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BC850BR
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Список
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Биполярные транзисторы. Типовые характеристики. Справочник. Даташиты. Описания.
 

BC850BR - описание производителя. Основные характеристики и параметры. Даташиты. Справочник транзисторов.

Наименование производителя: BC850BR

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.31

Макcимально допустимое напряжение коллектор-база (Ucb): 50

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45

Макcимально допустимое напряжение эмиттер-база (Ueb): 5

Макcимальный постоянный ток коллектора (Ic): 0.1

Предельная температура PN-перехода (Tj), град: 150

Граничная частота коэффициента передачи тока (ft): 300

Ёмкость коллекторного перехода (Cc), пФ: 6

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: SOT23

Аналоги (замена) для BC850BR

BC850BR PDF doc:

5.1. bc846alt_bc847alt_bc848alt_bc849alt_bc850alt.pdf Size:220K _motorola

BC850BR
BC850BR
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846ALT1/D BC846ALT1,BLT1 General Purpose Transistors BC847ALT1, NPN Silicon COLLECTOR BLT1,CLT1 thru 3 BC850ALT1,BLT1, 1 CLT1 BASE BC846, BC847 and BC848 are Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS BC847 BC848 BC850 BC849 Rating Symbol BC846 Unit 3 CollectorEmitter Voltage VCEO 65 45 30 V 1 CollectorBase Voltage VCBO 80 50 30 V 2 EmitterBase Voltage VEBO 6.0 6.0 5.0 V Collector Current Continuous IC 100 100 100 mAdc CASE 31808, STYLE 6 SOT23 (TO236AB) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (1) PD TA = 25C 225 mW Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Total Device Dissipation PD Alumina Substrate, (2) TA = 25C 300 mW Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient RqJA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKIN

5.2. bc846awt_bc847awt_bc848awt_bc849awt_bc850awt.pdf Size:207K _motorola

BC850BR
BC850BR
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846AWT1/D General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR CWT1 These transistors are designed for general purpose amplifier 3 BC848AWT1,BWT1, applications. They are housed in the SOT323/SC70 which is designed for low power surface mount applications. CWT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit 3 CollectorEmitter Voltage VCEO 65 45 30 V CollectorBase Voltage VCBO 80 50 30 V 1 2 EmitterBase Voltage VEBO 6.0 6.0 5.0 V CASE 41902, STYLE 3 Collector Current Continuous IC 100 100 100 mAdc SOT323/SC70 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (1) PD 150 mW TA = 25C Thermal Resistance, Junction to Ambient RqJA 833 C/W Total Device Dissipation PD 2.4 mW/C Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E

5.3. bc849w_bc850w.pdf Size:122K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 Jun 20 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION 3 NPN transistor in a SOT323 plastic package. handbook, halfpage PNP complements: BC859W and BC860W. 3 MARKING 1 TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849BW 2B? BC850BW 2F? Top view MAM062 BC849CW 2C? BC850CW 2G? Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UN

5.4. bc849_bc850_5.pdf Size:51K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors 1999 Apr 08 Product specification Supersedes data of 1998 Aug 06 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. handbook, halfpage 3 PNP complements: BC859 and BC860. 3 1 MARKING TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849B 2B? BC850B 2F? Top view MAM255 BC849C 2C? BC850C 2G? Note 1. ? = p : Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC849 -

5.5. bc849w_bc850w_3.pdf Size:54K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC849W; BC850W NPN general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC849W; BC850W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION 3 handbook, halfpage NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. 3 1 MARKING TYPE MARKING TYPE MARKING 2 NUMBER CODE(1) NUMBER CODE(1) 1 2 BC849BW 2B? BC850BW 2F? Top view MAM062 BC849CW 2C? BC850CW 2G? Note 1. ? = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ? = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MA

5.6. bc849_bc850.pdf Size:133K _philips

BC850BR
BC850BR
DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 08 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. handbook, halfpage PNP complements: BC859 and BC860. 3 3 MARKING 1 TYPE MARKING TYPE MARKING NUMBER CODE(1) NUMBER CODE(1) 2 1 2 BC849B 2B* BC850B 2F* Top view MAM255 BC849C 2C* BC850C 2G* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BC849B - plastic surface mounted package; 3 leads SOT23 BC849C BC850B BC850C 2004 Jan 16 2 NXP Semic

