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BC850BR
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BC850BR
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Список
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTB989
KTC1001 .. KTN2222AE
KTN2222AS .. MCH4009
MCH4013 .. MJ11012
MJ11013 .. MJD47T4
MJD47TF .. MJE6044
MJE6045 .. MMBC1321Q4
MMBC1321Q5 .. MMBT6520L
MMBT6521L .. MP14B
MP14I .. MP5137
MP5138 .. MPS3397
MPS3398 .. MPSH54
MPSH55 .. MRF9511LT1
MRF957T1 .. NA12HG
NA12HH .. NB014EK
NB014EL .. NB212YH
NB212YI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A16
RCA1A17 .. RN16J1
RN1701 .. RN2901AFS
RN2901FE .. S1770
S1784 .. SDT9303
SDT9304 .. SJ5436
SJ5437 .. SRA2219EF
SRA2219M .. STC5554
STC5555 .. SZD31CNPN
SZD31CPNP .. TA2511
TA2512 .. TIP145
TIP145F .. TIS45
TIS47 .. TN4122
TN4123 .. TP930A
TP930R .. UN1110S
UN1111 .. UN921BJ
UN921CJ .. ZT404P
ZT41 .. ZTX4403K
ZTX4403L .. ZXTP558L
ZXTP717MA .. ZXTPS720MC
 
Биполярные транзисторы. Типовые характеристики. Справочник. Даташиты. Описания.
 

BC850BR - описание производителя. Основные характеристики и параметры. Даташиты. Справочник транзисторов.

Наименование производителя: BC850BR

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.31

Макcимально допустимое напряжение коллектор-база (Ucb): 50

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45

Макcимально допустимое напряжение эмиттер-база (Ueb): 5

Макcимальный постоянный ток коллектора (Ic): 0.1

Предельная температура PN-перехода (Tj), град: 150

Граничная частота коэффициента передачи тока (ft): 300

Ёмкость коллекторного перехода (Cc), пФ: 6

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: SOT23

Аналоги (замена) для BC850BR

BC850BR PDF doc:

5.1. bc846awt_bc847awt_bc848awt_bc849awt_bc850awt.pdf Size:207K _motorola

BC850BR
BC850BR
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846AWT1/D General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR CWT1 These transistors are designed for general purpose amplifier 3 BC848AWT1,BWT1, applications. They are housed in the SOT323/SC70 which is designed for low power surface mount applications. CWT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit 3 CollectorEmitter Voltage VCEO 65 45 30 V CollectorBase Voltage VCBO 80 50 30 V 1 2 EmitterBase Voltage VEBO 6.0 6.0 5.0 V CASE 41902, STYLE 3 Collector Current Continuous IC 100 100 100 mAdc SOT323/SC70 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (1) PD 150 mW TA = 25C Thermal Resistance, Junction to Ambient RqJA 833 C/W Total Device Dissipation PD 2.4 mW/C Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E

5.2. bc846alt_bc847alt_bc848alt_bc849alt_bc850alt.pdf Size:220K _motorola

BC850BR
BC850BR
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846ALT1/D BC846ALT1,BLT1 General Purpose Transistors BC847ALT1, NPN Silicon COLLECTOR BLT1,CLT1 thru 3 BC850ALT1,BLT1, 1 CLT1 BASE BC846, BC847 and BC848 are Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS BC847 BC848 BC850 BC849 Rating Symbol BC846 Unit 3 CollectorEmitter Voltage VCEO 65 45 30 V 1 CollectorBase Voltage VCBO 80 50 30 V 2 EmitterBase Voltage VEBO 6.0 6.0 5.0 V Collector Current Continuous IC 100 100 100 mAdc CASE 31808, STYLE 6 SOT23 (TO236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (1) PD TA = 25C 225 mW Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Total Device Dissipation PD Alumina Substrate, (2) TA = 25C 300 mW Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient RqJA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKIN

5.3. bc849w_bc850w.pdf Size:122K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION 3 NPN transistor in a SOT323 plastic package. handbook, halfpage PNP complements: BC859W and BC860W. 3 MARKING 1 TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849BW 2B? BC850BW 2F? Top view MAM062 BC849CW 2C? BC850CW 2G? Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UN

5.4. bc849w_bc850w_3.pdf Size:54K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION 3 handbook, halfpage NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. 3 1 MARKING TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849BW 2B? BC850BW 2F? Top view MAM062 BC849CW 2C? BC850CW 2G? Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MA

5.5. bc849_bc850_5.pdf Size:51K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors 1999 Apr 08 Product specification Supersedes data of 1998 Aug 06 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. handbook, halfpage 3 PNP complements: BC859 and BC860. 3 1 MARKING TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849B 2B? BC850B 2F? Top view MAM255 BC849C 2C? BC850C 2G? Note 1. ? = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC849 -

