Справочник транзисторов. 2SA1606

 

Биполярный транзистор 2SA1606 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA1606
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 30 pf
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: TO220F

 Аналоги (замена) для 2SA1606

 

 

2SA1606 Datasheet (PDF)

 ..1. Size:104K  sanyo
2sa1606 2sc4159.pdf

2SA1606
2SA1606

Ordering number:EN2535PNP/NPN Epitaxial Planar Silicon Transistors2SA1606/2SC4159High-Voltage Switching, AF 100WDriver ApplicationsApplications Package Dimensions High-voltage switching, AF power amplifier, 100Wunit:mmoutput predrivers.2041[2SA1606/2SC4159]Features Micaless package facilitating mounting.E : EmitterC : CollectorB : Base( ) : 2SA1606SANYO :

 ..2. Size:213K  inchange semiconductor
2sa1606.pdf

2SA1606
2SA1606

isc Silicon PNP Power Transistor 2SA1606DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V (Min)(BR)CEOLarge Current CapacityComplement to Type 2SC4159Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, AF power amplifier,100W output predrivers.ABSOLUTE MAXIMUM RATINGS(Ta=2

 8.1. Size:83K  sanyo
2sa1604.pdf

2SA1606
2SA1606

 8.2. Size:149K  sanyo
2sa1607 2sc4168.pdf

2SA1606
2SA1606

Ordering number:EN2479APNP/NPN Epitaxial Planar Silicon Transistors2SA1607/2SC4168High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2018A Low saturation voltage.[2SA1607/2SC4168]C : CollectorB : BaseE : Emitter( ) : 2SA1607SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25C

 8.3. Size:306K  nec
2sa1608.pdf

2SA1606
2SA1606

 8.4. Size:156K  jmnic
2sa1601.pdf

2SA1606
2SA1606

JMnic Product SpecificationSilicon PNP Power Transistors 2SA1601 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emi

 8.5. Size:150K  jmnic
2sa1600.pdf

2SA1606
2SA1606

JMnic Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

 8.6. Size:298K  shindengen
2sa1601.pdf

2SA1606
2SA1606

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1601 Case : ITO-220Unit : mm(TP15T4)-15A PNPRATINGS

 8.7. Size:291K  shindengen
2sa1600.pdf

2SA1606
2SA1606

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1600 Case : ITO-220Unit : mm(TP12T4)-12A PNPRATINGS

 8.8. Size:1666K  kexin
2sa1608.pdf

2SA1606
2SA1606

SMD Type TransistorsPNP Transistors2SA1608 Features High fT : fT=400MHz Complementary to 2SC37391.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Diss

 8.9. Size:974K  kexin
2sa1607.pdf

2SA1606
2SA1606

SMD Type orSMD Type TransistICsPNP Transistors 2SA1607SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesFast switching speed.High gain-bandwidth product.1 2+0.1+0.050.95-0.1 0.1-0.01Low saturation voltage.+0.11.9-0.1 Complementary to 2SC41681.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base

 8.10. Size:210K  inchange semiconductor
2sa1601.pdf

2SA1606
2SA1606

isc Silicon PNP Power Transistor 2SA1601DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -7.5ACE(sat) CLarge Current Capability-I = -15ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is ide

 8.11. Size:148K  inchange semiconductor
2sa1600.pdf

2SA1606
2SA1606

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-bas

Другие транзисторы... 2SA1602 , 2SA1603 , 2SA1604 , 2SA1604R , 2SA1604S , 2SA1604T , 2SA1604U , 2SA1605 , 2SC1815 , 2SA1606D , 2SA1606E , 2SA1607 , 2SA1607-3 , 2SA1607-4 , 2SA1607-5 , 2SA1608 , 2SA1609 .

 

 
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