Биполярный транзистор 2SC5258 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5258
Маркировка: MHR_MHO
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 7 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1.5 V
Макcимальный постоянный ток коллектора (Ic): 0.04 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 9000 MHz
Ёмкость коллекторного перехода (Cc): 0.6 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: 2-2K1A
2SC5258 Datasheet (PDF)
2sc5254.pdf
2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1
2sc5255.pdf
2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1
2sc5250.pdf
Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective ManufacturerPrinted from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective ManufacturerPrinted from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective ManufacturerPrinted from www.fr
2sc5251.pdf
2SC5251Silicon NPN Triple Diffused PlanarPreliminaryApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.2 sec (typ) Isolated packageTO-3PFM (N)OutlineTO-3PFM (N)1. Base 2. Collector 3. Emitter1232SC5251Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Un
2sc5252.pdf
2SC5252Silicon NPN Triple Diffused PlanarADE-208-391A (Z)2nd. EditionApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf 0.15 sec(typ.) Isolated packageTO3PFMOutlineTO-3PFM1. Base2. Collector3. Emitter1232SC5252Absolute Maximum Ratings (Ta = 25C)Item Sym
2sc5254.pdf
SMD Type TransistorsNPN Transistors2SC5254SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=40mA Collector Emitter Voltage VCEO=7V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc5259.pdf
SMD Type TransistorsNPN Transistors2SC5259SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=15mA1 2 Collector Emitter Voltage VCEO=7V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc5250.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5250DESCRIPTIONSilicon NPN diffused planar transistorHigh speed switchingBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection outputSwitching regulator and general purposeAB
2sc5252.pdf
isc Silicon NPN Power Transistor 2SC5252DESCRIPTIONHigh speed switchingHigh breakdown voltageVCBO = 1500 VMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Vo
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