5.7. bc846_bc847_bc848_bc849_bc850-series.pdf Size:136K _fairchild_semi

BC850BR
BC850BR
April 2011 BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 2 Complement to BC856 ... BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC846 80 V : BC847/850 50 V : BC848/849 30 V VCEO Collector-Emitter Voltage : BC846 65 V : BC847/850 45 V : BC848/849 30 V VEBO Emitter-Base Voltage : BC846/847 6 V : BC848/849/850 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 to 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta = 25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut

5.8. bc846_bc847_bc848_bc849_bc850.pdf Size:58K _samsung

BC850BR
BC850BR
NPN EPITAXIAL BC846/847/848/849/850 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC849, BC850 Complement to BC856 ... BC860 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO :BC846 80 V :BC847/850 50 V :BC848/849 30 V Collector Emitter Voltage VCEO :BC846 65 V :BC847/850 45 V :BC848/849 30 V Emitter-Base Voltage VEBO :BC846/847 6 V :BC848/849/850 5 V Collector Current (DC) IC 100 mA Collector Dissipation PC 310 mW Junction Temperature TJ 150 1. Base 2. Emitter 3. Collector Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit ICBO VCB=30V, IE=0 nA Collector Cut-off Current 15 hFE VCE=5V, IC=2mA 110 DC Current Gain 800 VCE (sat) IC=10mA, IB=0.5mA Collector Emitter Saturation Voltage 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sa

5.9. bc846w_bc847w_bc848w_bc849w_bc850w.pdf Size:272K _siemens

BC850BR
BC850BR
NPN Silicon AF Transistor BC 846 W ... BC 850 W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type Marking Ordering code Pin Configuration Package (tape and reel) 1 2 3 B E C BC 846 AW 1 As Q62702-C2319 SOT 323 BC 846 BW 1 Bs Q62702-C2279 SOT 323 BC 847 AW 1 Es Q62702-C2304 SOT 323 BC 847 BW 1 Fs Q62702-C2305 SOT 323 BC 847 CW 1 Gs Q62702-C2306 SOT 323 BC 848 AW 1 Js Q62702-C2307 SOT 323 BC 848 BW 1 Ks Q62702-C2308 SOT 323 BC 848 CW 1 Ls Q62702-C2309 SOT 323 BC 849 BW 2 Bs Q62702-C2310 SOT 323 BC 849 CW 2 Cs Q62702-C2311 SOT 323 BC 850 BW 2 Fs Q62702-C2312 SOT 323 BC 850 CW 2 Gs Q62702-C2313 SOT 323 Semiconductor Group 1 04.96 BC 846W ... BC 850W Maximum Ratings BC846W BC 847 W Description Symbol Unit BC 849 W BC 848 W BC 840 W Collector-emitter voltage VCEO 65 45 30 V Collect

5.10. bc846_bc847_bc848_bc849_bc850.pdf Size:273K _siemens

BC850BR
BC850BR
NPN Silicon AF Transistors BC 846 ... BC 850 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 846 A 1As Q62702-C1772 B E C SOT-23 BC 846 B 1Bs Q62702-C1746 BC 847 A 1Es Q62702-C1884 BC 847 B 1Fs Q62702-C1687 BC 847 C 1Gs Q62702-C1715 BC 848 A 1Js Q62702-C1741 BC 848 B 1Ks Q62702-C1704 BC 848 C 1Ls Q62702-C1506 BC 849 B 2Bs Q62702-C1727 BC 849 C 2Cs Q62702-C1713 BC 850 B 2Fs Q62702-C1885 BC 850 C 2Gs Q62702-C1712 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 846 ... BC 850 Maximum Ratings Parameter Symbol Values Unit BC 846 BC 847 BC 848 BC 850 BC 849 Collector-emitter voltage VCE0 65 45 30 V Collector-base voltage VCB0 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitte

5.11. bc846_bc847_bc848_bc849_bc850.pdf Size:34K _diodes

BC850BR
BC850BR
BC846 BC847 SOT23 NPN SILICON PLANAR BC848 BC849 GENERAL PURPOSE TRANSISTORS BC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 E C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 8 8 8 8 8 IT DITI II I V V V V T II i V T V I i V I V I T V I V I T V I V i V T V I i V I I V I T I i V I V i 8 V I V V V T V V I V V II i i V I I i i i i i I V V BC846 BC847 BC848 BC849 BC850 ELECTRICAL CHARACTERISTICS (Continued) T 8 8 8 8 8 8 IT DITI i VI i I V V T i T I V V i I V V T 8 8 8 T I V V T I V V i I V V T T I V V T I V V V i I V V T 8 8 8 8 T I V V T i i T T I V V II T V V i i T V V i i i i T V V I ? ?

