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BC850BR
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  BC850BR
 
BC850BR
  BC850BR
 
 
Список
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
Биполярные транзисторы. Типовые характеристики. Справочник. Даташиты. Описания.
 

BC850BR - описание производителя. Основные параметры. Даташиты. Справочник транзисторов.

Наименование производителя: BC850BR

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.31

Макcимально допустимое напряжение коллектор-база (Ucb): 50

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45

Макcимально допустимое напряжение эмиттер-база (Ueb): 5

Макcимальный постоянный ток коллектора (Ic): 0.1

Предельная температура PN-перехода (Tj), град: 150

Граничная частота коэффициента передачи тока (ft): 300

Ёмкость коллекторного перехода (Cc), пФ: 6

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: SOT23

Аналоги (замена) для BC850BR

BC850BR PDF doc:

4.1. lbc850bwt1g.pdf Size:278K _lrc

BC850BR
BC850BR
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846AWT1G • Moisture Sensitivity Level: 1 Series • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector–Emitter Voltage VCEO Vdc SOT–323 /SC–70 LBC846 65 LBC847, LBC850 45 LBC848, LBC849 30 3 Collector–Base Voltage VCBO Vdc COLLECTOR LBC846 80 LBC847, LBC850 50 LBC848, LBC849 30 1 BASE Emitter–Base Voltage VEBO Vdc LBC846 6.0 2 LBC847, LBC850 6.0 EMITTER LBC848, LBC849 5.0 Collector Current – Continuous IC 100 mAdc MARKING DIAGRAM THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board PD 150 mW xx (Note 1.) TA = 25°C Derate above 25°C 2.4 mW/°C xx= Device Marking Thermal Resistance, RqJA 833 °C/W Junction to Ambient (Note 1.) (See Table Below) Junction an

4.2. lbc850blt1g.pdf Size:402K _lrc

BC850BR
BC850BR
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 LBC846ALT1G • ESD Rating – Human Body Model: >4000 V S-LBC846ALT1G ESD Rating – Machine Model: >400 V Series • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO Vdc SOT–23 LBC846 65 LBC847, LBC850 45 LBC848, LBC849 30 3 Collector–Base Voltage VCBO Vdc COLLECTOR LBC846 80 LBC847, LBC850 50 LBC848, LBC849 30 1 BASE Emitter–Base Voltage VEBO Vdc LBC846 6.0 2 LBC847, LBC850 6.0 EMITTER LBC848, LBC849 5.0 Collector Current – Continuous IC 100 mAdc MARKING DIAGRAM THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board PD 225 mW xx (Note 1.) TA =

5.1. bc846alt_bc847alt_bc848alt_bc849alt_bc850alt.pdf Size:220K _motorola

BC850BR
BC850BR
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846ALT1/D BC846ALT1,BLT1 General Purpose Transistors BC847ALT1, NPN Silicon COLLECTOR BLT1,CLT1 thru 3 BC850ALT1,BLT1, 1 CLT1 BASE BC846, BC847 and BC848 are Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS BC847 BC848 BC850 BC849 Rating Symbol BC846 Unit 3 CollectorEmitter Voltage VCEO 65 45 30 V 1 CollectorBase Voltage VCBO 80 50 30 V 2 EmitterBase Voltage VEBO 6.0 6.0 5.0 V Collector Current Continuous IC 100 100 100 mAdc CASE 31808, STYLE 6 SOT23 (TO236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (1) PD TA = 25C 225 mW Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Total Device Dissipation PD Alumina Substrate, (2) TA = 25C 300 mW Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient RqJA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKIN

5.2. bc846awt_bc847awt_bc848awt_bc849awt_bc850awt.pdf Size:207K _motorola

BC850BR
BC850BR
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846AWT1/D General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR CWT1 These transistors are designed for general purpose amplifier 3 BC848AWT1,BWT1, applications. They are housed in the SOT323/SC70 which is designed for low power surface mount applications. CWT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit 3 CollectorEmitter Voltage VCEO 65 45 30 V CollectorBase Voltage VCBO 80 50 30 V 1 2 EmitterBase Voltage VEBO 6.0 6.0 5.0 V CASE 41902, STYLE 3 Collector Current Continuous IC 100 100 100 mAdc SOT323/SC70 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (1) PD 150 mW TA = 25C Thermal Resistance, Junction to Ambient RqJA 833 C/W Total Device Dissipation PD 2.4 mW/C Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E

5.3. bc849w_bc850w.pdf Size:122K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION 3 NPN transistor in a SOT323 plastic package. handbook, halfpage PNP complements: BC859W and BC860W. 3 MARKING 1 TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849BW 2B? BC850BW 2F? Top view MAM062 BC849CW 2C? BC850CW 2G? Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UN

5.4. bc849w_bc850w_3.pdf Size:54K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION 3 handbook, halfpage NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. 3 1 MARKING TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849BW 2B? BC850BW 2F? Top view MAM062 BC849CW 2C? BC850CW 2G? Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MA

5.5. bc849_bc850_5.pdf Size:51K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors 1999 Apr 08 Product specification Supersedes data of 1998 Aug 06 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. handbook, halfpage 3 PNP complements: BC859 and BC860. 3 1 MARKING TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849B 2B? BC850B 2F? Top view MAM255 BC849C 2C? BC850C 2G? Note 1. ? = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC849 -

5.6. bc849_bc850.pdf Size:133K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 08 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. handbook, halfpage PNP complements: BC859 and BC860. 3 3 MARKING 1 TYPE MARKING TYPE MARKING NUMBER CODE(1) NUMBER CODE(1) 2 1 2 BC849B 2B* BC850B 2F* Top view MAM255 BC849C 2C* BC850C 2G* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BC849B - plastic surface mounted package; 3 leads SOT23 BC849C BC850B BC850C 2004 Jan 16 2 NXP Semic

5.7. bc846_bc847_bc848_bc849_bc850-series.pdf Size:136K _fairchild_semi

BC850BR
BC850BR
April 2011 BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 2 Complement to BC856 ... BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC846 80 V : BC847/850 50 V : BC848/849 30 V VCEO Collector-Emitter Voltage : BC846 65 V : BC847/850 45 V : BC848/849 30 V VEBO Emitter-Base Voltage : BC846/847 6 V : BC848/849/850 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 to 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta = 25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut

5.8. bc846_bc847_bc848_bc849_bc850.pdf Size:58K _samsung

BC850BR
BC850BR
NPN EPITAXIAL BC846/847/848/849/850 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC849, BC850 Complement to BC856 ... BC860 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO :BC846 80 V :BC847/850 50 V :BC848/849 30 V Collector Emitter Voltage VCEO :BC846 65 V :BC847/850 45 V :BC848/849 30 V Emitter-Base Voltage VEBO :BC846/847 6 V :BC848/849/850 5 V Collector Current (DC) IC 100 mA Collector Dissipation PC 310 mW Junction Temperature TJ 150 1. Base 2. Emitter 3. Collector Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit ICBO VCB=30V, IE=0 nA Collector Cut-off Current 15 hFE VCE=5V, IC=2mA 110 DC Current Gain 800 VCE (sat) IC=10mA, IB=0.5mA Collector Emitter Saturation Voltage 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sa

