. TeL(852)2341 9276 Fax:(852)27

1.2. 2sd1711.pdf Size:93K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1711 DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·High reliability. ·Built-in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1711 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining

4.1. 2sd1719.pdf Size:94K _panasonic

2SD1711
2SD1711
Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer Unit: mm 8.50.2 3.40.3 ratio 6.00.2 1.00.1 Features High forward current transfer ratio hFE which has satisfactory lin- 0 to 0.4 earity R = 0.5 0.80.1 R = 0.5 2.540.3 High emitter-base voltage (Collector open) VEBO 1.00.1 1.40.1 0.40.1 N type package enabling direct soldering of the radiating fin to the 5.080.5 (8.5) printed circuit board, etc. of small electronic equipment. (6.0) 1.3 1 2 3 Absolute Maximum Ratings TC = 25C Parameter Symbol Rating Unit (6.5) Collector-base voltage (Emitter open) VCBO 100 V 1: Base Collector-emitter voltage (Base open) VCEO 60 V 2: Collector 3: Emitter Emitter-base voltage (Collector open) VEBO 15 V N-G1 Package Collector current IC 6 A Note) Self-supported type package is also prepared. Peak collector current ICP 12 A Base current IB 3 A Collector power dissipation PC

4.2. 2sd1718.pdf Size:39K _no

2SD1711
2SD1711

4.3. 2sd1710.pdf Size:59K _wingshing

2SD1711
2SD1711
Silicon Diffused Power Transistor 2SD1710 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers TO-3PML QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base) VCEO - 600 V Collector current (DC) IC - 5 A Collector current peak value ICM - 10 A Total power dissipation Tmb 25 Ptot - 50 W Collector-emitter saturation voltage IC = 4.0A; IB = 1.0A VCEsat - 5.0 V Collector saturation current f = 16KHz - - A Icsat Diode forward voltage IF = 4.5A 1.6 2.0 V VF Fall time ICsat = 4.5A; f = 16KHz 0.5 1.0 s tf LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V - 1500 V VCESM Collector-emitter voltage (open base) - 600 V VCEO Collector current (DC) - 5 A IC Collector current peak value - 10 A

4.4. 2sd1715.pdf Size:163K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1715 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SB1160 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 9 A ICP Collector current-peak 15 A TC=25? 100 PC Collector power dissipation W 3 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1715 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation

4.5. 2sd1713.pdf Size:264K _inchange_semiconductor

2SD1711
2SD1711
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1713 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1158 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICP Collector Current-Pulse 10 A Collector Power Dissipation 70 @ TC=25? PC W Collector Power Dissipation 3 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1713 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

4.6. 2sd1717.pdf Size:82K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1717 DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1162 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current-peak 20 A 3.5 PC Collector power dissipation W TC=25? 120 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1717 CHARACTERISTICS Tj=25? unless otherwise specified

4.7. 2sd1718.pdf Size:82K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1718 DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1163 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 180 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 25 A 3.5 PC Collector power dissipation W TC=25? 150 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1718 CHARACTERISTICS Tj=25? unless otherwise specified

4.8. 2sd1712.pdf Size:89K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1712 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SB1157 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICP Collector current-peak 8 A TC=25? 60 PC Collector power dissipation W Ta=25? 3 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1712 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter satur

4.9. 2sd1716.pdf Size:264K _inchange_semiconductor

2SD1711
2SD1711
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1716 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1161 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse 20 A Collector Power Dissipation 120 @ TC=25? PC W Collector Power Dissipation 3 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1716 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNI

4.10. 2sd1714.pdf Size:264K _inchange_semiconductor

2SD1711
2SD1711
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1714 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1159 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse 12 A Collector Power Dissipation 80 @ TC=25? PC W Collector Power Dissipation 3 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1714 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

4.11. 2sd1710.pdf Size:88K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1710 DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·High reliability. APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1710 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 800 V

Другие транзисторы... 2SD1705 , 2SD1706 , 2SD1707 , 2SD1708 , 2SD1709 , 2SD170A , 2SD171 , 2SD1710 , 2N2907 , 2SD171-1 , 2SD1712 , 2SD171-2 , 2SD1713 , 2SD1714 , 2SD1715 , 2SD1716 , 2SD1717 .

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