5.12. bc846series_bc847series_bc848series_bc849series_bc850series.pdf Size:182K _infineon

BC850BR
BC850BR
BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 2007-04-20 1 BC846...-BC850... Type Marking Pin Configuration Package BC846A 1As 1=B 2=E 3=C - - - SOT23 BC846B 1Bs 1=B 2=E 3=C - - - SOT23 BC846BW 1Bs 1=B 2=E 3=C - - - SOT323 BC847A 1Es 1=B 2=E 3=C - - - SOT23 BC847B 1Fs 1=B 2=E 3=C - - - SOT23 BC847BF 1Fs 1=B 2=E 3=C - - - TSFP-3 BC847BL3 1F 1=B 2=E 3=C - - - TSLP-3-1 BC847BT 1F 1=B 2=E 3=C - - - SC75 BC847BW 1Fs 1=B 2=E 3=C - - - SOT323 BC847C 1Gs 1=B 2=E 3=C - - - SOT23 BC847CW 1Gs 1=B 2=E 3=C - - - SOT323 BC848A 1Js 1=B 2=E 3=C - - - SOT23 BC848AW 1Js 1=B 2=E 3=C - - - SOT323 BC848B 1Ks 1=B 2=E 3=C - - - SOT23 BC848BF 1Ks 1

5.13. bc846_bc847_bc848_bc849_bc850.pdf Size:131K _onsemi

BC850BR
BC850BR
BC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 V COLLECTOR 3 ESD Rating - Machine Model: >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 3 BC846 65 BC847, BC850 45 BC848, BC849 30 1 2 Collector-Base Voltage VCBO Vdc BC846 80 SOT-23 BC847, BC850 50 CASE 318 BC848, BC849 30 STYLE 6 Emitter-Base Voltage VEBO Vdc BC846 6.0 MARKING DIAGRAM BC847, BC850 6.0 BC848, BC849 5.0 Collector Current - Continuous IC 100 mAdc XX M G Stresses exceeding Maximum Ratings may damage the device. Maximum G Ratings are stress ratings only. Functional operation above the Recommended 1 Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. XX = Device C

5.14. bc849_bc850.pdf Size:31K _kec

BC850BR
BC850BR
SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L FEATURES DIM MILLIMETERS For Complementary With PNP Type BC859/860. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 BC849 30 L 0.55 P P VCBO Collector-Base Voltage V M 0.20 MIN BC850 50 N 1.00+0.20/-0.10 P 7 BC849 30 VCEO Collector-Emitter Voltage V M BC850 45 VEBO Emitter-Base Voltage 5 V 1. EMITTER IC Collector Current 100 mA 2. BASE 3. COLLECTOR PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter BC849 30 - - V(BR)CEO IC=10mA, IB=0 V B

5.15. bc846_bc847_bc848_bc849_bc850.pdf Size:204K _wietron

BC850BR
BC850BR
BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 XX = Device 1 1 Code (See 2 BASE Table Below) SOT-23 *Moisture Sensitivity Level: 1 1 2 *ESD Rating - Human Body Model:>4000V 2 EMITTER -Machine Model:>400V ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emitter Voltage V 65 BC846 CEO Vdc BC847, BC850 45 BC848, BC849 30 Collector-Base Voltage BC846 Vdc VCBO 80 BC847, BC850 50 BC848, BC849 30 Emitter-Base VOltage VEBO Vdc BC846 6.0 BC847, BC850 6.0 BC848, BC849 5.0 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board PD mW (Note 1.)TA=25 C 225 Derate above 25 C 1.8 mW/ C R qJA C/W Thermal Resistance, Junction to Ambient (Note 1.) 556 Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C 300 mW PD Derate above 25 C 2.4 mW/ C

5.16. bc846_bc847_bc848_bc850-xlt1.pdf Size:351K _willas

BC850BR
BC850BR
BC8 6A/BLT1 FM120-M BC8 7A/B/CLT1 WILLAS THRU BC8 8A/B/CLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon optimize board space. 0.146(3.7) • Low power loss, high efficien • Moisture Sensitivity Level: 1cy. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage dro • ESD Rating – Human Body Model: >4000 Vp. • High surge capability. ESD Rating – Machine Model: >400 V • Guardring for overvoltage protection. 0.071(1.8) • We declare that the material of product compliance with RoHS requirements. • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-f

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