5.9. bc846w_bc847w_bc848w_bc849w_bc850w.pdf Size:272K _siemens

BC850BR
BC850BR
NPN Silicon AF Transistor BC 846 W ... BC 850 W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type Marking Ordering code Pin Configuration Package (tape and reel) 1 2 3 B E C BC 846 AW 1 As Q62702-C2319 SOT 323 BC 846 BW 1 Bs Q62702-C2279 SOT 323 BC 847 AW 1 Es Q62702-C2304 SOT 323 BC 847 BW 1 Fs Q62702-C2305 SOT 323 BC 847 CW 1 Gs Q62702-C2306 SOT 323 BC 848 AW 1 Js Q62702-C2307 SOT 323 BC 848 BW 1 Ks Q62702-C2308 SOT 323 BC 848 CW 1 Ls Q62702-C2309 SOT 323 BC 849 BW 2 Bs Q62702-C2310 SOT 323 BC 849 CW 2 Cs Q62702-C2311 SOT 323 BC 850 BW 2 Fs Q62702-C2312 SOT 323 BC 850 CW 2 Gs Q62702-C2313 SOT 323 Semiconductor Group 1 04.96 BC 846W ... BC 850W Maximum Ratings BC846W BC 847 W Description Symbol Unit BC 849 W BC 848 W BC 840 W Collector-emitter voltage VCEO 65 45 30 V Collect

5.10. bc846_bc847_bc848_bc849_bc850.pdf Size:273K _siemens

BC850BR
BC850BR
NPN Silicon AF Transistors BC 846 ... BC 850 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 846 A 1As Q62702-C1772 B E C SOT-23 BC 846 B 1Bs Q62702-C1746 BC 847 A 1Es Q62702-C1884 BC 847 B 1Fs Q62702-C1687 BC 847 C 1Gs Q62702-C1715 BC 848 A 1Js Q62702-C1741 BC 848 B 1Ks Q62702-C1704 BC 848 C 1Ls Q62702-C1506 BC 849 B 2Bs Q62702-C1727 BC 849 C 2Cs Q62702-C1713 BC 850 B 2Fs Q62702-C1885 BC 850 C 2Gs Q62702-C1712 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 846 ... BC 850 Maximum Ratings Parameter Symbol Values Unit BC 846 BC 847 BC 848 BC 850 BC 849 Collector-emitter voltage VCE0 65 45 30 V Collector-base voltage VCB0 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitte

5.11. bc846_bc847_bc848_bc849_bc850.pdf Size:34K _diodes

BC850BR
BC850BR
BC846 BC847 SOT23 NPN SILICON PLANAR BC848 BC849 GENERAL PURPOSE TRANSISTORS BC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 E C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 8 8 8 8 8 IT DITI II I V V V V T II i V T V I i V I V I T V I V I T V I V i V T V I i V I I V I T I i V I V i 8 V I V V V T V V I V V II i i V I I i i i i i I V V BC846 BC847 BC848 BC849 BC850 ELECTRICAL CHARACTERISTICS (Continued) T 8 8 8 8 8 8 IT DITI i VI i I V V T i T I V V i I V V T 8 8 8 T I V V T I V V i I V V T T I V V T I V V V i I V V T 8 8 8 8 T I V V T i i T T I V V II T V V i i T V V i i i i T V V I ? ?

5.12. bc846series_bc847series_bc848series_bc849series_bc850series.pdf Size:182K _infineon

BC850BR
BC850BR
BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 2007-04-20 1 BC846...-BC850... Type Marking Pin Configuration Package BC846A 1As 1=B 2=E 3=C - - - SOT23 BC846B 1Bs 1=B 2=E 3=C - - - SOT23 BC846BW 1Bs 1=B 2=E 3=C - - - SOT323 BC847A 1Es 1=B 2=E 3=C - - - SOT23 BC847B 1Fs 1=B 2=E 3=C - - - SOT23 BC847BF 1Fs 1=B 2=E 3=C - - - TSFP-3 BC847BL3 1F 1=B 2=E 3=C - - - TSLP-3-1 BC847BT 1F 1=B 2=E 3=C - - - SC75 BC847BW 1Fs 1=B 2=E 3=C - - - SOT323 BC847C 1Gs 1=B 2=E 3=C - - - SOT23 BC847CW 1Gs 1=B 2=E 3=C - - - SOT323 BC848A 1Js 1=B 2=E 3=C - - - SOT23 BC848AW 1Js 1=B 2=E 3=C - - - SOT323 BC848B 1Ks 1=B 2=E 3=C - - - SOT23 BC848BF 1Ks 1