5.6. bc849_bc850.pdf Size:133K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 08 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. handbook, halfpage PNP complements: BC859 and BC860. 3 3 MARKING 1 TYPE MARKING TYPE MARKING NUMBER CODE(1) NUMBER CODE(1) 2 1 2 BC849B 2B* BC850B 2F* Top view MAM255 BC849C 2C* BC850C 2G* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BC849B - plastic surface mounted package; 3 leads SOT23 BC849C BC850B BC850C 2004 Jan 16 2 NXP Semic

5.7. bc846_bc847_bc848_bc849_bc850-series.pdf Size:136K _fairchild_semi

BC850BR
BC850BR
April 2011 BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 2 Complement to BC856 ... BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC846 80 V : BC847/850 50 V : BC848/849 30 V VCEO Collector-Emitter Voltage : BC846 65 V : BC847/850 45 V : BC848/849 30 V VEBO Emitter-Base Voltage : BC846/847 6 V : BC848/849/850 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 to 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta = 25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut

5.8. bc846_bc847_bc848_bc849_bc850.pdf Size:58K _samsung

BC850BR
BC850BR
NPN EPITAXIAL BC846/847/848/849/850 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC849, BC850 Complement to BC856 ... BC860 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO :BC846 80 V :BC847/850 50 V :BC848/849 30 V Collector Emitter Voltage VCEO :BC846 65 V :BC847/850 45 V :BC848/849 30 V Emitter-Base Voltage VEBO :BC846/847 6 V :BC848/849/850 5 V Collector Current (DC) IC 100 mA Collector Dissipation PC 310 mW Junction Temperature TJ 150 1. Base 2. Emitter 3. Collector Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit ICBO VCB=30V, IE=0 nA Collector Cut-off Current 15 hFE VCE=5V, IC=2mA 110 DC Current Gain 800 VCE (sat) IC=10mA, IB=0.5mA Collector Emitter Saturation Voltage 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sa

5.9. bc846_bc847_bc848_bc849_bc850.pdf Size:273K _siemens

BC850BR
BC850BR
NPN Silicon AF Transistors BC 846 ... BC 850 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 846 A 1As Q62702-C1772 B E C SOT-23 BC 846 B 1Bs Q62702-C1746 BC 847 A 1Es Q62702-C1884 BC 847 B 1Fs Q62702-C1687 BC 847 C 1Gs Q62702-C1715 BC 848 A 1Js Q62702-C1741 BC 848 B 1Ks Q62702-C1704 BC 848 C 1Ls Q62702-C1506 BC 849 B 2Bs Q62702-C1727 BC 849 C 2Cs Q62702-C1713 BC 850 B 2Fs Q62702-C1885 BC 850 C 2Gs Q62702-C1712 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 846 ... BC 850 Maximum Ratings Parameter Symbol Values Unit BC 846 BC 847 BC 848 BC 850 BC 849 Collector-emitter voltage VCE0 65 45 30 V Collector-base voltage VCB0 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitte

5.10. bc846w_bc847w_bc848w_bc849w_bc850w.pdf Size:272K _siemens

BC850BR
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NPN Silicon AF Transistor BC 846 W ... BC 850 W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type Marking Ordering code Pin Configuration Package (tape and reel) 1 2 3 B E C BC 846 AW 1 As Q62702-C2319 SOT 323 BC 846 BW 1 Bs Q62702-C2279 SOT 323 BC 847 AW 1 Es Q62702-C2304 SOT 323 BC 847 BW 1 Fs Q62702-C2305 SOT 323 BC 847 CW 1 Gs Q62702-C2306 SOT 323 BC 848 AW 1 Js Q62702-C2307 SOT 323 BC 848 BW 1 Ks Q62702-C2308 SOT 323 BC 848 CW 1 Ls Q62702-C2309 SOT 323 BC 849 BW 2 Bs Q62702-C2310 SOT 323 BC 849 CW 2 Cs Q62702-C2311 SOT 323 BC 850 BW 2 Fs Q62702-C2312 SOT 323 BC 850 CW 2 Gs Q62702-C2313 SOT 323 Semiconductor Group 1 04.96 BC 846W ... BC 850W Maximum Ratings BC846W BC 847 W Description Symbol Unit BC 849 W BC 848 W BC 840 W Collector-emitter voltage VCEO 65 45 30 V Collect

5.11. bc846_bc847_bc848_bc849_bc850.pdf Size:34K _diodes

BC850BR
BC850BR
BC846 BC847 SOT23 NPN SILICON PLANAR BC848 BC849 GENERAL PURPOSE TRANSISTORS BC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 E C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 8 8 8 8 8 IT DITI II I V V V V T II i V T V I i V I V I T V I V I T V I V i V T V I i V I I V I T I i V I V i 8 V I V V V T V V I V V II i i V I I i i i i i I V V BC846 BC847 BC848 BC849 BC850 ELECTRICAL CHARACTERISTICS (Continued) T 8 8 8 8 8 8 IT DITI i VI i I V V T i T I V V i I V V T 8 8 8 T I V V T I V V i I V V T T I V V T I V V V i I V V T 8 8 8 8 T I V V T i i T T I V V II T V V i i T V V i i i i T V V I ? ?

