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BC850BR - описание производителя. Основные параметры. Даташиты. Справочник транзисторов.

Наименование производителя: BC850BR

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.31

Макcимально допустимое напряжение коллектор-база (Ucb): 50

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45

Макcимально допустимое напряжение эмиттер-база (Ueb): 5

Макcимальный постоянный ток коллектора (Ic): 0.1

Предельная температура PN-перехода (Tj), град: 150

Граничная частота коэффициента передачи тока (ft): 300

Ёмкость коллекторного перехода (Cc), пФ: 6

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: SOT23

Аналоги (замена) для BC850BR

BC850BR PDF:

4.1. lbc850bwt1g.pdf Size:278K _lrc

BC850BR
BC850BR

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846AWT1G • Moisture Sensitivity Level: 1 Series • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector–Emitter Voltage VCEO Vdc SOT–323 /SC–70

4.2. lbc850blt1g.pdf Size:402K _lrc

BC850BR
BC850BR

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 LBC846ALT1G • ESD Rating – Human Body Model: >4000 V S-LBC846ALT1G ESD Rating – Machine Model: >400 V Series • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha

5.1. bc846alt_bc847alt_bc848alt_bc849alt_bc850alt.pdf Size:220K _motorola

BC850BR
BC850BR

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846ALT1/D BC846ALT1,BLT1 General Purpose Transistors BC847ALT1, NPN Silicon COLLECTOR BLT1,CLT1 thru 3 BC850ALT1,BLT1, 1 CLT1 BASE BC846, BC847 and BC848 are Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS BC847 BC848 BC850 BC849 Rating Symbol BC846 Unit 3 CollectorEmitter Voltage VCEO 65 45 30 V 1 Collec

5.2. bc846awt_bc847awt_bc848awt_bc849awt_bc850awt.pdf Size:207K _motorola

BC850BR
BC850BR

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846AWT1/D General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR CWT1 These transistors are designed for general purpose amplifier 3 BC848AWT1,BWT1, applications. They are housed in the SOT323/SC70 which is designed for low power surface mount applications. CWT1 1 BASE 2 EMITTER MAXIMUM RA

5.3. bc849w_bc850w.pdf Size:122K _philips

BC850BR
BC850BR

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collect

5.4. bc849w_bc850w_3.pdf Size:54K _philips

BC850BR
BC850BR

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3

5.5. bc849_bc850_5.pdf Size:51K _philips

BC850BR
BC850BR

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors 1999 Apr 08 Product specification Supersedes data of 1998 Aug 06 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 coll

5.6. bc849_bc850.pdf Size:133K _philips

BC850BR
BC850BR

DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 08 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switchi

5.7. bc846_bc847_bc848_bc849_bc850-series.pdf Size:136K _fairchild_semi

BC850BR
BC850BR

April 2011 BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 2 Complement to BC856 ... BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base V

5.8. bc846_bc847_bc848_bc849_bc850.pdf Size:58K _samsung

BC850BR
BC850BR

NPN EPITAXIAL BC846/847/848/849/850 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC849, BC850 Complement to BC856 ... BC860 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO :BC846 80 V :BC847/850 50 V :BC848/849 30 V Collector Emitter Vo

5.9. bc846w_bc847w_bc848w_bc849w_bc850w.pdf Size:272K _siemens

BC850BR
BC850BR

NPN Silicon AF Transistor BC 846 W ... BC 850 W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type Marking Ordering code Pin Configuration Package (tape and reel) 1 2 3 B E C BC 846 AW 1 As Q62702-C2319 SOT 3

5.10. bc846_bc847_bc848_bc849_bc850.pdf Size:273K _siemens

BC850BR
BC850BR

NPN Silicon AF Transistors BC 846 ... BC 850 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 846 A 1As Q62702-C1772 B E C SOT-23 BC 846 B 1Bs Q6270

5.11. bc846_bc847_bc848_bc849_bc850.pdf Size:34K _diodes

BC850BR
BC850BR

BC846 BC847 SOT23 NPN SILICON PLANAR BC848 BC849 GENERAL PURPOSE TRANSISTORS BC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 E C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHARACTER

5.12. bc846series_bc847series_bc848series_bc849series_bc850series.pdf Size:182K _infineon

BC850BR
BC850BR

BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 2007-04-20 1 BC8

5.13. bc846_bc847_bc848_bc849_bc850.pdf Size:131K _onsemi

BC850BR
BC850BR

BC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 V COLLECTOR 3 ESD Rating - Machine Model: >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 3 BC846

5.14. bc849_bc850.pdf Size:31K _kec

BC850BR
BC850BR

SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L FEATURES DIM MILLIMETERS For Complementary With PNP Type BC859/860. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05

5.15. bc846_bc847_bc848_bc849_bc850.pdf Size:204K _wietron

BC850BR
BC850BR

BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 XX = Device 1 1 Code (See 2 BASE Table Below) SOT-23 *Moisture Sensitivity Level: 1 1 2 *ESD Rating - Human Body Model:>4000V 2 EMITTER -Machine Model:>400V ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitte

5.16. bc846_bc847_bc848_bc850-xlt1.pdf Size:351K _willas

BC850BR
BC850BR

BC8 6A/BLT1 FM120-M BC8 7A/B/CLT1 WILLAS THRU BC8 8A/B/CLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mo

5.17. lbc850clt1g.pdf Size:403K _lrc

BC850BR
BC850BR

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 LBC846ALT1G S-LBC846ALT1G • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V Series • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

Другие транзисторы... BC850 , BC850A , BC850ALT1 , BC850AR , BC850AW , BC850AWT1 , BC850B , BC850BLT1 , BEL187 , BC850BW , BC850BWT1 , BC850C , BC850CLT1 , BC850CR , BC850CW , BC850CWT1 , BC856 .

 


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