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2SD1711
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2SD1711
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2SD1711
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Список
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
Биполярные транзисторы. Типовые характеристики. Справочник. Даташиты. Описания.
 

2SD1711 - описание производителя. Основные параметры. Даташиты. Справочник транзисторов.

Наименование производителя: 2SD1711

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100

Макcимально допустимое напряжение коллектор-база (Ucb): 1500

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800

Макcимально допустимое напряжение эмиттер-база (Ueb): 0

Макcимальный постоянный ток коллектора (Ic): 5

Предельная температура PN-перехода (Tj), град: 150

Граничная частота коэффициента передачи тока (ft):

Ёмкость коллекторного перехода (Cc), пФ:

Статический коэффициент передачи тока (hfe): 8

Корпус транзистора: TO218

Аналоги (замена) для 2SD1711

2SD1711 PDF doc:

1.1. 2sd1711.pdf Size:28K _wingshing

2SD1711
2SD1711
NPN TRIPLE DIFFUSED 2SD1711 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25oC) PC 50 W o C Junction Temperature Tj 150 o C Storage Temperature Tstg -50~150 ELECTRICAL CHARACTERISTICS (TA=25oC) Characterristic Symbol Test Condition Min Typ Max Unit Collector- Emitter Cutoff Current(VBE=0) ICES VCE= 1400 V , 1.0 mA Collector Cutoff Current ICBO RBE=0 10 A Emitter Cutoff Current IEBO VCB= 800 V , IE=0 1.0 mA DC Current Gain hFE VEB= 4V , IC=0 8 Collector- Emitter Saturation Voltage VCE(sat) VCE= 5V , 5.0 V IC=1A IC=4A , IB= 0.8A Wing Shing Computer Components Co., (H.K)Ltd. TeL(852)2341 9276 Fax:(852)27

1.2. 2sd1711.pdf Size:93K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1711 DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·High reliability. ·Built-in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1711 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining

4.1. 2sd1719.pdf Size:94K _panasonic

2SD1711
2SD1711
Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer Unit: mm 8.50.2 3.40.3 ratio 6.00.2 1.00.1 Features High forward current transfer ratio hFE which has satisfactory lin- 0 to 0.4 earity R = 0.5 0.80.1 R = 0.5 2.540.3 High emitter-base voltage (Collector open) VEBO 1.00.1 1.40.1 0.40.1 N type package enabling direct soldering of the radiating fin to the 5.080.5 (8.5) printed circuit board, etc. of small electronic equipment. (6.0) 1.3 1 2 3 Absolute Maximum Ratings TC = 25C Parameter Symbol Rating Unit (6.5) Collector-base voltage (Emitter open) VCBO 100 V 1: Base Collector-emitter voltage (Base open) VCEO 60 V 2: Collector 3: Emitter Emitter-base voltage (Collector open) VEBO 15 V N-G1 Package Collector current IC 6 A Note) Self-supported type package is also prepared. Peak collector current ICP 12 A Base current IB 3 A Collector power dissipation PC

4.2. 2sd1718.pdf Size:39K _no

2SD1711
2SD1711

4.3. 2sd1710.pdf Size:59K _wingshing

2SD1711
2SD1711
Silicon Diffused Power Transistor 2SD1710 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers TO-3PML QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base) VCEO - 600 V Collector current (DC) IC - 5 A Collector current peak value ICM - 10 A Total power dissipation Tmb 25 Ptot - 50 W Collector-emitter saturation voltage IC = 4.0A; IB = 1.0A VCEsat - 5.0 V Collector saturation current f = 16KHz - - A Icsat Diode forward voltage IF = 4.5A 1.6 2.0 V VF Fall time ICsat = 4.5A; f = 16KHz 0.5 1.0 s tf LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V - 1500 V VCESM Collector-emitter voltage (open base) - 600 V VCEO Collector current (DC) - 5 A IC Collector current peak value - 10 A

4.4. 2sd1717.pdf Size:82K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1717 DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1162 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current-peak 20 A 3.5 PC Collector power dissipation W TC=25? 120 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1717 CHARACTERISTICS Tj=25? unless otherwise specified

4.5. 2sd1710.pdf Size:88K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1710 DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·High reliability. APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A PC Collector power dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1710 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 800 V

4.6. 2sd1712.pdf Size:89K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1712 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SB1157 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICP Collector current-peak 8 A TC=25? 60 PC Collector power dissipation W Ta=25? 3 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1712 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter satur

4.7. 2sd1716.pdf Size:264K _inchange_semiconductor

2SD1711
2SD1711
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1716 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1161 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse 20 A Collector Power Dissipation 120 @ TC=25? PC W Collector Power Dissipation 3 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1716 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNI

4.8. 2sd1713.pdf Size:264K _inchange_semiconductor

2SD1711
2SD1711
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1713 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1158 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICP Collector Current-Pulse 10 A Collector Power Dissipation 70 @ TC=25? PC W Collector Power Dissipation 3 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1713 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

4.9. 2sd1715.pdf Size:163K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1715 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SB1160 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 9 A ICP Collector current-peak 15 A TC=25? 100 PC Collector power dissipation W 3 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1715 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation

4.10. 2sd1714.pdf Size:264K _inchange_semiconductor

2SD1711
2SD1711
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1714 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1159 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse 12 A Collector Power Dissipation 80 @ TC=25? PC W Collector Power Dissipation 3 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1714 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

4.11. 2sd1718.pdf Size:82K _inchange_semiconductor

2SD1711
2SD1711
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1718 DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1163 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 180 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 25 A 3.5 PC Collector power dissipation W TC=25? 150 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1718 CHARACTERISTICS Tj=25? unless otherwise specified

4.12. 2sd1710f.pdf Size:388K _blue-rocket-elect

2SD1711
2SD1711
2SD1710F(BR3DD1710F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage,high speed switching. 用途 / Applications 开关调整,高压开关,快速 DC-DC 转换。 Switching regulator applications, High voltage switching applications, High speed DC-DC converter applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base PIN 2:Collector PIN 3:Emitter 放大及印章代码 / hFE Classifications & Marking 见印章说明。See Marking Instructions . http://www.fsbrec.com 1 / 6 2SD1710F(BR3DD1710F) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 900 V Collector to Emitter Voltage VCEO 500 V Emitter to Base Voltage VEBO 7.0

4.13. 2sd1710a.pdf Size:414K _blue-rocket-elect

2SD1711
2SD1711
2SD1710A(BR3DD1710AR) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage,high speed switching. 用途 / Applications 用于彩电行偏转电路。 Use in horizontal deflection circuites of color TV. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base PIN 2:Collector PIN 3:Emitter 放大及印章代码 / hFE Classifications & Marking 见印章说明。See Marking Instructions. http://www.fsbrec.com 1 / 6 2SD1710A(BR3DD1710AR) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 900 V Collector to Emitter Voltage VCEO 500 V Emitter to Base Voltage VEBO 9.0 V Collector Current - Continuous IC 8.0 A Peak Collector Current ICM 12 A Collect

Другие транзисторы... 2SD1705 , 2SD1706 , 2SD1707 , 2SD1708 , 2SD1709 , 2SD170A , 2SD171 , 2SD1710 , 2N2907 , 2SD171-1 , 2SD1712 , 2SD171-2 , 2SD1713 , 2SD1714 , 2SD1715 , 2SD1716 , 2SD1717 .

 

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