Биполярный транзистор STD888 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: STD888
Маркировка: D888
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 75
Корпус транзистора: DPAK
STD888 Datasheet (PDF)
std888.pdf
STD888HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOROrdering Code MarkingSTD888 D888 VERY LOW COLLECTOR TO EMITTERSATURATION VOLTAGE DC CURRENT GAIN, h > 100FE3 5 A CONTINUOUS COLLECTOR CURRENT1 SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix"T4")DPAKAPPLICATIONS TO-252 POWER MANAGEMENT IN PORTABLE(Suffix "T4")EQUIPMEN
std888.pdf
UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTCs advanced technology to provide customers high DC current gain and very low saturation voltage. The UTC STD888 is suitable f
std888.pdf
isc Silicon PNP Power Transistor STD888DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= -0.7V(Max)( I = -5A; I = -0.25A)CE(sat C BDC Current Gain -h = 150(Min)@ I = -0.5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsVoltage regulation in bias supply circuits applicationsS
std888t4.pdf
STD888T4Medium Current, High Performance, Low VoltagePNP TransistorGeneral features Very low Collector to Emitter saturation voltage D.C. Current gain, hFE >100 5A continuous collector current Surface mounting DPAK(TO-252) power package in tape & reel packing3 In compliance with the 2002/93/EC European 1DirectiveDPAK(TO-252)DescriptionThe device in
std882d.pdf
STD882DNPN Silicon TransistorDescription PIN Connection Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STB772D Switching Application Features Low collector saturation voltage VCE(sat)=0.4V(Max.) TO-252 Ordering Information Type NO. Marking Package Code STD882D STD882 TO-252 Absolute maximu
gstd882.pdf
GSTD882 NPN Epitaxial Planar Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments TO-252 Pin Description1 Base 2 Collector 3 Emitter Marking Information P/N Package Rank Part Marking GSTD882F TO-252 (R) / (O) / (Y) / (GR) D882 Ordering Information Part Number Package Qua
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2STL1525 | 2SC2655L-Y | 2SD468B | 2SD2159 | BFY99 | BC368 | 2N2219
History: 2STL1525 | 2SC2655L-Y | 2SD468B | 2SD2159 | BFY99 | BC368 | 2N2219
Список транзисторов
Обновления
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D