5.12. bc846series_bc847series_bc848series_bc849series_bc850series.pdf Size:182K _infineon

BC850BR
BC850BR
BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 2007-04-20 1 BC846...-BC850... Type Marking Pin Configuration Package BC846A 1As 1=B 2=E 3=C - - - SOT23 BC846B 1Bs 1=B 2=E 3=C - - - SOT23 BC846BW 1Bs 1=B 2=E 3=C - - - SOT323 BC847A 1Es 1=B 2=E 3=C - - - SOT23 BC847B 1Fs 1=B 2=E 3=C - - - SOT23 BC847BF 1Fs 1=B 2=E 3=C - - - TSFP-3 BC847BL3 1F 1=B 2=E 3=C - - - TSLP-3-1 BC847BT 1F 1=B 2=E 3=C - - - SC75 BC847BW 1Fs 1=B 2=E 3=C - - - SOT323 BC847C 1Gs 1=B 2=E 3=C - - - SOT23 BC847CW 1Gs 1=B 2=E 3=C - - - SOT323 BC848A 1Js 1=B 2=E 3=C - - - SOT23 BC848AW 1Js 1=B 2=E 3=C - - - SOT323 BC848B 1Ks 1=B 2=E 3=C - - - SOT23 BC848BF 1Ks 1

5.13. bc846_bc847_bc848_bc849_bc850.pdf Size:131K _onsemi

BC850BR
BC850BR
BC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 V COLLECTOR 3 ESD Rating - Machine Model: >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 3 BC846 65 BC847, BC850 45 BC848, BC849 30 1 2 Collector-Base Voltage VCBO Vdc BC846 80 SOT-23 BC847, BC850 50 CASE 318 BC848, BC849 30 STYLE 6 Emitter-Base Voltage VEBO Vdc BC846 6.0 MARKING DIAGRAM BC847, BC850 6.0 BC848, BC849 5.0 Collector Current - Continuous IC 100 mAdc XX M G Stresses exceeding Maximum Ratings may damage the device. Maximum G Ratings are stress ratings only. Functional operation above the Recommended 1 Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. XX = Device C

5.14. bc849_bc850.pdf Size:31K _kec

BC850BR
BC850BR
SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L FEATURES DIM MILLIMETERS For Complementary With PNP Type BC859/860. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 BC849 30 L 0.55 P P VCBO Collector-Base Voltage V M 0.20 MIN BC850 50 N 1.00+0.20/-0.10 P 7 BC849 30 VCEO Collector-Emitter Voltage V M BC850 45 VEBO Emitter-Base Voltage 5 V 1. EMITTER IC Collector Current 100 mA 2. BASE 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter BC849 30 - - V(BR)CEO IC=10mA, IB=0 V B

5.15. bc846_bc847_bc848_bc849_bc850.pdf Size:204K _wietron

BC850BR
BC850BR
BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 XX = Device 1 1 Code (See 2 BASE Table Below) SOT-23 *Moisture Sensitivity Level: 1 1 2 *ESD Rating - Human Body Model:>4000V 2 EMITTER -Machine Model:>400V ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V 65 BC846 CEO Vdc BC847, BC850 45 BC848, BC849 30 Collector-Base Voltage BC846 Vdc VCBO 80 BC847, BC850 50 BC848, BC849 30 Emitter-Base VOltage VEBO Vdc BC846 6.0 BC847, BC850 6.0 BC848, BC849 5.0 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board PD mW (Note 1.)TA=25 C 225 Derate above 25 C 1.8 mW/ C R qJA C/W Thermal Resistance, Junction to Ambient (Note 1.) 556 Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C 300 mW PD Derate above 25 C 2.4 mW/ C

5.16. bc846_bc847_bc848_bc850-xlt1.pdf Size:351K _willas

BC850BR
BC850BR
BC8 6A/BLT1 FM120-M BC8 7A/B/CLT1 WILLAS THRU BC8 8A/B/CLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon optimize board space. 0.146(3.7) • Low power loss, high efficien • Moisture Sensitivity Level: 1cy. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage dro • ESD Rating – Human Body Model: >4000 Vp. • High surge capability. ESD Rating – Machine Model: >400 V • Guardring for overvoltage protection. 0.071(1.8) • We declare that the material of product compliance with RoHS requirements. • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-f

Другие транзисторы... BC850 , BC850A , BC850ALT1 , BC850AR , BC850AW , BC850AWT1 , BC850B , BC850BLT1 , BEL187 , BC850BW , BC850BWT1 , BC850C , BC850CLT1 , BC850CR , BC850CW , BC850CWT1 , BC856 .

 

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