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BC850BR
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Список
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU526A/6
BU526A/7 .. BUL742C
BUL74A .. BUV47
BUV47A .. BUX83/9
BUX84 .. C945
C945LT1 .. CENW45
CF103 .. CJD47
CJD50 .. CMPTA63
CMPTA64 .. CS9018
CS9018D .. CSC1047
CSC1047B .. CSD1638
CSD1733 .. D11C1051
D11C1053 .. D39J6
D39J7 .. D45C4
D45C5 .. DMB2227A
DMJT9435 .. DTA123JUB
DTA123Y .. DTC143ZE
DTC143ZEA .. DZTA42
DZTA92 .. ECG361
ECG362 .. ESM138
ESM139 .. FC106
FC107 .. FJV4108R
FJV4109R .. FMMT5131
FMMT5132 .. FT4024
FT4025 .. GC181A
GC189 .. GES4926
GES4927 .. GI3638A
GI3641 .. GT3110A-2
GT311A .. HA7633
HA7723 .. HN2A26FS
HN2C01FE .. IDA1146
IDA1263 .. JE5401A
JE5401B .. KGS1002
KGS1003 .. KRA733F
KRA733U .. KRC668U
KRC669E .. KSA709-G
KSA709-O .. KSC2690A
KSC2690A-O .. KSD261-O
KSD261-R .. KSR2112
KSR2113 .. KT315N
KT315N-1 .. KT6111V
KT6112A .. KT8130A
KT8130B .. KT855V
KT856A .. KTA1807L
KTA1834D .. KTC9013
KTC9013S .. MA4103
MA4104 .. MH8211
MH8212 .. MJB44H11
MJB45H11 .. MJE4342
MJE4343 .. MM4209
MM4209A .. MMBT4965
MMBT5087L .. MMUN2215
MMUN2215L .. MP4052
MP4053 .. MPQ5858
MPQ5910 .. MPS929
MPS929A .. MRF455
MRF458 .. NA01F
NA01FG .. NB011HJ
NB011HK .. NB211EG
NB211EH .. NESG2021M16
NESG2030M04 .. NPS3903R
NPS3904 .. NSS60200LT1G
NSS60201LT1G .. OC480
OC480K .. PBSS4021PT
PBSS4032ND .. PEMD18
PEMD19 .. PN4403
PN4888 .. Q-00269A
Q-00369C .. RN1317
RN1318 .. RN2411
RN2412 .. RT657M
RT679M .. SD409
SD410 .. SGS911
SGS912 .. SRA2203S
SRA2203SF .. STB13007DT4
STB205L .. SUT465N
SUT466N .. TA1763
TA1763A .. TI814
TI815 .. TIPL757
TIPL757A .. TN3444
TN3467 .. TP4889
TP4890 .. UMH13N
UMH15N .. UN6218
UN6219 .. ZT1702
ZT1708 .. ZTX3701L
ZTX3701M .. ZXTN649F
ZXTNS618MC .. ZXTPS720MC
 
Биполярные транзисторы. Типовые характеристики. Справочник. Даташиты. Описания.
 

BC850BR - описание производителя. Основные характеристики и параметры. Даташиты. Справочник транзисторов.

Наименование производителя: BC850BR

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.31

Макcимально допустимое напряжение коллектор-база (Ucb): 50

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45

Макcимально допустимое напряжение эмиттер-база (Ueb): 5

Макcимальный постоянный ток коллектора (Ic): 0.1

Предельная температура PN-перехода (Tj), град: 150

Граничная частота коэффициента передачи тока (ft): 300

Ёмкость коллекторного перехода (Cc), пФ: 6

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: SOT23

Аналоги (замена) для BC850BR

BC850BR PDF doc:

5.1. bc846alt_bc847alt_bc848alt_bc849alt_bc850alt.pdf Size:220K _motorola

BC850BR
BC850BR
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846ALT1/D BC846ALT1,BLT1 General Purpose Transistors BC847ALT1, NPN Silicon COLLECTOR BLT1,CLT1 thru 3 BC850ALT1,BLT1, 1 CLT1 BASE BC846, BC847 and BC848 are Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS BC847 BC848 BC850 BC849 Rating Symbol BC846 Unit 3 CollectorEmitter Voltage VCEO 65 45 30 V 1 CollectorBase Voltage VCBO 80 50 30 V 2 EmitterBase Voltage VEBO 6.0 6.0 5.0 V Collector Current Continuous IC 100 100 100 mAdc CASE 31808, STYLE 6 SOT23 (TO236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (1) PD TA = 25C 225 mW Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Total Device Dissipation PD Alumina Substrate, (2) TA = 25C 300 mW Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient RqJA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKIN

5.2. bc846awt_bc847awt_bc848awt_bc849awt_bc850awt.pdf Size:207K _motorola

BC850BR
BC850BR
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846AWT1/D General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR CWT1 These transistors are designed for general purpose amplifier 3 BC848AWT1,BWT1, applications. They are housed in the SOT323/SC70 which is designed for low power surface mount applications. CWT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit 3 CollectorEmitter Voltage VCEO 65 45 30 V CollectorBase Voltage VCBO 80 50 30 V 1 2 EmitterBase Voltage VEBO 6.0 6.0 5.0 V CASE 41902, STYLE 3 Collector Current Continuous IC 100 100 100 mAdc SOT323/SC70 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (1) PD 150 mW TA = 25C Thermal Resistance, Junction to Ambient RqJA 833 C/W Total Device Dissipation PD 2.4 mW/C Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E

5.3. bc849w_bc850w.pdf Size:122K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION 3 NPN transistor in a SOT323 plastic package. handbook, halfpage PNP complements: BC859W and BC860W. 3 MARKING 1 TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849BW 2B? BC850BW 2F? Top view MAM062 BC849CW 2C? BC850CW 2G? Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UN

5.4. bc849_bc850_5.pdf Size:51K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors 1999 Apr 08 Product specification Supersedes data of 1998 Aug 06 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. handbook, halfpage 3 PNP complements: BC859 and BC860. 3 1 MARKING TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849B 2B? BC850B 2F? Top view MAM255 BC849C 2C? BC850C 2G? Note 1. ? = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC849 -

5.5. bc849w_bc850w_3.pdf Size:54K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION 3 handbook, halfpage NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. 3 1 MARKING TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849BW 2B? BC850BW 2F? Top view MAM062 BC849CW 2C? BC850CW 2G? Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MA

5.6. bc849_bc850.pdf Size:133K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 08 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. handbook, halfpage PNP complements: BC859 and BC860. 3 3 MARKING 1 TYPE MARKING TYPE MARKING NUMBER CODE(1) NUMBER CODE(1) 2 1 2 BC849B 2B* BC850B 2F* Top view MAM255 BC849C 2C* BC850C 2G* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BC849B - plastic surface mounted package; 3 leads SOT23 BC849C BC850B BC850C 2004 Jan 16 2 NXP Semic

5.7. bc846_bc847_bc848_bc849_bc850-series.pdf Size:136K _fairchild_semi

BC850BR
BC850BR
April 2011 BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 2 Complement to BC856 ... BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC846 80 V : BC847/850 50 V : BC848/849 30 V VCEO Collector-Emitter Voltage : BC846 65 V : BC847/850 45 V : BC848/849 30 V VEBO Emitter-Base Voltage : BC846/847 6 V : BC848/849/850 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 to 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta = 25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut

5.8. bc846_bc847_bc848_bc849_bc850.pdf Size:58K _samsung

BC850BR
BC850BR
NPN EPITAXIAL BC846/847/848/849/850 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC849, BC850 Complement to BC856 ... BC860 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO :BC846 80 V :BC847/850 50 V :BC848/849 30 V Collector Emitter Voltage VCEO :BC846 65 V :BC847/850 45 V :BC848/849 30 V Emitter-Base Voltage VEBO :BC846/847 6 V :BC848/849/850 5 V Collector Current (DC) IC 100 mA Collector Dissipation PC 310 mW Junction Temperature TJ 150 1. Base 2. Emitter 3. Collector Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit ICBO VCB=30V, IE=0 nA Collector Cut-off Current 15 hFE VCE=5V, IC=2mA 110 DC Current Gain 800 VCE (sat) IC=10mA, IB=0.5mA Collector Emitter Saturation Voltage 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sa