5.13. bc846_bc847_bc848_bc849_bc850.pdf Size:131K _onsemi

BC850BR
BC850BR
BC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 V COLLECTOR 3 ESD Rating - Machine Model: >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 3 BC846 65 BC847, BC850 45 BC848, BC849 30 1 2 Collector-Base Voltage VCBO Vdc BC846 80 SOT-23 BC847, BC850 50 CASE 318 BC848, BC849 30 STYLE 6 Emitter-Base Voltage VEBO Vdc BC846 6.0 MARKING DIAGRAM BC847, BC850 6.0 BC848, BC849 5.0 Collector Current - Continuous IC 100 mAdc XX M G Stresses exceeding Maximum Ratings may damage the device. Maximum G Ratings are stress ratings only. Functional operation above the Recommended 1 Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. XX = Device C

5.14. bc849_bc850.pdf Size:31K _kec

BC850BR
BC850BR
SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L FEATURES DIM MILLIMETERS For Complementary With PNP Type BC859/860. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 BC849 30 L 0.55 P P VCBO Collector-Base Voltage V M 0.20 MIN BC850 50 N 1.00+0.20/-0.10 P 7 BC849 30 VCEO Collector-Emitter Voltage V M BC850 45 VEBO Emitter-Base Voltage 5 V 1. EMITTER IC Collector Current 100 mA 2. BASE 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter BC849 30 - - V(BR)CEO IC=10mA, IB=0 V B

5.15. bc846_bc847_bc848_bc849_bc850.pdf Size:204K _wietron

BC850BR
BC850BR
BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 XX = Device 1 1 Code (See 2 BASE Table Below) SOT-23 *Moisture Sensitivity Level: 1 1 2 *ESD Rating - Human Body Model:>4000V 2 EMITTER -Machine Model:>400V ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V 65 BC846 CEO Vdc BC847, BC850 45 BC848, BC849 30 Collector-Base Voltage BC846 Vdc VCBO 80 BC847, BC850 50 BC848, BC849 30 Emitter-Base VOltage VEBO Vdc BC846 6.0 BC847, BC850 6.0 BC848, BC849 5.0 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board PD mW (Note 1.)TA=25 C 225 Derate above 25 C 1.8 mW/ C R qJA C/W Thermal Resistance, Junction to Ambient (Note 1.) 556 Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C 300 mW PD Derate above 25 C 2.4 mW/ C

5.16. bc846_bc847_bc848_bc850-xlt1.pdf Size:351K _willas

BC850BR
BC850BR
BC8 6A/BLT1 FM120-M BC8 7A/B/CLT1 WILLAS THRU BC8 8A/B/CLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon optimize board space. 0.146(3.7) • Low power loss, high efficien • Moisture Sensitivity Level: 1cy. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage dro • ESD Rating – Human Body Model: >4000 Vp. • High surge capability. ESD Rating – Machine Model: >400 V • Guardring for overvoltage protection. 0.071(1.8) • We declare that the material of product compliance with RoHS requirements. • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-f

5.17. lbc850clt1g.pdf Size:403K _lrc

BC850BR
BC850BR
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 LBC846ALT1G S-LBC846ALT1G • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V Series • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO Vdc SOT–23 LBC846 65 LBC847, LBC850 45 LBC848, LBC849 30 3 Collector–Base Voltage VCBO Vdc COLLECTOR LBC846 80 LBC847, LBC850 50 LBC848, LBC849 30 1 BASE Emitter–Base Voltage VEBO Vdc LBC846 6.0 2 LBC847, LBC850 6.0 EMITTER LBC848, LBC849 5.0 Collector Current – Continuous IC 100 mAdc MARKING DIAGRAM THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board PD 225 mW xx (Note 1.) TA = 25

Другие транзисторы... BC850 , BC850A , BC850ALT1 , BC850AR , BC850AW , BC850AWT1 , BC850B , BC850BLT1 , BEL187 , BC850BW , BC850BWT1 , BC850C , BC850CLT1 , BC850CR , BC850CW , BC850CWT1 , BC856 .

 

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