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BC558 - описание производителя. Основные параметры. Даташиты. Справочник транзисторов.

Наименование производителя: BC558

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.5

Макcимально допустимое напряжение коллектор-база (Ucb): 30

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25

Макcимально допустимое напряжение эмиттер-база (Ueb): 5

Макcимальный постоянный ток коллектора (Ic): 0.1

Предельная температура PN-перехода (Tj), град: 150

Граничная частота коэффициента передачи тока (ft): 75

Ёмкость коллекторного перехода (Cc), пФ:

Статический коэффициент передачи тока (hfe): 75

Корпус транзистора: TO92

Аналоги (замена) для BC558

BC558 PDF:

1.1. bc556abk_bc557abk_bc558abk_bc559abk_bc556bbk_bc557bbk_bc558bbk_bc559bbk_bc556cbk_bc557cbk_bc558cbk_bc559cbk.pdf Size:80K _update

BC558
BC558

BC556xBK ... BC559xBK BC556xBK ... BC559xBK General Purpose Si-Epitaxial PlanarTransistors PNP PNP Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2009-12-07 ±0.1 Power dissipation – Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgehäuse (10D3) Weight approx. – Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Gehäusematerial

1.2. bc556_bc557_bc558_2.pdf Size:220K _motorola

BC558
BC558

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 65 45 30 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 80 50 30 Vdc EmitterBase Voltage VEBO

1.3. bc556_bc557_bc558.pdf Size:159K _motorola

BC558
BC558

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 65 45 30 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 80 50 30 Vdc EmitterBase Voltage VEBO

1.4. bc556_bc557_bc558_bc559_bc560.pdf Size:43K _fairchild_semi

BC558
BC558

BC556/557/558/559/560 Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Col

1.5. bc556b_bc557a-b-c_bc558b.pdf Size:81K _onsemi

BC558
BC558

BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 -65 EMITTER BC557 -45 BC558 -30 Collector - Base Voltage VCBO Vdc BC556 -80 BC557 -50 BC558 -30 TO-92 Emitter - Base Voltage VEBO -5.0 Vdc CASE 29

1.6. sbc558.pdf Size:94K _auk

BC558
BC558

SBC558 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-30V • Complementary pair with SBC548 Ordering Information Type NO. Marking Package Code SBC558 SBC558 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1

1.7. bc556_bc557_bc558.pdf Size:353K _cdil

BC558
BC558

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS Collector Emitter

1.8. bc556_bc557_bc558.pdf Size:274K _kec

BC558
BC558

SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES For Complementary With NPN Type BC546/547/548. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 BC556 -80 K 0.55 MAX

1.9. bc556_bc557_bc558.pdf Size:2241K _wietron

BC558
BC558

BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b Lead(Pb)-Free 2 BASE 1 2 3 1 EMITTER TO-92 Maximum Ratings ? ( T =25 C unless otherwise noted) A Rating Symbol BC556 BC557 BC558 Unit V -65 -45 Collector-Emitter Voltage ECO -30 V -30 V Collector-Base Voltage CBO -80 -50 V V EBO Emitter-Base Voltage -5 -5 -5 V l 100 Collector Current Co

Другие транзисторы... BC556VI , BC557 , BC557A , BC557AP , BC557B , BC557BP , BC557C , BC557VI , 2N4401 , BC558A , BC558AP , BC558B , BC558BP , BC558C , BC558CP , BC558VI , BC559 .

 


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