5.9. bc846w_bc847w_bc848w_bc849w_bc850w.pdf Size:272K _siemens

BC850BR
BC850BR
NPN Silicon AF Transistor BC 846 W ... BC 850 W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type Marking Ordering code Pin Configuration Package (tape and reel) 1 2 3 B E C BC 846 AW 1 As Q62702-C2319 SOT 323 BC 846 BW 1 Bs Q62702-C2279 SOT 323 BC 847 AW 1 Es Q62702-C2304 SOT 323 BC 847 BW 1 Fs Q62702-C2305 SOT 323 BC 847 CW 1 Gs Q62702-C2306 SOT 323 BC 848 AW 1 Js Q62702-C2307 SOT 323 BC 848 BW 1 Ks Q62702-C2308 SOT 323 BC 848 CW 1 Ls Q62702-C2309 SOT 323 BC 849 BW 2 Bs Q62702-C2310 SOT 323 BC 849 CW 2 Cs Q62702-C2311 SOT 323 BC 850 BW 2 Fs Q62702-C2312 SOT 323 BC 850 CW 2 Gs Q62702-C2313 SOT 323 Semiconductor Group 1 04.96 BC 846W ... BC 850W Maximum Ratings BC846W BC 847 W Description Symbol Unit BC 849 W BC 848 W BC 840 W Collector-emitter voltage VCEO 65 45 30 V Collect

5.10. bc846_bc847_bc848_bc849_bc850.pdf Size:273K _siemens

BC850BR
BC850BR
NPN Silicon AF Transistors BC 846 ... BC 850 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 846 A 1As Q62702-C1772 B E C SOT-23 BC 846 B 1Bs Q62702-C1746 BC 847 A 1Es Q62702-C1884 BC 847 B 1Fs Q62702-C1687 BC 847 C 1Gs Q62702-C1715 BC 848 A 1Js Q62702-C1741 BC 848 B 1Ks Q62702-C1704 BC 848 C 1Ls Q62702-C1506 BC 849 B 2Bs Q62702-C1727 BC 849 C 2Cs Q62702-C1713 BC 850 B 2Fs Q62702-C1885 BC 850 C 2Gs Q62702-C1712 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 846 ... BC 850 Maximum Ratings Parameter Symbol Values Unit BC 846 BC 847 BC 848 BC 850 BC 849 Collector-emitter voltage VCE0 65 45 30 V Collector-base voltage VCB0 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitte

5.11. bc846_bc847_bc848_bc849_bc850.pdf Size:34K _diodes

BC850BR
BC850BR
BC846 BC847 SOT23 NPN SILICON PLANAR BC848 BC849 GENERAL PURPOSE TRANSISTORS BC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 E C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 8 8 8 8 8 IT DITI II I V V V V T II i V T V I i V I V I T V I V I T V I V i V T V I i V I I V I T I i V I V i 8 V I V V V T V V I V V II i i V I I i i i i i I V V BC846 BC847 BC848 BC849 BC850 ELECTRICAL CHARACTERISTICS (Continued) T 8 8 8 8 8 8 IT DITI i VI i I V V T i T I V V i I V V T 8 8 8 T I V V T I V V i I V V T T I V V T I V V V i I V V T 8 8 8 8 T I V V T i i T T I V V II T V V i i T V V i i i i T V V I ? ?

5.12. bc846series_bc847series_bc848series_bc849series_bc850series.pdf Size:182K _infineon

BC850BR
BC850BR
BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 2007-04-20 1 BC846...-BC850... Type Marking Pin Configuration Package BC846A 1As 1=B 2=E 3=C - - - SOT23 BC846B 1Bs 1=B 2=E 3=C - - - SOT23 BC846BW 1Bs 1=B 2=E 3=C - - - SOT323 BC847A 1Es 1=B 2=E 3=C - - - SOT23 BC847B 1Fs 1=B 2=E 3=C - - - SOT23 BC847BF 1Fs 1=B 2=E 3=C - - - TSFP-3 BC847BL3 1F 1=B 2=E 3=C - - - TSLP-3-1 BC847BT 1F 1=B 2=E 3=C - - - SC75 BC847BW 1Fs 1=B 2=E 3=C - - - SOT323 BC847C 1Gs 1=B 2=E 3=C - - - SOT23 BC847CW 1Gs 1=B 2=E 3=C - - - SOT323 BC848A 1Js 1=B 2=E 3=C - - - SOT23 BC848AW 1Js 1=B 2=E 3=C - - - SOT323 BC848B 1Ks 1=B 2=E 3=C - - - SOT23 BC848BF 1Ks 1

5.13. bc846_bc847_bc848_bc849_bc850.pdf Size:131K _onsemi

BC850BR
BC850BR
BC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 V COLLECTOR 3 ESD Rating - Machine Model: >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 3 BC846 65 BC847, BC850 45 BC848, BC849 30 1 2 Collector-Base Voltage VCBO Vdc BC846 80 SOT-23 BC847, BC850 50 CASE 318 BC848, BC849 30 STYLE 6 Emitter-Base Voltage VEBO Vdc BC846 6.0 MARKING DIAGRAM BC847, BC850 6.0 BC848, BC849 5.0 Collector Current - Continuous IC 100 mAdc XX M G Stresses exceeding Maximum Ratings may damage the device. Maximum G Ratings are stress ratings only. Functional operation above the Recommended 1 Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. XX = Device C

5.14. bc849_bc850.pdf Size:31K _kec

BC850BR
BC850BR
SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L FEATURES DIM MILLIMETERS For Complementary With PNP Type BC859/860. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 BC849 30 L 0.55 P P VCBO Collector-Base Voltage V M 0.20 MIN BC850 50 N 1.00+0.20/-0.10 P 7 BC849 30 VCEO Collector-Emitter Voltage V M BC850 45 VEBO Emitter-Base Voltage 5 V 1. EMITTER IC Collector Current 100 mA 2. BASE 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter BC849 30 - - V(BR)CEO IC=10mA, IB=0 V B

5.15. bc846_bc847_bc848_bc849_bc850.pdf Size:204K _wietron

BC850BR
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BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 XX = Device 1 1 Code (See 2 BASE Table Below) SOT-23 *Moisture Sensitivity Level: 1 1 2 *ESD Rating - Human Body Model:>4000V 2 EMITTER -Machine Model:>400V ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V 65 BC846 CEO Vdc BC847, BC850 45 BC848, BC849 30 Collector-Base Voltage BC846 Vdc VCBO 80 BC847, BC850 50 BC848, BC849 30 Emitter-Base VOltage VEBO Vdc BC846 6.0 BC847, BC850 6.0 BC848, BC849 5.0 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board PD mW (Note 1.)TA=25 C 225 Derate above 25 C 1.8 mW/ C R qJA C/W Thermal Resistance, Junction to Ambient (Note 1.) 556 Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C 300 mW PD Derate above 25 C 2.4 mW/ C

5.16. bc846_bc847_bc848_bc850-xlt1.pdf Size:351K _willas

BC850BR
BC850BR
BC8 6A/BLT1 FM120-M BC8 7A/B/CLT1 WILLAS THRU BC8 8A/B/CLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon optimize board space. 0.146(3.7) • Low power loss, high efficien • Moisture Sensitivity Level: 1cy. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage dro • ESD Rating – Human Body Model: >4000 Vp. • High surge capability. ESD Rating – Machine Model: >400 V • Guardring for overvoltage protection. 0.071(1.8) • We declare that the material of product compliance with RoHS requirements. • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-f

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